BYT54A-TAP [VISHAY]
Rectifier Diode, Avalanche, 1 Element, 0.75A, 50V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2;
| 型号： | BYT54A-TAP |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Avalanche, 1 Element, 0.75A, 50V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件： | 总4页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYT54.
Vishay Telefunken
Fast Silicon Mesa Rectifiers
Features
Glass passivated junction
Hermetically sealed package
Low reverse current
Soft recovery characteristics
Applications
94 9539
Very fast rectifiers and switches
Absolute Maximum Ratings
T = 25 C
j
Parameter
Reverse voltage
=Repetitive peak reverse voltage
Test Conditions
Type
Symbol
Value
50
Unit
V
V
V
V
V
V
V
A
BYT54A
BYT54B
BYT54D
BYT54G
BYT54J
BYT54K
BYT54M
V =V
R
RRM
RRM
RRM
RRM
RRM
RRM
RRM
V =V
100
200
400
600
800
1000
30
R
V =V
R
V =V
R
V =V
R
V =V
R
V =V
R
Peak forward surge current
Average forward current
t =10ms,
half sinewave
on PC board
I
p
FSM
I
0.75
1.25
–65...+175
–65...+165
A
A
C
C
FAV
l=10mm, T =25 C
I
L
FAV
Junction and storage
temperature range
BYT54A–BYT54K
BYT54M
T =T
j
stg
T =T
j
stg
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
Symbol
Value
45
100
Unit
K/W
K/W
l=10mm, T =constant
R
thJA
R
thJA
L
on PC board with spacing 25mm
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
Type
Symbol Min
Typ Max Unit
Forward voltage
Reverse current
I =1A
V
1.5
5
150
100
V
A
A
ns
F
F
V =V
I
I
R
RRM
R
V =V
, T =150 C
R
RRM
j
R
Reverse recovery time I =0.5A, I =1A, i =0.25A
t
rr
F
R
R
Document Number 86031
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
BYT54.
Vishay Telefunken
Characteristics (Tj = 25 C unless otherwise specified)
120
100
80
60
40
20
0
1000
100
10
Scattering Limit
l
l
1
V =V
R
R RM
T =constant
L
0.1
30
200
0
5
10
15
20
25
0
40
80
120
160
94 9552
l – Lead Length ( mm )
94 9459
T – Junction Temperature ( °C )
j
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 4. Reverse Current vs. Junction Temperature
1.2
1.0
10
T =25°C
j
V =V
R
R RM
0.8
0.6
0.4
0.2
0
1
0.1
f=50Hz
R
100K/W
thJA
PCB
Scattering Limit
0.01
200
3.0
0
40
80
120
160
0
0.6
V
1.2
– Forward Voltage ( V )
F
1.8
2.4
94 9457
T
amb
– Ambient Temperature ( °C )
94 9460
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
Figure 5. Forward Current vs. Forward Voltage
20
16
12
8
2.0
V =V
R
R RM
f=50Hz
45K/W
L=10mm
1.6
1.2
0.8
0.4
0
R
thJA
f
1kHz
4
0
T =25°C
j
200
100
0
40
80
120
160
0.1
1
10
V – Reverse Voltage ( V )
R
94 9458
T
amb
– Ambient Temperature ( °C )
94 9461
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
www.vishay.de • FaxBack +1-408-970-5600
Document Number 86031
Rev. 2, 24-Jun-98
2 (4)
BYT54.
Vishay Telefunken
Dimensions in mm
3.6 max.
94 9538
Sintered Glass Case
SOD 57
Weight max. 0.5g
Cathode Identification
technical drawings
according to DIN
specifications
0.82 max.
26 min.
26 min.
4.2 max.
Document Number 86031
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
3 (4)
BYT54.
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
Document Number 86031
Rev. 2, 24-Jun-98
4 (4)
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