BYT108-400 [VISHAY]
Ultra Fast Recovery Silicon Power Rectifier; 超快恢复颖电整流器
| 型号： | BYT108-400 |
| 厂家： | 
VISHAY |
| 描述： | Ultra Fast Recovery Silicon Power Rectifier |
| 文件： | 总5页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYT108/200/400
Vishay Telefunken
Ultra Fast Recovery Silicon Power Rectifier
Features
Multiple diffusion
Epitaxial – planar
Ultra fast forward recovery time
Ultra fast reverse recovery time
Low reverse current
Very good reverse current stability at high tem-
perature
14282
Low thermal resistance
Applications
Fast rectifiers in S.M.P.S
Freewheeling diodes and snubber diodes in motor
control circuits
Absolute Maximum Ratings
T = 25 C
j
Parameter
Reverse voltage
=Repetitive peak reverse voltage
Test Conditions
Type
Symbol
Value
200
400
Unit
V
V
BYT108/200 V =V
BYT108/400 V =V
R
RRM
RRM
R
Peak forward surge current
t =10ms,
p
I
100
A
FSM
half sinewave
Repetitive peak forward current
Average forward current
Junction and storage
temperature range
I
I
40
8
A
A
C
FRM
FAV
T =T
j
–55...+150
stg
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction case
Junction ambient
Test Conditions
Symbol
Value
2.4
85
Unit
K/W
K/W
R
thJC
R
thJA
Document Number 86019
Rev. 2, 24-Jun-98
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1 (5)
BYT108/200/400
Vishay Telefunken
Electrical Characteristics
T = 25 C
j
Parameter
Forward voltage
Test Conditions
I =8A
Type
Symbol Min Typ Max Unit
V
V
1.3
1.2
5
V
V
A
mA
ns
V
F
F
F
I =8A, T =100 C
F
j
Reverse current
V =V
V =V
R
I
I
R
RRM
RRM
R
, T =150 C
1
j
R
Forward recovery time
Turn on transient peak
voltage
t
fr
350
I =8A, di /dt 50A/ s
F
F
V
FP
4
Reverse recovery
characteristics
I
5
100
A
ns
ns
ns
A
I =8A, di /dt –50A/ s,
RM
F
F
V =200V
Batt
t
IRM
Reverse recovery time
Reverse recovery current
Reverse recovery time
I =0.5A, I =1A, i =0.25A BYT108/200
t
t
35
50
F
R
R
rr
BYT108/400
rr
I
1.9
58
I =1A, di /dt –50A/ s,
RM
F
F
V =200V
Batt
t
rr
ns
I =1A, di /dt –50A/ s,
F
F
V
Batt
=200V,i =0.25xI
R RM
Characteristics (Tj = 25 C unless otherwise specified)
1000
100
10
10
8
6
R
thJC
=2.4K/W
R
thJA
=5K/W
1
4
R
thJA
=10K/W
V =V
R
RRM
0.1
0.01
2
0
R
thJA
=85K/W
200
200
0
40
80
120
160
0
40
80
120
160
94 9502
T – Junction Temperature ( °C )
j
94 9501
T
amb
– Ambient Temperature ( °C )
Figure 1. Typ. Reverse Current vs. Junction Temperature
Figure 2. Max. Average Forward Current vs. Ambient
Temperature
www.vishay.de • FaxBack +1-408-970-5600
Document Number 86019
Rev. 2, 24-Jun-98
2 (5)
BYT108/200/400
Vishay Telefunken
100
10
250
200
150
1
100
50
0
I =8A
T =100°C
C
F
0.1
0.01
3.0
350
0
0.6
1.2
1.8
2.4
0
50 100 150 200 250 300
94 9507
V
– Forward Voltage ( V )
94 9505 –dI /dt – Forward Current Rate of Change ( A/ s )
F
F
Figure 3. Typ. Forward Current vs. Forward Voltage
Figure 6. Reverse Recovery Time vs.
Forward Current Rate of Change
160
120
800
600
400
I =8A
T =100°C
C
F
80
40
0
I =8A
F
T =100°C
C
200
0
350
350
0
50 100 150 200 250 300
0
50 100 150 200 250 300
94 9506 –dI /dt – Forward Current Rate of Change ( A/ s )
94 9503 –dI /dt – Forward Current Rate of Change ( A/ s )
F
F
Figure 7. Reverse Recovery Charge vs.
Forward Current Rate of Change
Figure 4. Reverse Recovery Time for I
vs.
RM
Forward Current Rate of Change
20
15
10
5
I =8A
T =100°C
C
F
0
350
0
50 100 150 200 250 300
94 9504
–dI /dt – Forward Current Rate of Change ( A/ s )
F
Figure 5. Reverse Recovery Current vs.
Forward Current Rate of Change
Document Number 86019
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
3 (5)
BYT108/200/400
Vishay Telefunken
Dimensions in mm
14276
www.vishay.de • FaxBack +1-408-970-5600
Document Number 86019
Rev. 2, 24-Jun-98
4 (5)
BYT108/200/400
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 86019
Rev. 2, 24-Jun-98
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