BYT85-1000 [VISHAY]
Ultra Fast Recovery Silicon Power Rectifier; 超快恢复颖电整流器
| 型号： | BYT85-1000 |
| 厂家： | 
VISHAY |
| 描述： | Ultra Fast Recovery Silicon Power Rectifier |
| 文件： | 总4页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYT85
Vishay Telefunken
Ultra Fast Recovery Silicon Power Rectifier
Features
Multiple diffusion
High voltage
High current
Ultra fast forward recovery time
Ultra fast reverse recovery time
14282
Applications
Fast rectifiers in S.M.P.S, freewheeling and snubber
diode in motor control circuits
Absolute Maximum Ratings
T = 25 C
j
Parameter
Reverse voltage
=Repetitive peak reverse voltage
Test Conditions
Type
Symbol
Value
600
800
1000
80
Unit
BYT85–600 V =V
BYT85–800 V =V
BYT85–1000 V =V
V
V
V
A
R
RRM
RRM
RRM
R
R
Peak forward surge current
10ms
half sinewave
I
FSM
Repetitive peak forward current
Average forward current
I
I
20
4
A
A
FRM
FAV
Junction and storage temperature range
T =T
–55...+150
C
j
stg
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction case
Test Conditions
Symbol
Value
3
Unit
K/W
R
thJC
Document Number 86035
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
BYT85
Vishay Telefunken
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
Type Symbol Min Typ Max Unit
Forward voltage
I =4A
V
V
1.8
1.8
10
V
V
A
F
F
F
I =4A, T =100 C
F
j
Reverse current
V =V
V =V
R
I
I
R
RRM
RRM
R
, T =100 C
0.1 mA
j
R
Forward recovery time
Turn on transient peak voltage
t
350
5
ns
V
I =4A, di /dt 50A/ s
fr
F
F
V
FP
Reverse recovery characteristics I =4A, di /dt=–100A/ s,
I
7
A
F
F
RM
V
=200V
t
70
125
ns
ns
Batt
IRM
Reverse recovery time
I =4A, di /dt=–100A/ s,
F
t
rr
F
V =200V
Batt
I =0.5A, I =1A, i =0.25A
t
rr
80
ns
F
R
R
Characteristics (Tj = 25 C unless otherwise specified)
1000
100
10
100
V =V
R
T
Case
=25°C
R RM
10
1
1
0.1
0.01
0.1
200
3.0
0
40
80
120
160
0
0.6
1.2
V – Forward Voltage ( V )
F
1.8
2.4
94 9477
T – Junction Temperature ( °C )
j
94 9476
Figure 3. Typ. Forward Current vs. Forward Voltage
Figure 1. Typ. Reverse Current vs. Junction Temperature
150
6
5
120
90
4
R
thJC
=3K/W
3
2
1
0
R
R
=5K/W
thJA
60
R
thJA
=10K/W
I =4A
F
=85K/W
T =25°C
30
0
thJA
C
V
=200V
Batt
200
200
0
50
100
150
0
40
80
120
160
94 9480 –dI /dt – Forward Current Rate of Change ( A/ s )
94 9475
T
amb
– Ambient Temperature ( °C )
F
Figure 4. Reverse Recovery Time for I
vs.
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
RM
Forward Current Rate of Change
www.vishay.de • FaxBack +1-408-970-5600
Document Number 86035
Rev. 2, 24-Jun-98
2 (4)
BYT85
Vishay Telefunken
15
12
9
250
200
150
6
3
0
100
50
0
I =4A
F
I =4A
F
T =25°C
C
T =25°C
C
V
=200V
Batt
V
=200V
Batt
200
200
0
50
100
150
0
50
100
150
94 9478 –dI /dt – Forward Current Rate of Change ( A/ s )
F
94 9479 –dI /dt – Forward Current Rate of Change ( A/ s )
F
Figure 5. Reverse Recovery Current vs.
Forward Current Rate of Change
Figure 6. Reverse Recovery Time vs.
Forward Current Rate of Change
Dimensions in mm
14276
Document Number 86035
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
3 (4)
BYT85
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
Document Number 86035
Rev. 2, 24-Jun-98
4 (4)
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