BY397P/1 [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2;
| 型号： | BY397P/1 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 |
| 文件： | 总2页 (文件大小：19K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BY396P thru BY399P
Vishay Semiconductors
formerly General Semiconductor
Soft Recovery Fast-Switching
Plastic Rectifier
Reverse Voltage 100 to 800 V
Forward Current 3.0 A
DO-201AD
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• High surge current capability
1.0 (25.4)
MIN.
• Construction utilizes void-free molded plastic technique
• 3.0 Ampere operation at TA=50°C with no thermal
runaway
0.210 (5.3)
0.190 (4.8)
DIA.
• Fast switching for high efficiency
• High temperature soldering guaranteed:
250°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
0.375 (9.5)
0.285 (7.2)
Mechanical Data
Case: JEDEC DO-201AD, molded plastic body
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
0.052 (1.32)
1.0 (25.4)
MIN.
0.048 (1.22)
DIA.
Weight: 0.04 oz., 1.1 g
Packaging codes/options:
1/Bulk - 1.5K per container, 15K per box
4/1.4K per 13" reel, 5.6K per box
23/1K per Ammo. mag., 9K per box
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Symbols
VRRM
VRMS
BY396P BY397P BY398P
BY399P Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
100
70
200
140
200
400
280
400
800
560
800
V
V
V
Maximum DC blocking voltage
VDC
100
Maximum average forward rectified current
0.375” (9.5mm) lead lengths at TA=50°C
IF(AV)
3.0
A
Peak forward surge current
10ms single half sine-wave superimposed on
rated load at TA=50°C
IFSM
100
A
Maximum repetitive peak forward surge at f < 15 KHz
Typical thermal resistance (1)
IFRM
RΘJA
TJ
10
22
A
°C/W
°C
Operating junction temperature range
Storage temperature range
-50 to +125
-50 to +150
TSTG
°C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage at 3.0A
VF
1.25
V
Maximum DC reverse current
at rated DC blocking voltage
TA= 25°C
TA=100°C
10
500
IR
µA
Maximum reverse recovery time at
IF=10mA, IR=10mA, Irr=1.0mA
trr
500
ns
Maximum forward recovery time at 100mA, di/dt = 50A/µs
tfr
1.0
28
µs
Typical junction capacitance at 4.0V, 1MHz
CJ
pF
Notes:
(1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length with both leads to heat sink
Document Number 88542
06-Mar-02
www.vishay.com
1
BY396P thru BY399P
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Forward Current
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
Derating Curve
200
100
4.0
TA = 50°C
10ms Single Half Sine-Wave
At Rated Load
Resistive or
Inductive Load
3.0
2.0
1.0
0.375" (9.5mm) Lead Length
0
10
0
20
40
60
80
100
120
140
1
10
100
Ambient Temperature (°C)
Number of Cycles at 50 HZ
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 4 – Typical Reverse
Characteristics
10
100
10
1
TJ = 100°C
1
TJ = 25°C
Pulse Width = 300µs
1% Duty Cycle
TJ = 50°C
TJ = 25°C
0.1
0.1
0.01
0.01
2.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction Capacitance
100
T = 25°C
J
f = 1.0MHZ
Vsig = 50mVp-p
10
1
10
100
Reverse Voltage (V)
www.vishay.com
2
Document Number 88542
06-Mar-02
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