BYV29F-200HE3_A/P [VISHAY]
Rectifier Diode,;型号: | BYV29F-200HE3_A/P |
厂家: | VISHAY |
描述: | Rectifier Diode, 二极管 |
文件: | 总5页 (文件大小:136K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BYV29-xxx, BYV29F-xxx, BYV29B-xxx, UG8xT, UGF8xT, UGB8xT
www.vishay.com
Vishay General Semiconductor
Ultrafast Rectifier
FEATURES
TO-220AC
ITO-220AC
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
2
2
• High forward surge capability
1
1
BYV29, UG8 Series
PIN 1
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (D2PAK (TO-263AB package))
BYV29F, UGF8 Series
PIN 1
CASE
PIN 2
• Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AC and ITO-220AC package)
PIN 2
D2PAK (TO-263AB)
• AEC-Q101 qualified available
K
- Automotive ordering code: base P/NHE3
(for ITO-220AC and D2PAK (TO-263AB package))
2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1
BYV29B, UGB8 Series
PIN 1
K
TYPICAL APPLICATIONS
PIN 2
HEATSINK
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
DESIGN SUPPORT TOOLS AVAILABLE
3
D
3D Models
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
Base P/N-E3
-
RoHS-compliant, commerical grade
IF(AV)
8.0 A
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
VRRM
300 V to 400 V
(“_X” denotes revision code e.g. A, B,....)
IFSM
110 A
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
trr
VF
35 ns
1.03 V
meets JESD 201 class 2 whisker test
TJ max.
150 °C
TO-220AC, ITO-220AC, D2PAK (TO-263AB)
Single
Polarity: as marked
Package
Mounting Torque: 10 in-lbs max.
Circuit configurations
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
BYV29-300
UG8FT
300
BYV29-400
UG8GT
400
PARAMETER
SYMBOL
UNIT
Maximum repetitive peak reverse voltage
Maximum working reverse voltage
Maximum RMS voltage
VRRM
VRWM
VRMS
VDC
V
V
V
V
A
300
210
300
400
280
400
Maximum DC blocking voltage
Maximum average forward rectified current at TC = 100 °C
IF(AV)
8.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
110
A
Operating junction and storage temperature range
TJ, TSTG
VAC
-40 to +150
1500
°C
V
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min
Revision: 12-Jun-2019
Document Number: 88557
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV29-xxx, BYV29F-xxx, BYV29B-xxx, UG8xT, UGF8xT, UGB8xT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
BYV29-300,
UG8FT
BYV29-400,
UG8GT
PARAMETER
TEST CONDITIONS
SYMBOL
UNIT
TJ = 25 °C
1.25
1.03
1.40
10
IF = 8 A
IF = 20 A
(1)
Maximum instantaneous forward voltage
TJ = 150 °C
TJ = 25 °C
TC = 25 °C
TC = 100 °C
VF
V
Maximum DC reverse current at VRRM
IR
μA
350
Maximum reverse recovery time
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
trr
35
50
ns
ns
IF = 1.0 A, dI/dt = 100 A/μs,
VR = 30 V, Irr = 0.1 IRM
IF = 10 A, dI/dt = 50 A/μs,
R = 30 V, TC = 100 °C
Maximum reverse recovery current
Maximum recovered stored charged
IRM
Qrr
5.5
55
A
V
IF = 2 A, dI/dt = 20 A/μs,
R = 30 V, Irr = 0.1 IRM
nC
V
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
BYV29
UG8
BYV29F
UGF8
BYV29B
UGB8
PARAMETER
SYMBOL
UNIT
Typical thermal resistance from junction to case
RJC
2.5
5.5
2.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AC
BYV29-400-E3/45
1.80
1.95
1.77
1.77
1.95
45
45
45
81
P
50/tube
50/tube
50/tube
800/reel
50/tube
Tube
Tube
ITO-220AC
BYV29F-400-E3/45
BYV29B-400-E3/45
BYV29B-400-E3/81
BYV29F-400HE3_A/P (1)
D2PAK (TO-263AB)
D2PAK (TO-263AB)
ITO-220AC
Tube
Tape and reel
Tube
D2PAK (TO-263AB)
D2PAK (TO-263AB)
BYV29B-400HE3_A/P (1)
BYV29B-400HE3_A/I (1)
1.77
1.77
P
I
50/tube
800/reel
Tube
Tape and reel
Note
(1)
AEC-Q101 qualified, available in ITO-220AC and TO-263AB package
Revision: 12-Jun-2019
Document Number: 88557
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV29-xxx, BYV29F-xxx, BYV29B-xxx, UG8xT, UGF8xT, UGB8xT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
12
10
8
1000
100
10
TJ = 125 °C
TJ = 100 °C
Resistive or Inductive Load
6
TJ = 25 °C
1
4
0.1
0.01
2
0
0
25
50
75
100
125
150
175
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Charateristics
150
160
140
120
100
80
TC = 100 °C
8.3 ms Single Half Sine-Wave
trr
Qrr
125
100
75
50
25
0
dI/dt = 150 A/μs
dI/dt = 50 A/μs
dI/dt = 100 A/μs
dI/dt = 20 A/μs
60
40
dI/dt = 100 A/μs
20
dI/dt = 150 A/μs
dI/dt = 20 A/μs
0
50
75
125
1
10
100
25
100
Number of Cycles at 60 Hz
Junction Temperature (°C)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Reverse Switching Characteristics Per Leg
100
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = 125 °C
10
TJ = 100 °C
1
10
TJ = 25 °C
0.1
0.01
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Junction Capacitance
Revision: 12-Jun-2019
Document Number: 88557
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV29-xxx, BYV29F-xxx, BYV29B-xxx, UG8xT, UGF8xT, UGB8xT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AC
TO-220AC
0.415 (10.54) MAX.
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.154 (3.91) DIA.
0.148 (3.74) DIA.
0.185 (4.70)
0.370 (9.40)
0.360 (9.14)
0.404 (10.26)
0.384 (9.75)
0.175 (4.44)
0.055 (1.39)
0.076 (1.93) REF.
0.113 (2.87)
0.103 (2.62)
0.045 (1.14)
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.076 (1.93) REF.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
45° REF.
0.145 (3.68)
0.135 (3.43)
0.600 (15.24)
0.580 (14.73)
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
PIN
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
1
2
0.350 (8.89)
0.330 (8.38)
7° REF.
0.191 (4.85)
0.171 (4.35)
PIN
1.148 (29.16)
1.118 (28.40)
1
2
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.057 (1.45)
0.560 (14.22)
0.025 (0.64)
0.015 (0.38)
PIN 1
PIN 2
0.045 (1.14)
0.530 (13.46)
0.028 (0.71)
0.020 (0.51)
CASE
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
D2PAK (TO-263AB)
Mounting Pad Layout
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) min.
0.055 (1.40)
0.045 (1.14)
0.245 (6.22)
MIN.
K
0.33 (8.38) min.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.670 (17.02)
0.591 (15.00)
1
K
2
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) min.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 12-Jun-2019
Document Number: 88557
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
Document Number: 91000
1
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