BYT52A_10 [VISHAY]

Fast Avalanche Sinterglass Diode; 快速雪崩二极管Sinterglass
BYT52A_10
型号: BYT52A_10
厂家: VISHAY    VISHAY
描述:

Fast Avalanche Sinterglass Diode
快速雪崩二极管Sinterglass

二极管
文件: 总4页 (文件大小:113K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M  
Vishay Semiconductors  
Fast Avalanche Sinterglass Diode  
FEATURES  
• Glass passivated junction  
• Hermetically sealed package  
• Low reverse current  
• Soft recovery characteristics  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
• Halogen-free according to IEC 61249-2-21  
definition  
949539  
MECHANICAL DATA  
APPLICATIONS  
Case: SOD-57  
• Fast rectification and switching diode  
Terminals: plated axial leads, solderable per MIL-STD-750,  
method 2026  
Polarity: color band denotes cathode end  
Mounting position: any  
Weight: approx. 369 mg  
PARTS TABLE  
PART  
TYPE DIFFERENTIATION  
R = 50 V; IFAV = 1.4 A  
PACKAGE  
SOD-57  
SOD-57  
SOD-57  
SOD-57  
SOD-57  
SOD-57  
SOD-57  
BYT52A  
BYT52B  
BYT52D  
BYT52G  
BYT52J  
BYT52K  
BYT52M  
V
VR = 100 V; IFAV = 1.4 A  
VR = 200 V; IFAV = 1.4 A  
VR = 400 V; IFAV = 1.4 A  
VR = 600 V; IFAV = 1.4 A  
VR = 800 V; IFAV = 1.4 A  
VR = 1000 V; IFAV = 1.4 A  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
VALUE  
50  
UNIT  
V
BYT52A  
BYT52B  
BYT52D  
BYT52G  
BYT52J  
BYT52K  
BYT52M  
VR = VRRM  
VR = VRRM  
VR = VRRM  
VR = VRRM  
VR = VRRM  
VR = VRRM  
VR = VRRM  
IFSM  
100  
200  
400  
600  
800  
1000  
50  
V
V
Reverse voltage = repetitive peak  
reverse voltage  
See electrical characteristics  
V
V
V
V
Peak forward surge current  
Average forward current  
tp = 10 ms, half sine wave  
On PC board  
A
IFAV  
0.85  
1.4  
A
l = 10mm  
IFAV  
A
BYT52J  
BYT52K  
BYT52M  
ER  
10  
mJ  
mJ  
mJ  
Non repetitive reverse avalanche  
energy  
I
(BR)R = 0.4 A  
ER  
10  
ER  
10  
Junction and storage temperature  
range  
Tj = Tstg  
- 55 to + 175  
°C  
Document Number: 86029  
Rev. 1.7, 30-Jul-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M  
Fast Avalanche Sinterglass Diode  
Vishay Semiconductors  
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
45  
UNIT  
K/W  
K/W  
Lead length l = 10 mm, TL = constant  
On PC board with spacing 25 mm  
RthJA  
Junction ambient  
RthJA  
100  
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
MIN.  
TYP.  
MAX.  
1.3  
UNIT  
Forward voltage  
IF = 1 A  
VF  
IR  
-
-
-
-
-
-
-
-
V
V
R = VRRM  
5
μA  
μA  
ns  
Reverse current  
VR = VRRM, Tj = 150 °C  
IR  
150  
200  
Reverse recovery time  
IF = 0.5 A, IR = 1 A, iR = 0.25 A  
trr  
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
120  
100  
80  
60  
40  
20  
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
VR = VRRM  
half sinewave  
RthJA = 45 K/W  
I = 10 mm  
l
l
RthJA = 100 K/W  
PCB: d = 25 mm  
TL = constant  
0
5
10  
15  
20  
25  
30  
0
20 40 60 80 100 120 140 160 180  
Tamb - Ambient Temperature (°C)  
949552  
l - Lead Length (mm)  
16329  
Fig. 1 - Max. Thermal Resistance vs. Lead Length  
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature  
10  
1000  
VR = VRRM  
Tj = 175 °C  
1
100  
10  
1
Tj = 25 °C  
0.1  
0.01  
0.001  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
25  
50  
75  
100  
125  
150  
175  
16328  
VF - Forward Voltage (V)  
16330  
Tj - Junction Temperature (°C)  
Fig. 2 - Max. Forward Current vs. Forward Voltage  
Fig. 4 - Max. Reverse Current vs. Junction Temperature  
www.vishay.com  
2
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 86029  
Rev. 1.7, 30-Jul-10  
BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M  
Fast Avalanche Sinterglass Diode  
Vishay Semiconductors  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
40  
f = 1 MHz  
VR = VRRM  
35  
30  
25  
20  
15  
10  
5
PR-Limit  
at 100 % VR  
PR-Limit  
at 80 % VR  
0
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
100  
16331  
Tj - Junction Temperature (°C)  
16332  
VR - Reverse Voltage (V)  
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature  
Fig. 6 - Diode Capacitance vs. Reverse Voltage  
PACKAGE DIMENSIONS in millimeters (inches): SOD-57  
26 (1.024) min.  
26 (1.024) min.  
4 (0.157) max.  
20543  
Document Number: 86029  
Rev. 1.7, 30-Jul-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree  
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and  
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay  
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to  
obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 11-Mar-11  
www.vishay.com  
1

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