BY203-20STAP [VISHAY]
Fast Avalanche Sinterglass Diode; 快速雪崩二极管Sinterglass型号: | BY203-20STAP |
厂家: | VISHAY |
描述: | Fast Avalanche Sinterglass Diode |
文件: | 总4页 (文件大小:128K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BY203-12S, BY203-16S, BY203-20S
www.vishay.com
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Fast rectification and switching avalanche sinterglass
diode for TV-line output circuits an switch mode power
949539
supply
MECHANICAL DATA
Case: SOD-57 sintered glass case
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
MINIMUM ORDER QUANTITY
BY203-20S
BY203-20STR
5000 per 10" tape and reel
5000 per ammopack
25 000
25 000
BY203-20S
BY203-20STAP
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
SOD-57
SOD-57
SOD-57
BY203-12S
BY203-16S
BY203-20S
V
R = 1200 V; IF(AV) = 250 mA
R = 1600 V; IF(AV) = 250 mA
R = 2000 V; IF(AV) = 250 mA
V
V
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
R = 100 μA
tp = 10 ms, half sine wave
(BR)R = 0.4 A
PART
SYMBOL
VALUE
1200
UNIT
BY203-12S
BY203-16S
BY203-20S
VR = VRRM
V
V
Reverse voltage = repetitive peak reverse
voltage
l
V
R = VRRM
R = VRRM
IFSM
1600
V
2000
V
Peak forward surge current
Average forward current
20
A
IF(AV)
ER
250
mA
mJ
°C
°C
Non repetitive reverse avalanche energy
Junction temperature range
Storage temperature range
I
10
Tj
- 55 to + 150
- 55 to + 175
Tstg
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Lead length l = 10 mm, TL = constant
Maximum lead length
SYMBOL
VALUE
45
UNIT
K/W
K/W
RthJA
Junction ambient
RthJA
100
Rev. 1.9, 12-Sep-12
Document Number: 86002
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BY203-12S, BY203-16S, BY203-20S
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
Forward voltage
IF = 200 mA, tp/T = 0.01, tp = 0.3ms
VF
IR
-
-
-
-
-
-
-
-
-
2.4
VR = 700 V
BY203-12S
BY203-16S
BY203-20S
BY203-12S
BY203-16S
BY203-20S
-
2
2
μA
μA
μA
V
Reverse current
VR = 1000 V
VR = 1200 V
IR
-
IR
-
2
V(BR)
V(BR)
V(BR)
trr
1200
1600
2000
-
-
Breakdown voltage
l
R = 100 μA, tp/T = 0.01, tp = 0.3 ms
IF = 0.5 A, IR = 1 A, iR = 0.25 A
-
V
-
V
Reverse recovery time
300
ns
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
240
200
160
120
80
0.30
0.25
0.20
0.15
0.10
0.05
0
RthJA = 45 K/W
I = 10 mm
RthJA = 100 K/W
PCB: d = 25 mm
VRRM
VR
BY203/12
VR = VRRM
half sinewave
40
BY203/16
BY203/20
0
0
400
800
1200
1600
0
30
60
90
120
150
949080 VR, VRRM - Rev./Rep. Peak Rev. Voltage (V)
Tamb - Ambient Temperature (°C)
16398
Fig. 1 - Junction Temperature vs.
Reverse/Repetitive Peak Reverse Voltage
Fig. 3 - Max. Average Forward Current vs.
Ambient Temperature
10
1000
100
10
VR = VRRM
1
Tj = 175 °C
0.1
0.01
Tj = 25 °C
0.001
1
0
1
2
3
4
5.0
25
50
Tj - Junction Temperature (°C)
Fig. 4 - Max. Reverse Current vs. Junction Temperature
75
100
125
150
16397
VF - Forward Voltage (V)
16399
Fig. 2 - Max. Forward Current vs. Forward Voltage
Rev. 1.9, 12-Sep-12
Document Number: 86002
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BY203-12S, BY203-16S, BY203-20S
www.vishay.com
Vishay Semiconductors
500
400
300
200
100
0
18
f = 1 MHz
VR = VRRM
16
14
12
10
8
PR-Limit
at 100 % VR
PR-Limit
at 80 % VR
6
4
2
0
0.1
25
50
75
100
125
150
1
10
100
16400
Tj - Junction Temperature (°C)
16401
VR - Reverse Voltage (V)
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
26 (1.024) min.
4 (0.157) max.
20543
Rev. 1.9, 12-Sep-12
Document Number: 86002
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
Document Number: 91000
1
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