BYV32-200/45 [VISHAY]
Rectifier Diode, 1 Phase, 2 Element, 18A, 200V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3;
| 型号： | BYV32-200/45 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 18A, 200V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3 |
| 文件： | 总4页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYV32, BYVF32 & BYVB32 Series
Vishay Semiconductors
formerly General Semiconductor
Dual Ultrafast Rectifiers
Reverse Voltage 50 to 200V
Forward Current 18A
Reverse Recovery Time 25ns
ITO-220AB (BYVF32 Series)
0.188 (4.77)
0.172 (4.36)
0.405 (10.27)
0.383 (9.72)
0.110 (2.80)
0.100 (2.54)
TO-220AB (BYV32 Series)
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.131 (3.39)
0.122 (3.08)
0.140 (3.56)
0.130 (3.30)
DIA.
DIA.
0.154 (3.91)
0.148 (3.74)
0.370 (9.40)
0.360 (9.14)
0.055 (1.39)
0.045 (1.14)
0.676 (17.2)
0.646 (16.4)
0.600 (15.5)
0.580 (14.5)
0.113 (2.87)
0.103 (2.62)
0.350 (8.89)
0.330 (8.38)
0.145 (3.68)
0.135 (3.43)
PIN
3
2
1
0.603 (15.32)
0.573 (14.55)
0.410 (10.41)
0.390 (9.91)
0.350 (8.89)
0.330 (8.38)
0.191 (4.85)
0.171 (4.35)
0.635 (16.13)
0.625 (15.87)
PIN
2
0.110 (2.80)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
1
3
1.148 (29.16)
1.118 (28.40)
0.060 (1.52)
PIN 1
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
PIN 2
PIN 3
0.560 (14.22)
0.037 (0.94)
0.027 (0.69)
PIN 1
PIN 3
PIN 2
CASE
0.530 (13.46)
0.022 (0.55)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.022 (0.56)
0.014 (0.36)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
TO-263AB (BYVB32 Series)
0.411 (10.45)
0.190 (4.83)
0.380 (9.65)
0.055 (1.40)
0.045 (1.14)
0.160 (4.06)
Mounting Pad Layout TO-263AB
0.245 (6.22)
MIN
0.42
(10.66)
K
Dimensions in inches
and (millimeters)
0.33
(8.38)
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.591 (15.00)
0.63
(17.02)
K
1
2
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.037 (0.940)
0.027 (0.686)
0.021 (0.53)
0.014 (0.36)
PIN 1
PIN 2
0.08
(2.032)
0.12
(3.05)
K - HEATSINK
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.24
(6.096)
0.205 (5.20)
0.195 (4.95)
Features
Mechanical Data
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Case: JEDEC TO-220AB, ITO-220AB & TO-263AB
molded plastic body
• Dual rectifier construction, positive centertap
• Glass passivated chip junctions
• Low power loss
• Low forward voltage, high current capability
• High surge current capability
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C, 0.16" (4.06mm) from case for 10 seconds
Polarity: As marked Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
• Superfast recovery times for high efficiency
Document Number 88558
26-Mar-03
www.vishay.com
1
BYV32, BYVF32 & BYVB32 Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
Symbol BYV32-50 BYV32-100 BYV32-150 BYV32-200 Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
105
150
200
140
200
V
V
V
A
Maximum DC blocking voltage
100
Maximum average forward rectified current at TC = 125°C
IF(AV)
18
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) per leg
IFSM
TJ, TSTG
VISOL
150
A
°C
V
Operating junction and storage temperature range
–65 to +150
4500 (1)
3500 (2)
1500 (3)
RMS Isolation voltage (BYVF type only) from terminals to
heatsink with t = 1.0 second, RH ≤ 30%
Electrical Characteristics(TC = 25°C unless otherwise noted)
Parameter
Symbol BYV32-50 BYV32-100 BYV32-150 BYV32-200 Unit
Maximum instantaneous forward voltage per leg at: (4)
at IF = 20A
VF
1.15
0.85
V
at IF = 5.0A, TJ = 100°C
Maximum DC reverse current per leg
at rated DC blocking voltage
TJ = 25°C
TJ = 100°C
10
600
IR
µA
Maximum reverse recovery time per leg at
IF = 1A, VR = 30V, di/dt = 100A/µs, Irr = 10% IRM
trr
25
45
ns
Typical junction capacitance per leg at 4V, 1MHz
CJ
pF
Thermal Characteristics(TC = 25°C unless otherwise noted)
Parameter
Symbol
BYV
BYVF
BYVB
Unit
°C/W
Thermal resistance from junction to case per leg
RΘJC
1.6
5.0
1.6
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9mm (0.19”)
(4) Pulse test: 300µs pulse width, 1% duty cycle
www.vishay.com
2
Document Number 88558
26-Mar-03
BYV32, BYVF32 & BYVB32 Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Maximum Non-Repetitive Peak
Forward Current Derating Curve
Forward Surge Current Per Leg
20
150
Resistive or Inductive Load
TJ = 150°C
18
10ms Single Half Sine-Wave
(JEDEC Method)
125
16
12
100
75
50
25
0
8.0
4.0
0
25
50
75
150
0
100
125
1
10
100
Number of Cycles at 50 HZ
Case Ambient Temperature (°C)
Typical Instantaneous
Forward Characteristics Per Leg
Typical Reverse Leakage
Characteristics Per Leg
1000
100
10
100
10
TJ = 125°C
TC = 100°C
TJ = 25°C
1
1
0.1
Pulse Width = 300µs
1% Duty Cycle
TC = 25°C
0.1
0.01
0
20
40
60
80
100
0.1
0.3
0.5
0.7
0.9
1.1
1.3
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Typical Junction Capacitance Per Leg
60
50
40
TJ = 25°C
f = 1.0 MHZ
Vsig = 5mVp-p
30
20
10
0
1
10
100
Reverse Voltage (V)
Document Number 88558
26-Mar-03
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
相关型号：
BYV32-200M
HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS
SEME-LAB
BYV32-50-E3/45
DIODE 9 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
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