BYV26D-TR [VISHAY]
DIODE AVALANCHE 800V 1A SOD57;
| 型号： | BYV26D-TR |
| 厂家： | 
VISHAY |
| 描述： | DIODE AVALANCHE 800V 1A SOD57 局域网 |
| 文件： | 总4页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
www.vishay.com
Vishay Semiconductors
Ultra-Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Very low switching losses
• Low reverse current
• High reverse voltage
• Material categorization:
for definitions of compliance please see
949539
www.vishay.com/doc?99912
APPLICATIONS
click logo to get started
DESIGN SUPPORT TOOLS
• Switched mode power supplies
• High-frequency inverter circuits
Models
Available
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
MINIMUM ORDER QUANTITY
BYV26E
BYV26E-TR
5000 per 10" tape and reel
5000 per ammopack
25 000
25 000
BYV26E
BYV26E-TAP
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
BYV26A
VR = 200 V; IF(AV) = 1 A
VR = 400 V; IF(AV) = 1 A
VR = 600 V; IF(AV) = 1 A
VR = 800 V; IF(AV) = 1 A
BYV26B
BYV26C
BYV26D
BYV26E
VR = 1000 V; IF(AV) = 1 A
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
See electrical characteristics
tp = 10 ms, half sine wave
PART
SYMBOL
VALUE
UNIT
V
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
IFSM
200
400
V
Reverse voltage = repetitive peak reverse
voltage
600
V
800
V
1000
V
Peak forward surge current
30
A
Average forward current
IF(AV)
1
10
A
Non repetitive reverse avalanche energy
Junction and storage temperature range
I(BR)R = 1 A, inductive load
ER
mJ
°C
Tj = Tstg
-55 to +175
Rev. 1.8, 21-Feb-18
Document Number: 86040
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
www.vishay.com
Vishay Semiconductors
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Junction ambient
l = 10 mm, TL = constant
RthJA
45
K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
2.5
1.3
5
UNIT
IF = 1 A
VF
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
Forward voltage
IF = 1 A, Tj = 175 °C
VF
-
V
R = VRRM
IR
-
μA
μA
V
Reverse current
VR = VRRM, Tj = 150 °C
IR
-
300
500
700
900
1100
-
100
-
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
V(BR)R
V(BR)R
V(BR)R
V(BR)R
V(BR)R
trr
-
V
Reverse breakdown voltage
IR = 100 μA
-
V
-
V
-
V
30
30
30
75
75
ns
ns
ns
ns
ns
trr
-
Reverse recovery time
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
trr
-
trr
-
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
600
500
1000
100
10
VR = VRRM
VR = VRRM
RthJA = 45 K/W
RthJA = 100 K/W
200 V
400
300
200
400 V
600 V
800 V
1
100
0
1000 V
0.1
0
40
80
120
160
200
200
0
40
80
120
160
959729
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
959728
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 2 - Max. Reverse Current vs. Junction Temperature
Rev. 1.8, 21-Feb-18
Document Number: 86040
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
www.vishay.com
Vishay Semiconductors
1.2
1.0
40
f = 1 MHz
35
RthJA = 45 K/W
30
25
20
15
10
5
BYV26C
0.8
0.6
0.4
0.2
0
RthJA = 100 K/W
0
0.1
1
10
100
0
40
80
120
160
200
16380
959730
Tamb - Ambient Temperature (°C)
VR - Reverse Voltage (V)
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
10
40
35
f = 1 MHz
Tj = 175 °C
1
30
25
20
15
10
5
BYV26E
Tj = 25 °C
0.1
0.01
0.001
0
0
1
2
3
4
5
6
7
0.1
1
10
100
959731
VF - Forward Voltage (V)
VR - Reverse Voltage (V)
16381
Fig. 4 - Max. Reverse Current vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
26 (1.024) min.
4 (0.157) max.
20543
Rev. 1.8, 21-Feb-18
Document Number: 86040
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
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