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BU1208-E3/72 [VISHAY]

Bridge Rectifier Diode, 1 Phase, 3.4A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE BU, 4 PIN;
BU1208-E3/72
型号： BU1208-E3/72
厂家： VISHAY    VISHAY
描述：

Bridge Rectifier Diode, 1 Phase, 3.4A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE BU, 4 PIN
文件： 总6页 (文件大小：106K)
中文：  中文翻译
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New Product  
BU1206 thru BU1210  
Vishay General Semiconductor  
High-Current Density Single-Phase Bridge Rectifiers  
FEATURES  
Case Style BU  
• UL recognition file number E309391  
(QQQX2) UL 1557 (see *)  
• Thin single in-line package  
• Superior thermal conductivity  
+
-
~
~
~
• Solder dip 260 °C, 40 seconds  
~
+
-
+
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
~
~
-
General purpose use in ac-to-dc bridge full wave  
rectification for switching power supply, home  
appliances and white-goods applications.  
* Tested to UL standard for safety electrically isolated semiconductor  
devices. UL 1557 4th edition.  
Dielectric tested to maximum case, storage and junction  
temperature to 150 °C to withstand 1500 V.  
Epoxy meets UL 94V-0 flammability rating.  
MECHANICAL DATA  
Case: BU  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, meets JESD 201 class  
1A whisker test  
PRIMARY CHARACTERISTICS  
IF(AV)  
12 A  
600 V, 800 V, 1000 V  
150 A  
VRRM  
Polarity: As marked on body  
IFSM  
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.  
Recommended Torque: 5.7 cm-kg (5 inches-lbs)  
IR  
5 µA  
V
F at IF = 6 A  
TJ max.  
0.88 V  
150 °C  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
BU1206  
BU1208  
BU1210  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
600  
800  
1000  
V
T
C = 85 °C (1)  
TA = 25 °C (2)  
12  
3.4  
Average rectified forward current (Fig. 1, 2)  
IO  
A
Non-repetitive peak forward surge current  
8.3 ms single sine-wave, TJ = 25 °C  
IFSM  
150  
A
Rating for fusing (t < 8.3 ms) TJ = 25 °C  
I2t  
93  
A2s  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Notes:  
(1) With 60 W air cooled heatsink  
(2) Without heatsink, free air  
Document Number: 84802  
Revision: 24-Aug-07  
www.vishay.com  
1
New Product  
BU1206 thru BU1210  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
MAX.  
UNIT  
Maximum instantaneous forward  
voltage per diode (1)  
T
A = 25 °C  
0.98  
0.88  
1.05  
0.95  
at IF = 6.0 A  
at rated VR  
VF  
V
TA = 125 °C  
TA = 25 °C  
A = 125 °C  
-
74  
5.0  
250  
Maximum reverse current per diode  
IR  
µA  
pF  
T
Typical junction capacitance per diode at 4.0 V, 1 MHz  
Note:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
CJ  
50  
-
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
BU1206  
BU1208  
BU1210  
UNIT  
(1)  
RθJC  
RθJA  
2.7  
20  
Typical thermal resistance  
°C/W  
(2)  
Notes:  
(1) With 60 W air cooled heatsink  
(2) Without heatsink, free air  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
BU1206-E3/45  
BU1206-E3/72  
UNIT WEIGHT (g)  
PREFERRED PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
Tube  
4.66  
4.66  
45  
72  
20  
200  
Paper box  
RATINGS AND CHARACTERISTICS CURVES  
(T = 25 °C unless otherwise noted)  
A
14  
12  
5
4
3
2
1
0
10  
With Heatsink  
Sine-Wave, R-Load  
TC Measured at Device Bottom  
8
TC  
TC  
6
4
2
0
Without Heatsink  
Sine-Wave, R-Load  
Free Air, TA  
0
20  
40  
60  
80  
100  
120  
140  
160  
0
25  
50  
75  
100  
125  
150  
Case Temperature (°C)  
Ambient Temperature (°C)  
Figure 1. Derating Curve Output Rectified Current  
Figure 2. Forward Current Derating Curve  
www.vishay.com  
2
Document Number: 84802  
Revision: 24-Aug-07  
New Product  
BU1206 thru BU1210  
Vishay General Semiconductor  
30  
25  
20  
15  
10  
5
1000  
TJ = 150 °C  
100  
10  
TJ = 125 °C  
1
T
J = 25 °C  
0.1  
0
0.01  
0
2
4
6
8
10  
12  
14  
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
Average Forward Current (A)  
Percent of Rated Peak Reverse Voltage (%)  
Figure 3. Average Rectified Forward Current  
Figure 5. Typical Reverse Characteristics Per Diode  
100  
100  
TJ = 150 °C  
TJ = 125 °C  
10  
1
TJ = 25 °C  
0.1  
10  
0.01  
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3  
0.1  
1
10  
100  
Instantaneous Forward Voltage (V)  
Reverse Voltage (V)  
Figure 4. Typical Forward Characteristics Per Diode  
Figure 6. Typical Junction Capacitance Per Diode  
Document Number: 84802  
Revision: 24-Aug-07  
www.vishay.com  
3
New Product  
BU1206 thru BU1210  
Vishay General Semiconductor  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
Case Type BU  
0.161 (4.10)  
0.142 (3.60)  
0.880 (22.3)  
0.860 (21.8)  
0.020R (TYP.)  
View A  
0.125 (3.2) x 45°  
9°  
0.310 (7.9)  
0.290 (7.4)  
CHAMFER  
TYP  
0.160 (4.1)  
0.140 (3.5)  
0.740 (18.8)  
0.720 (18.3)  
0.075  
0.080 (2.03)  
(1.9)R  
0.085 (2.16)  
0.060 (1.52)  
0.065 (1.65)  
+
~ ~  
-
5°  
TYP  
0.710 (18.0)  
0.690 (17.5)  
0.050 (1.27)  
0.040 (1.02)  
0.100 (2.54)  
0.085 (2.16)  
0.048 (1.23)  
0.039 (1.00)  
0.080 (2.03)  
0.065 (1.65)  
0.062 (1.57)  
0.052 (1.32)  
0.190 (4.83)  
0.210 (5.33)  
Polarity shown on front side of case, positive lead beveled corner  
0.055 (1.385) Ref.  
0.094 (2.39) x 45° Ref.  
R0.11  
(2.78) Ref.  
0.64 (16.28) Ref.  
0.62 (15.78) Ref.  
R0.10  
(2.60) Ref.  
0.055 (1.385) Ref.  
www.vishay.com  
4
Document Number: 84802  
Revision: 24-Aug-07  
New Product  
BU1206 thru BU1210  
Vishay General Semiconductor  
APPLICATION NOTE  
(1) Device UL approved for safety use dielectric strength of 1500 V.  
(2) If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement.  
(3) Heat sink shape recommendation:  
(3)  
Heat Sink  
2.5 mm Min.  
2.5 mm Min.  
By Safety Requirements  
Document Number: 84802  
Revision: 24-Aug-07  
www.vishay.com  
5
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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