BYX82TAP [VISHAY]
暂无描述;
| 型号： | BYX82TAP |
| 厂家： | 
VISHAY |
| 描述： | 暂无描述 整流二极管 |
| 文件： | 总5页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYX82...BYX86
Vishay Telefunken
Silicon Mesa Rectifiers
Features
Glass passivated junction
Hermetically sealed package
Low reverse current
High surge current loading
Applications
94 9539
Rectifier, general purpose
Absolute Maximum Ratings
T = 25 C
j
Parameter
Reverse voltage
=Repetitive peak reverse voltage
Test Conditions
Type
Symbol
Value
200
400
600
800
1000
50
Unit
V
V
V
V
BYX82
BYX83
BYX84
BYX85
BYX86
V =V
R
RRM
RRM
RRM
RRM
RRM
V =V
R
V =V
R
V =V
R
V =V
R
V
A
Peak forward surge current
t =10ms,
p
I
FSM
half sinewave
Repetitive peak forward current
Average forward current
I
I
10
2
8
A
A
FRM
T
amb
45 C
FAV
2
2
2
i *t–rating
i *t
A *s
Junction and storage temperature range
T =T
–65...+175
C
j
stg
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
l=10mm, T =constant
on PC board with spacing 25mm
Symbol
Value
45
100
Unit
K/W
K/W
R
thJA
R
thJA
L
Document Number 86052
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
BYX82...BYX86
Vishay Telefunken
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
Type
Symbol Min
Typ Max Unit
Forward voltage
Reverse current
I =1A
V
0.9
0.1
10
20
2
1.0
1
25
V
A
A
pF
s
F
F
V =V
I
I
R
RRM
R
V =V
, T =100 C
R
RRM
j
R
Diode capacitance
Reverse recovery time
Reverse recovery charge
V =4V, f=0.47MHz
C
D
t
rr
R
I =0.5A, I =1A, i =0.25A
4
6
F
R
R
I =I =1A, di/dt=5A/ s
Q
rr
3
C
F
R
Characteristics (Tj = 25 C unless otherwise specified)
120
100
80
60
40
20
0
10
l
l
T =175°C
j
1
T =constant
L
T =25°C
j
0.1
0.01
Scattering Limits
30
3.0
0
5
10
15
20
25
0
0.6
1.2
1.8
2.4
94 9572
l – Lead Length ( mm )
94 9573
V – Forward Voltage ( V )
F
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 3. Forward Current vs. Forward Voltage
240
30
R
thJA
35K/W
R
thJA
57K/W
200
160
120
80
R
thJA
100K/W
24
18
12
V
R RM
V
R
BYX
82
BYX
84
BYX
83
BYX
85
6
40
f=470kHz
T =25°C
j
BYX
86
0
0
1600
100
0
400
800
1200
0.1
1
10
V – Reverse Voltage ( V )
R
94 9579
Reverse / Repetitive Peak Reverse Voltage ( V )
94 9574
Figure 2. Junction Temperature vs.
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
Reverse/Repetitive Peak Reverse Voltage
www.vishay.de • FaxBack +1-408-970-5600
Document Number 86052
Rev. 2, 24-Jun-98
2 (5)
BYX82...BYX86
Vishay Telefunken
1000
100
10
V
200V
100K/W
RRM
R
thJA
t /T=0.5
p
t /T=0.2
p
T
amb
=25°C
t /T=0.1
p
T
amb
=100°C
T
amb
=45°C
t /T=0.05
p
T
amb
=125°C
T
amb
=70°C
0.02
0.01
T
=150°C
amb
Single Pulse
1
–3
–2
–1
0
1
0
1
2
10
10
10
10
10
10
10
– Repetitive Peak
10
I
FRM
94 9575
t – Pulse Length ( s )
p
Forward Current ( A )
Figure 5. Thermal Response
1000
100
10
V
1000V
10 s
100K/W
RRM
t
R
thJA
T
amb
=25°C
t /T=0.5
p
T
=45°C
amb
t /T=0.2
p
T
=60°C
=70°C
amb
t /T=0.1
p
T
amb
t /T=0.05
p
0.02
0.01
T
amb
=100°C
Single Pulse
1
–3
–2
–1
0
1
–1
0
1
10
10
10
10
10
10
10
– Repetitive Peak
10
I
FRM
94 9578
t – Pulse Length ( s )
p
Forward Current ( A )
Figure 6. Thermal Response
Document Number 86052
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
3 (5)
BYX82...BYX86
Vishay Telefunken
1000
100
V
200V
57K/W
RRM
R
thJA
T
amb
=25°C
t /T=0.5
p
t /T=0.2
t /T=0.1
p
p
T
=70°C
T
amb
=45°C
amb
10
1
T
=100°C
amb
t /T=0.05
p
T
amb
=125°C
T
amb
=150°C
t /T=0.02
p
t /T=0.01
p
Single Pulse
–4
–3
–2
–1
0
0
1
10
10
10
10
10
10
10
– Repetitive Peak
I
FRM
94 9577
t – Pulse Length ( s )
p
Forward Current ( A )
Figure 7. Thermal Response
1000
100
10
V
R
1000V
10 s
57K/W
RRM
t
thJA
t /T=0.5
p
T
amb
=25°C
t /T=0.2
p
100°C
T
amb
=45°C
t /T=0.1
p
t /T=0.05
p
70°C
t /T=0.02
p
Single Pulse
T
amb
=125°C
t /T=0.01
p
1
–4
–3
–2
–1
0
0
1
10
10
10
10
10
10
10
– Repetitive Peak
I
FRM
94 9576
t – Pulse Length ( s )
p
Forward Current ( A )
Figure 8. Thermal Response
Dimensions in mm
3.6 max.
94 9538
Sintered Glass Case
SOD 57
Weight max. 0.5g
Cathode Identification
technical drawings
according to DIN
specifications
0.82 max.
26 min.
26 min.
4.2 max.
www.vishay.de • FaxBack +1-408-970-5600
Document Number 86052
Rev. 2, 24-Jun-98
4 (5)
BYX82...BYX86
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 86052
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
5 (5)
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