BYV26DGPHE3 [VISHAY]
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, LEAD FREE, PLASTIC, DO-15, 2 PIN, Signal Diode;型号: | BYV26DGPHE3 |
厂家: | VISHAY |
描述: | DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, LEAD FREE, PLASTIC, DO-15, 2 PIN, Signal Diode 二极管 |
文件: | 总3页 (文件大小:316K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BYV26DGP & BYV26EGP
Vishay Semiconductors
Glass Passivated Ultrafast Rectifier
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
trr
1.0 A
800 V, 1000 V
30 A
75 ns
VF
1.3 V
Tj max.
175 °C
DO-204AC (DO-15)
* Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
Features
Mechanical Data
• Cavity-free glass-passivated junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low switching losses, high efficiency
• High forward surge capability
Case: DO-204AC, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
• Meets environmental standard MIL-S-19500
• Solder Dip 260 °C, 40 seconds
Polarity: Color band denotes cathode end
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer and Telecommuni-
cation
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter
Symbol
VRRM
BYV26DGP
800
BYV26EGP
1000
Unit
V
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRMS
VDC
560
800
700
V
V
A
Maximum DC blocking voltage
1000
Maximum average forward rectified current 0.375" (9.5 mm)
lead length (See Fig. 1)
IF(AV)
1.0
30
10
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non repetitive peak reverse energy (1)
IFSM
A
ERSM
mj
°C
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
Notes:
(1) Peak reverse energy measured at IR = 400 mA, TJ = TJ max. on inductive load, t = 20 µs
Document Number 88554
10-Aug-05
www.vishay.com
1
BYV26DGP & BYV26EGP
Vishay Semiconductors
Electrical Characteristics
TA = 25 °C unless otherwise specified
Parameter
Test condition
at 100 µA
Symbol
VBR
BYV26DGP
900
BYV26EGP
1100
Unit
V
Minimum avalanche
breakdown voltage
Maximum instantaneous
forward voltage
at 1.0 A
TJ = 25 °C
VF
IR
2.5
1.3
V
TJ = 175 °C
Maximum DC reverse current
at rated DC blocking voltage
TA = 25 °C
5.0
150
µA
ns
pF
TA = 165 °C
Max. reverse recovery time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
75
Typical junction capacitance
at 4.0 V, 1 MHz
CJ
15
Thermal Characteristics
TA = 25 °C unless otherwise specified
Parameter
Typical thermal resistance (1,2)
Symbol
RθJA
RθJL
BYV26DGP
BYV26EGP
Unit
70
16
°C/W
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, mounted on P.C.B. with
0.5 x 0.5" (12 x 12 mm) copper pads
(2) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsink
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
100
1.2
Resistive or
T
L
= Lead
10 ms, Single Half Sine-Wave
Inductive Load
Temperature
Lead Mounted
on Heatsinks
TJ = TJ max.
1.0
0.8
0.6
0.4
10
Mounted on P.C.B.
0.375” (9.5mm) Lead Length
on 0.5 x 0.5” (12 x 12mm)
Copper Pads
0.2
0
TA
= Ambient Temperature
25 50 75
Temperature (°C)
1
1
10
100
0
100
125
150
175
Number of Cycles at 60 Hz
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
Document Number 88554
10-Aug-05
2
BYV26DGP & BYV26EGP
Vishay Semiconductors
100
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
Tj = 175 °C
Tj = 150 °C
10
1
Tj = 125 °C
0.1
Tj = 25 °C
1
0.1
0.01
1
10
100
0.2
0.6
1
1.4
1.8
2.2
2.6
3
3.4
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Voltage Characteristics
Figure 5. Typical Junction Capacitance
100
100
Tj = 175 °C
Tj = 165 °C
10
Tj = 125 °C
1
10
Mounted on P.C.B.
0.1
0.375” (9.5mm) Lead Length
on 0.47 x 0.47” (12 x 12mm)
Copper Pads
Tj = 25 °C
0.01
1
0.001
0.01
0.1
1
10
100
0
20
Percent of Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
40
60
80
100
t, Pulse Duration (sec.)
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
Dia.
1.0 (25.4)
min.
0.300 (7.6)
0.230 (5.8)
0.140 (3.6)
0.104 (2.6)
Dia.
1.0 (25.4)
min.
Document Number 88554
10-Aug-05
www.vishay.com
3
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