BYV27-100/4 [VISHAY]
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-204AP, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2;型号: | BYV27-100/4 |
厂家: | VISHAY |
描述: | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-204AP, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 |
文件: | 总5页 (文件大小:113K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BYV27/...
Vishay Semiconductors
Ultra Fast Avalanche Sinterglass Diode
Features
• Controlled avalanche characteristic
• Low forward voltage
e2
• Ultra fast recovery time
• Glass passivated junction
• Hermetically sealed package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
949539
Terminals: Plated axial leads, solderable per MIL-
STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Applications
Very fast rectification diode e.g. for switch mode
power supply
Weight: approx. 369 mg
Mechanical Data
Case: SOD-57 Sintered glass case
Parts Table
Part
Type differentiation
VR = 50 V; IFAV = 2 A
R = 100 V; IFAV = 2 A
VR = 150 V; IFAV = 2 A
R = 200 V; IFAV = 2 A
Package
BYV27-50
BYV27-100
BYV27-150
BYV27-200
SOD-57
SOD-57
SOD-57
SOD-57
V
V
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Value
Unit
V
Peak reverse voltage, non
repetitive
see electrical characteristics
BYV27-50
VRSM
55
BYV27-100
BYV27-150
BYV27-200
BYV27-50
VRSM
VRSM
110
165
220
50
V
V
V
V
VRSM
Reverse voltage = Repetitive
peak reverse voltage
see electrical characteristics
tp = 10 ms, half sinewave
V
R = VRRM
BYV27-100
BYV27-150
BYV27-200
VR = VRRM
R = VRRM
VR = VRRM
IFSM
100
150
200
50
V
V
V
A
A
V
Peak forward surge current
Repetitive peak forward current
IFRM
15
Document Number 86042
Rev. 1.6, 21-Jun-05
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BYV27/...
Vishay Semiconductors
Parameter
Test condition
Part
Symbol
IFAV
Value
2
Unit
A
Average forward current
Pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
I
(BR)R = 1 A, Tj = 175 °C
ER
20
mJ
Junction and storage
temperature range
Tj = Tstg
- 55 to + 175
°C
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
Symbol
Value
Unit
l = 10 mm, TL = constant
RthJA
RthJA
45
K/W
K/W
on PC board with spacing
25 mm
100
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
1.07
Unit
V
Forward voltage
IF = 3 A
IF = 3 A, Tj = 175 °C
R = VRRM
VRSM
R = VRRM, T j = 165 °C
F = 0.5 A, IR = 1 A, iR = 0.25 A
VF
VF
IR
0.88
1
V
Reverse current
V
µA
µA
µA
ns
IR
100
150
25
V
IR
Reverse recovery time
I
trr
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
120
l
l
100.000
10.000
1.000
100
80
T = 175 °C
j
T = constant
L
T
j
= 25°C
60
0.100
40
0.010
20
0
0.001
30
0
5
10
15
20
25
0.0
0.5
1.0
V – Forward Voltage ( V )
F
1.5
2.0
2.5
l – Lead Length ( mm )
94 9526
16382
Figure 1. Typ. Thermal Resistance vs. Lead Length
Figure 2. Forward Current vs. Forward Voltage
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Document Number 86042
Rev. 1.6, 21-Jun-05
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BYV27/...
Vishay Semiconductors
2.5
2.0
1.5
1.0
0.5
0.0
70
60
50
40
30
20
10
0
V
= V
RRM
R
V = V
R RRM
half sinewave
thJA
R
= 45 K/W
l = 10 mm
P –Limit
R
@100 % V
R
P –Limit
@80 % V
R
R
R
= 100 K/W
thJA
PCB: d = 25 mm
0
20 40 60 80 100 120 140 160 180
– Ambient Temperature (°C )
25
50
75
100 125 150 175
16383
T
16385
T – Junction Temperature (°C )
amb
j
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
1000
100
V
= V
RRM
f = 1 MHz
R
80
60
40
20
0
100
10
1
25
50
75
100 125 150 175
0.1
1.0
V – Reverse Voltage ( V )
R
10.0
100.0
16384
T – Junction Temperature (°C )
16386
j
Figure 4. Reverse Current vs. Junction Temperature
Figure 6. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm (Inches)
3.6 (0.140)max.
94 9538
Sintered Glass Case
SOD-57
Cathode Identification
ISO Method E
0.82 (0.032) max.
26(1.014) min.
26(1.014) min.
4.0 (0.156) max.
Document Number 86042
Rev. 1.6, 21-Jun-05
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BYV27/...
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 86042
Rev. 1.6, 21-Jun-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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