BYM36B-TR [VISHAY]
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| 型号： | BYM36B-TR |
| 厂家： | 
VISHAY |
| 描述： | 暂无描述 二极管 |
| 文件： | 总5页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYM36
Vishay Semiconductors
VISHAY
Fast Avalanche Sinterglass Diode
Features
• Glass passivated
• Hermetically sealed package
• Very low switching losses
• Low reverse current
949588
• High reverse voltage
Mechanical Data
Case: SOD-64 Sintered glass case
Terminals: Plated axial leads, solderable per
Applications
Switched mode power supplies
MIL-STD-750, Method 2026
High-frequency inverter circuits
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 858 mg
Parts Table
Part
Type differentiation
Package
BYM36A
V
V
V
V
V
= 200 V; I
= 400 V; I
= 600 V; I
= 800 V; I
= 3 A
= 3 A
= 3 A
= 2.9 A
SOD-64
SOD-64
SOD-64
SOD-64
SOD-64
R
R
R
R
R
FAV
FAV
FAV
FAV
BYM36B
BYM36C
BYM36D
BYM36E
= 1000 V; I
= 2.9 A
FAV
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
Parameter
amb
Test condition
Part
Symbol
Value
200
Unit
V
Reverse voltage = Repetitive
peak reverse voltage
see electrical characteristics
BYM36A
V
= V
R
RRM
BYM36B
BYM36C
BYM36D
BYM36E
V
V
V
V
= V
= V
= V
= V
400
600
800
1000
65
V
V
R
R
R
R
RRM
RRM
RRM
RRM
V
V
Peak forward surge current
Average forward current
t = 10 ms, half sinewave
I
A
p
FSM
BYM36A-BYM36C
BYM36D-BYM36E
I
3
A
FAV
FAV
I
2.9
20
A
Non repetitive reverse
avalanche energy
I
= 1 A, inductive load
E
mJ
(BR)R
R
Junction and storage
temperature range
T = T
- 55 to + 175
°C
j
stg
Document Number 86012
Rev. 1.6, 12-Aug-04
www.vishay.com
1
BYM36
Vishay Semiconductors
VISHAY
Maximum Thermal Resistance
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
25
Unit
K/W
Junction ambient
l = 10 mm, T = constant
R
R
L
thJA
thJA
on PC Board with spacing
\re\n25 mm
70
K/W
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
V
Forward voltage
I
I
= 3 A
BYM36A-
BYM36C
V
V
V
V
I
1.6
F
F
F
F
F
BYM36D-
BYM36E
1.78
1.22
1.28
V
V
V
= 3 A, T = 175 °C
BYM36A-
BYM36C
F
j
BYM36D-
BYM36E
Reverse current
V
V
I
= V
5
µA
µA
V
R
RRM
R
= V
, T = 150 °C
I
R
100
R
RRM
j
Reverse breakdown voltage
= 100 µA
BYM36A
BYM36B
BYM36C
BYM36D
BYM36E
V
V
V
V
V
300
500
700
900
1100
R
(BR)R
(BR)R
(BR)R
(BR)R
(BR)R
V
V
V
V
Reverse recovery time
I
= 0.5 A, I = 1 A, i = 0.25 A
BYM36A-
BYM36C
t
100
150
ns
F
R
R
rr
BYM36D-
BYM36E
t
ns
rr
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
600
500
4
BYM36A, BYM36B, BYM36C
R
= 25 K/W
thJA
3
1000V
400
300
200
R
= 25 K/W
thJA
800V
600V
2
R
=70 K/W
thJA
R
= 70 K/W
thJA
1
0
400V
200V
100
0
V
= V
RRM
Half Sinewave
200
200
0
40
80
120
160
0
40 80
120
160
T – Junction Temperature (°C )
j
T
amb
- Ambient Temperature ( °C )
95 9706
95 9705
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
Figure 2. Max. Average Forward Current vs. Ambient Temperature
www.vishay.com
Document Number 86012
Rev. 1.6, 12-Aug-04
2
BYM36
Vishay Semiconductors
VISHAY
4
3
100
10
1
BYM36D, BYM36E
T
j
=175°C
R
= 25 K/W
thJA
2
T = 25°C
j
R
= 70 K/W
thJA
0.1
0.01
1
0
V
=V
RRM
BYM36D, BYM36E
Half Sinewave
40 80
– Ambient Temperature (°C )
0.001
200
4
0
120
160
0
1
F
2
3
T
V
– Forward Voltage ( V )
95 9707
95 9709
amb
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 6. Max. Forward Current vs. Forward Voltage
1000
100
90
f =1 MHz
80
70
60
50
40
30
20
10
0
10
V
= V
160
R
RRM
1
0.1
0
40
80
120
200
0.1
1
10
V – Reverse Voltage ( V )
R
100
T - Junction T emperature (°C )
95 9704
16302
j
Figure 4. Max. Reverse Current vs. Junction Temperature
Figure 7. Diode Capacitance vs. Reverse Voltage
100
T = 175°C
j
10
1
T
j
= 25°C
0.1
0.01
BYM36A, BYM36B, BYM36C
0.001
4
0
1
2
3
V
– Forward Voltage ( V )
95 9708
F
Figure 5. Max. Forward Current vs. Forward Voltage
Document Number 86012
Rev. 1.6, 12-Aug-04
www.vishay.com
3
BYM36
Vishay Semiconductors
VISHAY
Package Dimensions in mm (Inches)
4.3 (0.168) max.
Sintered Glass Case
SOD-64
Cathode Identification
ISO Method E
1.35 (0.053) max.
26(1.014) min.
26 (1.014) min.
4.0 (0.156) max.
94 9587
www.vishay.com
Document Number 86012
Rev. 1.6, 12-Aug-04
4
BYM36
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 86012
Rev. 1.6, 12-Aug-04
www.vishay.com
5
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