BU1006A5S-E345 [VISHAY]
Enhanced Power Bridge Rectifiers; 增强电源桥式整流器
| 型号： | BU1006A5S-E345 |
| 厂家： | 
VISHAY |
| 描述： | Enhanced Power Bridge Rectifiers |
| 文件： | 总6页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
BU1006A thru BU1010A
Vishay General Semiconductor
Enhanced Power Bridge Rectifiers
FEATURES
PowerBridgeTM
• UL recognition file number E309391
(QQQX2) UL 1557 (see *)
• Thin single in-line package
• Available for BU-5S lead forming option (part
number with “5S” suffix, e.g. BU1006A5S)
+
-
~
~
~
~
+
-
+
Case Style BU
• Superior thermal conductivity
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
~
~
-
* Tested to UL standard for safety electrically isolated semiconductor
devices. UL 1557 4th edition.
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for switching power supply, home
appliances and white-goods applications.
Dielectric tested to maximum case, storage and junction
temperature to 150 °C to withstand 1500 V.
Epoxy meets UL 94V-0 flammability rating.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: BU
IF(AV)
10 A
600 V, 800 V, 1000 V
90 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
VRRM
IFSM
IR
5 µA
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
V
F at IF = 5 A
TJ max.
0.94 V
150 °C
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
BU1006A
BU1008A
BU1010A
UNIT
Maximum repetitive peak reverse voltage
VRRM
600
800
1000
V
T
C = 90 °C (1)
TA = 25 °C (2)
10
3.0
Average rectified forward current (Fig. 1, 2)
IO
A
Non-repetitive peak forward surge current
8.3 ms single sine-wave, TJ = 25 °C
IFSM
90
A
Rating for fusing (t < 8.3 ms) TJ = 25 °C
I2t
33
A2s
°C
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
Notes:
(1) With 60 W air cooled heatsink
(2) Without heatsink, free air
Document Number: 84800
Revision: 11-Mar-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
BU1006A thru BU1010A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Maximum instantaneous forward
voltage per diode (1)
T
T
A = 25 °C
A = 125 °C
1.02
0.94
1.10
1.00
IF = 5.0 A
VF
V
TA = 25 °C
A = 125 °C
-
45
5.0
250
Maximum reverse current per diode
Typical junction capacitance per diode
rated VR
IR
µA
pF
T
4.0 V, 1 MHz
CJ
30
-
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
BU1006A
BU1008A
BU1010A
UNIT
(1)
RθJC
RθJA
3.0
20
Typical thermal resistance
°C/W
(2)
Notes:
(1) With 60 W air cooled heatsink
(2) Without heatsink, free air
ORDERING INFORMATION (Example)
PREFERRED P/N
BU1006A-E3/45
BU1006A-E3/51
BU1006A5S-E3/45
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
Tube
4.48
4.48
4.48
45
51
45
20
250
20
Paper tray
Tube
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
12
10
4
3
2
1
0
8
6
4
2
0
With Heatsink
Sine-Wave, R-Load
TC Measured at Device Bottom
TC
TC
Without Heatsink
Sine-Wave, R-Load
Free Air, TA
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
Case Temperature (°C)
Ambient Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
Figure 2. Forward Current Derating Curve
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 84800
Revision: 11-Mar-08
New Product
BU1006A thru BU1010A
Vishay General Semiconductor
24
20
16
12
8
1000
TJ = 150 °C
100
10
TJ = 125 °C
1
TJ = 25 °C
0.1
4
0
0.01
0
1
2
3
4
5
6
7
8
9
10 11
10
20
30
40
50
60
70
80
90 100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Average Rectified Forward Current
Figure 5. Typical Reverse Characteristics Per Diode
100
10
100
TJ = 150 °C
1
TJ = 125 °C
T
J = 25 °C
0.1
10
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 4. Typical Forward Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
Document Number: 84800
Revision: 11-Mar-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
New Product
BU1006A thru BU1010A
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Type BU
0.161 (4.10)
0.142 (3.60)
0.880 (22.3)
0.860 (21.8)
0.020R (Typ.)
View A
0.125 (3.2) x 45°
9°
0.310 (7.9)
0.290 (7.4)
Chamfer
Typ.
0.160 (4.1)
0.140 (3.5)
0.740 (18.8)
0.720 (18.3)
0.075
0.080 (2.03)
(1.9) R
0.085 (2.16)
0.060 (1.52)
0.065 (1.65)
+
~ ~
-
5°
Typ.
0.710 (18.0)
0.690 (17.5)
0.050 (1.27)
0.040 (1.02)
0.100 (2.54)
0.085 (2.16)
0.048 (1.23)
0.039 (1.00)
0.080 (2.03)
0.065 (1.65)
0.024 (0.62)
0.020 (0.52)
0.190 (4.83)
0.210 (5.33)
Polarity shown on front side of case, positive lead beveled corner
0.055 (1.385) Ref.
0.094 (2.39) x 45° Ref.
R 0.11
(2.78) Ref.
0.64 (16.28) Ref.
0.62 (15.78) Ref.
R 0.10
(2.60) Ref.
0.055 (1.385) Ref.
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 84800
Revision: 11-Mar-08
New Product
BU1006A thru BU1010A
Vishay General Semiconductor
FORMING SPECIFICATION: BU-5S in inches (millimeters)
0.161 (4.10)
0.142 (3.60)
0.880 (22.3)
0.860 (21.8)
9°
Typ.
0.020R (Typ.)
0.125 (3.2) x 45°
Chamfer
0.160 (4.1)
0.140 (3.5)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
0.075
(1.9)R
0.085 (2.16)
0.065 (1.65)
5°
Typ.
+
~ ~
-
0.080 (2.03)
0.060 (1.52)
0.100 (2.54)
0.085 (2.16)
0.219 (5.55)
Max.
0.315 (8.0)
0.276 (7.0)
0.050 (1.27)
0.040 (1.02)
0.213 (5.40)
0.173 (4.40)
0.417 (10.60)
0.370 (9.40)
0.134 (3.40)
0.087 (2.20)
0.319 (8.10)
0.272 (6.90)
0.319 (8.10)
0.272 (6.90)
0.024 (0.62)
0.020 (0.52)
0.080 (2.03)
0.065 (1.65)
APPLICATION NOTE
(1) Device UL approved for safety use dielectric strength of 1500 V.
(2) If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement.
(3) Heat sink shape recommendation:
(3)
Heat Sink
2.5 mm Min.
2.5 mm Min.
By Safety Requirements
Document Number: 84800
Revision: 11-Mar-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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