BYV28-100-E3/54 [VISHAY]
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3.5A, 100V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2;
| 型号： | BYV28-100-E3/54 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3.5A, 100V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件： | 总4页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYV28/...
Vishay Semiconductors
Ultra Fast Avalanche Sinterglass Diode
Features
• Controlled avalanche characteristic
• Low forward voltage
e2
• Ultra fast recovery time
949588
• Glass passivated junction
• Hermetically sealed package
• Lead (Pb)-free component
Mechanical Data
Case: SOD-64 Sintered glass case
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Applications
Very fast rectification e.g. for switch mode power sup-
ply
Weight: approx. 858 mg
Parts Table
Part
Type differentiation
VR = 50 V; IFAV = 3.5 A
Package
SOD-64
BYV28-50
BYV28-100
BYV28-150
BYV28-200
V
V
V
R = 100 V; IFAV = 3.5 A
R = 150 V; IFAV = 3.5 A
R = 200 V; IFAV = 3.5 A
SOD-64
SOD-64
SOD-64
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
VRSM
Value
55
Unit
V
Peak reverse voltage, non
repetitive
see electrical characteristics
BYV28/50
BYV28/100
BYV28/150
BYV28/200
BYV28/50
VRSM
VRSM
110
165
220
50
V
V
V
V
VRSM
Reverse voltage = Repetitive
peak reverse voltage
see electrical characteristics
tp = 10 ms, half sinewave
V
R = VRRM
BYV28/100
BYV28/150
BYV28/200
VR = VRRM
100
150
200
90
V
V
V
R = VRRM
R = VRRM
IFSM
V
V
Peak forward surge current
Repetitive peak forward current
Average forward current
A
IFRM
25
A
IFAV
3.5
20
A
Pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
I
(BR)R = 1 A, Tj = 175 °C
ER
mJ
Junction and storage
temperature range
Tj = Tstg
- 55 to + 175
°C
Document Number 86044
Rev. 1.6, 14-Apr-05
www.vishay.com
1
BYV28/...
Vishay Semiconductors
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
Symbol
RthJA
Value
25
Unit
K/W
l = 10 mm, TL = constant
on PC board with spacing
25 mm
RthJA
70
K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
1.1
Unit
V
Forward voltage
IF = 5 A
IF = 5 A, Tj = 175 °C
R = VRRM
VRSM
VF
VF
IR
0.89
1
V
Reverse current
V
µA
µA
µA
ns
IR
100
150
30
V
R = VRRM, Tj = 165 °C
IR
Reverse recovery time
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
40
4.0
V
= V
RRM
R
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
half sinewave
30
20
≤
R
25 K/W
l = 10 mm
thJA
l
l
10
0
R
70 K/W
≤
thJA
PCB: d = 25 mm
T = constant
L
30
0
5
10
15
20
25
0
20 40 60 80 100 120 140 160 180
– Ambient Temperature( °C )
l – Lead Length ( mm )
94 9548
16454
T
amb
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 3. Max. Average Forward Current vs. Ambient Temperature
1000
100.000
V
= V
RRM
R
10.000
1.000
0.100
0.010
0.001
T =175°C
j
100
10
1
T = 25 °C
j
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
– Forward Voltage ( V )
25
50
75
100 125 150 175
16453
V
16455
T – Junction Temperature (°C )
F
j
Figure 2. Forward Current vs. Forward Voltage
Figure 4. Reverse Current vs. Junction Temperature
www.vishay.com
2
Document Number 86044
Rev. 1.6, 14-Apr-05
BYV28/...
Vishay Semiconductors
60
50
40
30
20
10
0
250
200
150
100
50
V
= V
RRM
R
f = 1 MHz
P –Limit
R
@100 % V
R
P –Limit
R
@80 % V
R
0
25
50
75
100 125 150 175
0.1
1.0
V – Reverse Voltage ( V )
R
10.0
100.0
16456
T – Junction Temperature (°C )
16457
j
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
Figure 6. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm (Inches)
4.3 (0.168) max.
Sintered Glass Case
SOD-64
Cathode Identification
ISO Method E
1.35 (0.053) max.
26(1.014) min.
26 (1.014) min.
4.0 (0.156) max.
94 9587
Document Number 86044
Rev. 1.6, 14-Apr-05
www.vishay.com
3
BYV28/...
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
4
Document Number 86044
Rev. 1.6, 14-Apr-05
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