BYVB32-100-E3/31 [VISHAY]

Rectifier Diode, 1 Phase, 2 Element, 18A, 100V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3;


型号：	BYVB32-100-E3/31
厂家：	VISHAY
描述：	Rectifier Diode, 1 Phase, 2 Element, 18A, 100V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 功效二极管
文件：	总5页 (文件大小：143K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BYV(F,B)32-50 thru BYV(F,B)32-200

Vishay General Semiconductor

Dual Common-Cathode Ultrafast Rectifier

FEATURES

TO-220AB

ITO-220AB

• Glass passivated chip junction

• Ultrafast recovery time

• Low switching losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• Meets MSL level 1, per J-STD-020C, LF max peak

of 245 °C (for TO-263AB package)

BYV32 Series

BYVF32 Series

PIN 1

PIN 2

CASE

PIN 1

• Solder Dip 260 °C, 40 seconds (for TO-220AB &

ITO-220AB package)

PIN 2

PIN 3

TO-263AB

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode

power supplies, inverters, free-wheeling diodes,

dc-to-dc converters, and other power switching

application.

BYVB32 Series

PIN 1

PIN 2

HEATSINK

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Epoxy meets UL 94V-0 flammability rating

MAJOR RATINGS AND CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

t_rr

18 A

50 V to 200 V

150 A

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

25 ns

V_F

0.85 V

Polarity: As marked

T_jmax.

150 °C

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL BYV32-50 BYV32-100 BYV32-150 BYV32-200

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

Maximum DC blocking voltage

Maximum average forward rectified current at T_C= 125 °C

100

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

T_J, T_STG

V_AC

150

°C

Operating storage and temperature range

- 65 to + 150

1500

Isolation voltage (ITO-220AB only)

From terminal to heatsink t = 1 minute

Document Number 88558

18-Aug-06

www.vishay.com

BYV(F,B)32-50 thru BYV(F,B)32-200

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL BYV32-50 BYV32-100 BYV32-150 BYV32-200 UNIT

Maximum instantaneous

at I_F= 20 A

1.15

0.85

T_j= 100 °C

V_F

forward voltage per diode ⁽¹⁾at I_F= 5.0 A

Maximum DC reverse

current per diode at rated

DCblockingvoltage

T_j= 25 °C

T_j= 100 °C

600

I_R

µA

Maximum reverse

recovery time per diode

at I_F= 1 A, V_R= 30 V,

di/dt = 100 A/µs, I_rr= 10 % I_RM

t_rr

Typical junction

capacitance per diode

at 4.0 V, 1 MHz

C_J

Note:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

BYV

BYVF

BYVB

UNIT

Typical thermal resistance from junction to case per diode

R_θJC

1.6

5.0

1.6

°C/W

ORDERING INFORMATION

PACKAGE

TO-220AB

ITO-220AB

TO-263AB

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

50/Tube

DELIVERY MODE

Tube

BYV32-200-E3/45

1.85

1.97

1.35

BYVF32-200-E3/45

BYVB32-200-E3/45

BYVB32-200-E3/81

50/Tube

Tube

50/Tube

Tube

800/Reel

Tape Reel

RATINGS AND CHARACTERISTICS CURVES

(T = 25 °C unless otherwise noted)

150

125

Resistive or Inductive Load

Tj = 150 °C

10 ms Single Half Sine-Wave

100

150

100

125

Number of Cycles at 50 Hz

Case Ambient Temperature (°C)

Figure 1. Forward Current Derating Curve

Figure 2. Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

www.vishay.com

Document Number 88558

18-Aug-06

BYV(F,B)32-50 thru BYV(F,B)32-200

Vishay General Semiconductor

100

= 25 °C

f = 1.0 MHz

sig = 5 mVp-p

Tj = 125 °C

Tj = 25 °C

0.1

Pulse Width = 300 µs

1 % Duty Cycle

0.01

100

0.1

0.3

0.5

0.7

0.9

1.1

1.3

Reverse Voltage (V)

Instantaneous Forward Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics Per Diode

Figure 5. Typical Junction Capacitance Per Diode

1000

TC = 100 °C

100

= 25 °C

0.1

100

Percent of Rated Peak Reverse Voltage (%)

Figure 4. Typical Reverse Leakage Characteristics Per Diode

Document Number 88558

18-Aug-06

www.vishay.com

BYV(F,B)32-50 thru BYV(F,B)32-200

Vishay General Semiconductor

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-220AB

ITO-220AB

See note

0.404(10.26)

0.384(9.75)

0.190(4.83)

0.170(4.32)

0.415 (10.54) MAX.

See note

0.076Ref.

(1.93)ref.

(4.70)

0.185

0.175 (4.44)

0.154 (3.91)

0.148 (3.74)

0.110(2.79)

0.100(2.54)

0.370 (9.40)

0.360 (9.14)

0.076Ref.

(1.93)

Ref.

7°Ref.

(1.39)

0.045 (1.14)

0.055

45°Ref.

0.113 (2.87)

0.103 (2.62)

0.140(3.56)DIA.

0.125(3.17)DIA.

0.135(3.43)DIA.

0.122(3.08)DIA.

0.671(17.04)

0.651(16.54)

0.600(15.24)

0.580(14.73)

0.145 (3.68)

0.135 (3.43)

7°Ref.

0.635 (16.13)

0.625 (15.87)

0.603 (15.32)

0.573 (14.55)

0.350(8.89)

0.330(8.38)

0.350 (8.89)

0.330 (8.38)

0.191(4.85)

0.171(4.35)

7°Ref.

0.160 (4.06)

0.140 (3.56)

1.148 (29.16)

1.118 (28.40)

0.560(14.22)

0.530(13.46)

0.110 (2.79)

0.100 (2.54)

0.057(1.45)

0.045(1.14)

0.057 (1.45)

0.045 (1.14)

0.080(2.03)

0.065(1.65)

0.110(2.79)

0.100(2.54)

0.560 (14.22)

0.530 (13.46)

0.105 (2.67)

0.095 (2.41)

0.035(0.89)

0.025(0.64)

0.035 (0.90)

0.028 (0.70)

0.025(0.64)

0.015(0.38)

0.105(2.67)

0.095(2.41)

0.104 (2.65)

0.096 (2.45)

0.028 (0.71)

0.020(0.51)

0.022 (0.56)

0.014 (0.36)

0.205 (5.20)

0.195 (4.95)

0.205(5.21)

0.195(4.95)

Note:Copperexposure is allowablefor 0.005(0.13)Max. from the body

TO-263AB

0.41 (10.45)

0.380 (9.65)

0.190 (4.83)

0.160 (4.06)

Mounting Pad Layout

0.055 (1.40)

0.045 (1.14)

0.42

MIN.

0.245 (6.22)

MIN

(10.66)

0.33

(8.38)

0.055 (1.40)

0.047 (1.19)

MIN.

0.360 (9.14)

0.320 (8.13)

0.624 (15.85)

0.591(15.00)

0.670 (17.02)

0.591 (15.00)

0-0.01 (0-0.254)

0.110 (2.79)

0.090 (2.29)

0.021 (0.53)

0.014 (0.36)

0.15

(3.81)

0.037 (0.940)

0.027 (0.686)

MIN.

0.08

MIN.

0.140 (3.56)

0.110 (2.79)

0.105 (2.67)

0.095 (2.41)

(2.032)

0.205 (5.20)

0.195 (4.95)

0.105 (2.67)

(0.095) (2.41)

www.vishay.com

Document Number 88558

18-Aug-06

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

www.vishay.com

BYVB32-100-E3/31 [VISHAY]

相关型号：

BYVB32-100-E3/45

BYVB32-100-E3/81

BYVB32-100-HE3/45

BYVB32-100-HE3/81

BYVB32-100/31

BYVB32-100/81

BYVB32-100HE3/45

BYVB32-100HE3/81

BYVB32-150

BYVB32-150-E3/31

BYVB32-150-E3/81

BYVB32-150-HE3/45