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BYT42MTAP

更新时间：2024-09-18 13:04:32
品牌：VISHAY
描述：Rectifier Diode, 1 Phase, 1 Element, 1.25A, 1000V V(RRM), Silicon, HERMETIC SEALED, GLASS, DOT30B, 2 PIN

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BYT42MTAP 概述

Rectifier Diode, 1 Phase, 1 Element, 1.25A, 1000V V(RRM), Silicon, HERMETIC SEALED, GLASS, DOT30B, 2 PIN 整流二极管

BYT42MTAP 规格参数

生命周期：Obsolete包装说明：O-LALF-W2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.65应用：FAST SOFT RECOVERY
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：O-LALF-W2最大非重复峰值正向电流：30 A
元件数量：1相数：1
端子数量：2最大输出电流：1.25 A
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM认证状态：Not Qualified
最大重复峰值反向电压：1000 V最大反向恢复时间：0.2 µs
表面贴装：NO端子形式：WIRE
端子位置：AXIALBase Number Matches：1

BYT42MTAP 数据手册

通过下载BYT42MTAP数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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BYT42  
Vishay Telefunken  
Fast Soft Recovery Rectifier  
Features  
Miniature axial leaded  
Glass passivated  
Hermetically sealed glass envelope  
Low reverse current  
High reverse voltage  
Applications  
95 10526  
TV and monitor  
SMPS  
Electronic ballast  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Reverse voltage  
=Repetitive peak reverse voltage  
Test Conditions  
Type  
Symbol  
Value  
50  
Unit  
V
V
V
V
V
V
V
A
BYT42A  
BYT42B  
BYT42D  
BYT42G  
BYT42J  
BYT42K  
BYT42M  
V
R
=V  
RRM  
100  
200  
400  
600  
800  
1000  
30  
Peak forward surge current  
Average forward current  
t =8.3 ms, half sinewave  
Lead length l = 10 mm,  
I
p
FSM  
I
1.25  
A
FAV  
T = 25 C  
L
Junction and storage  
temperature range  
T =T  
–55...+175  
C
j
stg  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Test Conditions  
Symbol  
Value  
Unit  
Junction ambient  
Lead length l = 10 mm, T = constant  
on PC board with spacing 25mm  
R
thJA  
R
thJA  
60  
110  
K/W  
K/W  
L
Document Number 86025  
Rev. 3, 24-Jun-98  
www.vishay.de • FaxBack +1-408-970-5600  
1 (4)  
BYT42  
Vishay Telefunken  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Reverse current  
Test Conditions  
I =1A  
Type  
Symbol Min  
Typ Max Unit  
V
F
1.4  
5
V
A
F
V =V  
I
I
R
RRM  
R
V =V  
, T =150 C  
150  
A
R
RRM  
j
R
Reverse breakdown voltage  
I =100 A  
R
BYT42A  
BYT42B  
BYT42D  
BYT42G  
BYT42J  
BYT42K  
BYT42M  
V
(BR)R  
V
(BR)R  
V
(BR)R  
V
(BR)R  
V
(BR)R  
V
(BR)R  
V
(BR)R  
50  
100  
200  
400  
600  
800  
1000  
V
V
V
V
V
V
V
Reverse recovery time  
I =0.5A, I =1A,  
i =0.25A  
R
BYT42A  
–BYT42J  
BYT42K  
t
150  
200  
ns  
F
R
rr  
t
rr  
ns  
–BYT42M  
Characteristics (Tj = 25 C unless otherwise specified)  
120  
100  
80  
60  
40  
20  
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
V =V  
R
R RM  
f
1kHz  
110K/W  
R
thJA  
PC Board  
l
l
BYT42A  
BYT42M  
T =constant  
L
30  
0
20 40 60 80 100 120 140 160 180  
– Ambient Temperature ( °C )  
0
5
10  
15  
20  
25  
96 12139  
T
amb  
96 12151  
l – Lead Length ( mm )  
Figure 1. Max. Thermal Resistance vs. Lead Length  
Figure 2. Max. Average Forward Current vs.  
Ambient Temperature  
www.vishay.de • FaxBack +1-408-970-5600  
Document Number 86025  
Rev. 3, 24-Jun-98  
2 (4)  
BYT42  
Vishay Telefunken  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
100.000  
10.000  
1.000  
V =V  
R
R RM  
f
1kHz  
R
60K/W  
thJA  
T =175°C  
j
l=10mm  
T =25°C  
j
BYT42A  
0.100  
BYT42M  
0.010  
0.001  
0
20 40 60 80 100 120 140 160 180  
– Ambient Temperature ( °C )  
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5  
– Forward Voltage ( V )  
96 12140  
T
amb  
96 12138  
V
F
Figure 5. Max. Forward Current vs. Forward Voltage  
Figure 3. Max. Average Forward Current vs.  
Ambient Temperature  
1000  
V
= V  
RRM  
R
100  
10  
1
25  
50  
75  
100  
125  
150  
175  
96 12141  
T – Junction Temperature ( °C )  
j
Figure 4. Max. Reverse Current vs.  
Junction Temperature  
Dimensions in mm  
95 10524  
Standard Glass Case  
DOT 30 B  
Weight max. 0.5g  
3 max.  
technical drawings  
according to DIN  
specifications  
Cathode Identification  
0.82 max.  
26 min.  
26 min.  
4.2 max.  
Document Number 86025  
Rev. 3, 24-Jun-98  
www.vishay.de • FaxBack +1-408-970-5600  
3 (4)  
BYT42  
Vishay Telefunken  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems  
with respect to their impact on the health and safety of our employees and the public, as well as their impact on  
the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of  
ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer application  
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the  
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or  
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
www.vishay.de • FaxBack +1-408-970-5600  
Document Number 86025  
Rev. 3, 24-Jun-98  
4 (4)  

BYT42MTAP 相关器件

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BYT42MZ BL Galaxy Electrical FAST RECOVERY RECTIFIER 获取价格
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BYT43A VISHAY Very Fast Soft Recovery Rectifier 获取价格
BYT43ATAP VISHAY Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, HERMETIC SEALED, MINIATURE, GLASS, DOT30B, 2 PIN 获取价格
BYT43B VISHAY Very Fast Soft Recovery Rectifier 获取价格
BYT43B TEMIC Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, 获取价格
BYT43BTAP VISHAY Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, HERMETIC SEALED, MINIATURE, GLASS, DOT30B, 2 PIN 获取价格
BYT43D VISHAY Very Fast Soft Recovery Rectifier 获取价格
BYT43D TEMIC Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, 获取价格
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