概述
规格参数
数据手册BZD27C100P-M 概述
Zener Diodes with Surge Current Specification 齐纳二极管与浪涌电流规格 稳压二极管
BZD27C100P-M 规格参数
| 生命周期： | Obsolete | 零件包装代码： | DO-219AB |
| 包装说明： | R-PDSO-F2 | 针数： | 2 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| HTS代码： | 8541.10.00.50 | 风险等级： | 5.64 |
| 配置： | SINGLE | 二极管元件材料： | SILICON |
| 二极管类型： | ZENER DIODE | JEDEC-95代码： | DO-219AB |
| JESD-30 代码： | R-PDSO-F2 | 元件数量： | 1 |
| 端子数量： | 2 | 最高工作温度： | 150 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 极性： | UNIDIRECTIONAL |
| 最大功率耗散： | 0.8 W | 认证状态： | Not Qualified |
| 标称参考电压： | 100 V | 表面贴装： | YES |
| 技术： | ZENER | 端子形式： | FLAT |
| 端子位置： | DUAL | 最大电压容差： | 6% |
| 工作测试电流： | 5 mA | Base Number Matches： | 1 |
BZD27C100P-M 数据手册
通过下载BZD27C100P-M数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载BZD27C3V6P-M to BZD27C200P-M
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Vishay Semiconductors
Zener Diodes with Surge Current Specification
FEATURES
• Sillicon planar Zener diodes
• Low profile surface-mount package
• Zener and surge current specification
• Low leakage current
• Excellent stability
• High temperature soldering: 260 °C/10 s at
terminals
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
• Halogen-free according to IEC 61249-2-21 definition
PARAMETER
VZ range nom.
Test current IZT
VZ specification
Int. construction
VALUE
3.6 to 200
5 to 100
UNIT
V
mA
Pulse current
Single
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
BZD27C3V6P-M to
BZD27C200P-M
BZD27C3V6P-M to
BZD27C200P-M-series-08
3000 per 7" reel (8mm tape)
15 000/box
BZD27C3V6P-M to
BZD27C200P-M
BZD27C3V6P-M to
BZD27C200P-M-series-18
10 000 per 13" reel (8 mm tape)
10 000/box
PACKAGE
MOLDING COMPOUND MOISTURE SENSITIVITY
SOLDERING
CONDITIONS
PACKAGE NAME
WEIGHT
15 mg
FLAMMABILITY RATING
LEVEL
MSL level 1
DO-219AB (SMF)
UL 94 V-0
260 °C/10 s at terminals
(according J-STD-020)
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
TL = 80 °C
SYMBOL
Ptot
VALUE
UNIT
mW
mW
W
2300
800
Power dissipation
TA = 25 °C (1)
Ptot
100 μs square pulse
PZSM
300
10/1000 μs waveform
(BZD27-C7V5P-M to BZD27-C100P-M)
10/1000 μs waveform
Non repetitive peak surge power
dissipation (2)
PRSM
150
W
PRSM
RthJL
100
30
W
(BZD27-C110P-M to BZD27-C200P-M)
Junction to lead
K/W
Mounted on epoxy-glass PCB with 3 mm x
Junction to ambient air
RthJA
180
K/W
3 mm Cu pads ( 40 μm thick)
Junction temperature
Tj
150
°C
°C
Storage temperature range
Tstg
- 55 to + 150
Notes
(1)
Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 μm thick)
TJ = 25 °C prior to surge
(2)
Rev. 1.2, 29-Nov-11
Document Number: 83307
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C3V6P-M to BZD27C200P-M
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Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
TEST
CURRENT
REVERSE
CURRENT
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT
RANGE (1)
MARKING
CODE
VZ at IZT1
V
IZT1
mA
IR at VR
ZZ at IZT1
VZ at IZT1
%/°C
PART NUMBER
μA
MAX.
100
50
25
10
5
V
MIN.
NOM. MAX.
TYP.
MAX.
MIN.
MAX.
- 0.04
- 0.04
- 0.02
0
BZD27C3V6P-M
BZD27C3V9P-M
BZD27C4V3P-M
BZD27C4V7P-M
BZD27C5V1P-M
BZD27C5V6P-M
BZD27C6V2P-M
BZD27C6V8P-M
BZD27C7V5P-M
BZD27C8V2P-M
BZD27C9V1P-M
BZD27C10P-M
BZD27C11P-M
BZD27C12P-M
BZD27C13P-M
BZD27C15P-M
BZD27C16P-M
BZD27C18P-M
BZD27C20P-M
BZD27C22P-M
BZD27C24P-M
BZD27C27P-M
BZD27C30P-M
BZD27C33P-M
BZD27C36P-M
BZD27C39P-M
BZD27C43P-M
BZD27C47P-M
BZD27C51P-M
BZD27C56P-M
BZD27C62P-M
BZD27C68P-M
BZD27C75P-M
BZD27C82P-M
BZD27C91P-M
BZD27C100P-M
BZD27C110P-M
BZD27C120P-M
BZD27C130P-M
BZD27C150P-M
BZD27C160P-M
BZD27C180P-M
BZD27C200P-M
N0
N1
N2
N3
N4
N5
N6
N7
N8
N9
O0
O1
O2
O3
O4
O5
O6
O7
O8
O9
P0
P1
P2
P3
P4
P5
P6
P7
P8
P9
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
Q8
Q9
R0
R1
R2
3.4
3.7
4
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
3.8
4.1
4.6
5
100
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
1
1
4
8
- 0.14
- 0.14
- 0.12
- 0.1
- 0.08
- 0.04
- 0.01
0
4
4
8
7
1
4.4
4.8
5.2
5.8
6.4
7
1
3
7
5.4
6
1
3
6
0.02
0.04
0.06
0.07
0.07
0.08
0.08
0.09
0.1
10
5
2
2
4
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
2
2
3
10
50
10
10
7
3
1
3
3
1
2
0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
3
1
2
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
5
2
4
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
2
4
11
4
4
7
12
3
4
7
0.1
13
2
5
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
200
250
250
300
300
350
400
500
0.1
15
1
5
0.1
16
1
6
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
18
1
6
20
1
6
22
1
6
24
1
7
27
1
7
30
1
8
31
33
35
1
8
34
36
38
1
21
21
24
24
25
25
25
25
30
30
60
60
80
80
110
130
150
180
200
37
39
41
1
40
43
46
1
44
47
50
1
48
51
54
1
52
56
60
1
58
62
66
1
64
68
72
1
70
75
79
1
77
82
87
1
85
91
96
1
94
100
110
120
130
150
160
180
200
106
116
127
141
156
171
191
212
5
1
104
114
124
138
153
168
188
5
1
5
1
5
1
5
1
5
1
5
1
5
1
Notes
•
•
(1)
Electrical characteristics when used as regulator diodes
Maximum VF = 1.2 V, at IF = 0.2 A
Pulse test: tp 5 ms
Rev. 1.2, 29-Nov-11
Document Number: 83307
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C3V6P-M to BZD27C200P-M
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
TEST
CURRENT
REVERSE
CURRENT
CLAMPING
VOLTAGE
TEMPERATURE
COEFFICIENT
MARKING
CODE
(1)
VZ at IZT1
IZT1
mA
IR at VR
VC at IRSM
V
VZ at IZT1
%/C
PART NUMBER
V
μA
V
A
MIN. NOM. MAX.
MAX.
MAX.
MIN.
0
MAX.
BZD27C7V5P-M
BZD27C8V2P-M
BZD27C9V1P-M
BZD27C10P-M
BZD27C11P-M
BZD27C12P-M
BZD27C13P-M
BZD27C15P-M
BZD27C16P-M
BZD27C18P-M
BZD27C20P-M
BZD27C22P-M
BZD27C24P-M
BZD27C27P-M
BZD27C30P-M
BZD27C33P-M
BZD27C36P-M
BZD27C39P-M
BZD27C43P-M
BZD27C47P-M
BZD27C51P-M
BZD27C56P-M
BZD27C62P-M
BZD27C68P-M
BZD27C75P-M
BZD27C82P-M
BZD27C91P-M
BZD27C100P-M
BZD27C110P-M
BZD27C120P-M
BZD27C130P-M
BZD27C150P-M
BZD27C160P-M
BZD27C180P-M
BZD27C200P-M
N8
N9
O0
O1
O2
O3
O4
O5
O6
O7
O8
O9
P0
P1
P2
P3
P4
P5
P6
P7
P8
P9
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
Q8
Q9
R0
R1
R2
7
7.5
8.2
9.1
10
7.9
8.7
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
1500
1200
100
20
5
6.2
6.8
7.5
8.2
9.1
10
11.3
12.3
13.3
14.8
15.7
17
13.3
12.2
11.3
10.1
9.6
0.07
0.08
0.08
0.09
0.1
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
11
12
5
8.8
0.1
13
5
11
18.9
20.9
22.9
25.6
28.4
31
7.9
0.1
15
5
12
7.2
0.1
16
5
13
6.6
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
18
5
15
5.9
20
5
16
5.3
22
5
18
4.8
24
5
20
33.8
38.1
42.2
46.2
50.1
54.1
60.7
65.5
70.8
78.6
86.5
94.4
103.5
114
4.4
27
5
22
3.9
30
5
24
3.6
31
33
35
5
27
3.2
34
36
38
5
30
3
37
39
41
5
33
2.8
40
43
46
5
36
2.5
44
47
50
5
39
2.3
48
51
54
5
43
2.1
52
56
60
5
47
1.9
58
62
66
5
51
1.7
64
68
72
5
56
1.6
70
75
79
5
62
1.5
77
82
87
5
68
1.3
85
91
96
5
75
126
1.2
94
100
110
120
130
150
160
180
200
106
116
127
141
156
171
191
212
5
5
82
139
1.1
104
114
124
138
153
168
188
5
5
91
139
0.72
0.65
0.59
0.53
0.48
0.43
0.39
5
5
100
110
120
130
150
160
152
5
5
169
5
5
187
5
5
205
5
5
229
5
5
254
Notes
•
(1)
Electrical characteristics when used as protection diodes
Non-repetitive peak reverse current in accordance with ”IEC 60-1, section 8” (10/1000 μs pulse); see fig. 5.
Rev. 1.2, 29-Nov-11
Document Number: 83307
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C3V6P-M to BZD27C200P-M
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10
160
140
120
100
80
Max. VF
Typ. VF
1
60
40
20
0.1
0.6
0
0.8
1.0
1.2
1.4
1.6
0
50
100
150
200
17411
17414
VF - Forward Voltage (V)
VZnom - Zener Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 4 - Maximum Pulse Power Dissipation vs. Zener Voltage
10 000
IRSM
(%)
C5V1P
C18P
C6V8P
C12P
t1 = 10 µs
t2 = 1000 µs
100
90
1000
100
50
C27P
C51P
10
C200P
0.5
t
10
t1
0
1.0
1.5
2.0
2.5
3.0
t2
17415
17412
VR - Reverse Voltage (V)
Fig. 2 - Typ. Diode Capacitance vs. Reverse Voltage
Fig. 5 - Non-Repetitive Peak Reverse Current Pulse Definition
3.0
Tie point temperature
2.5
2.0
1.5
1.0
0.5
0
Ambient temperature
0
25
50
75
100 125 150
17413
Tamb - Ambient Temperature (°C)
Fig. 3 - Power Dissipation vs. Ambient Temperature
Rev. 1.2, 29-Nov-11
Document Number: 83307
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C3V6P-M to BZD27C200P-M
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): DO219-AB (SMF)
0.85 (0.033)
0.35 (0.014)
Detail Z
enlarged
1.08 (0.043)
0.88 (0.035)
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
Foot print recommendation:
1.3 (0.051)
1.3 (0.051)
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
17247
2.9 (0.114)
Rev. 1.2, 29-Nov-11
Document Number: 83307
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C3V6P-M to BZD27C200P-M
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Vishay Semiconductors
Blistertape Dimensions for SMF in millimeters
PS
Document-No.: S8-V-3717.02-001 (3)
18513
Rev. 1.2, 29-Nov-11
Document Number: 83307
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
BZD27C100P-M 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| BZD27C100P-M-08 | VISHAY | DIODE 100 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, HALOGEN FREE AND ROHS COMPLIANT, SMF, 2 PIN, Voltage Regulator Diode | 获取价格 |
|
| BZD27C100P-M08 | VISHAY | DIODE 100 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, HALOGEN FREE AND ROHS COMPLIANT, SMF, 2 PIN, Voltage Regulator Diode | 获取价格 |
|
| BZD27C100P-M18 | VISHAY | DIODE 100 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, HALOGEN FREE AND ROHS COMPLIANT, SMF, 2 PIN, Voltage Regulator Diode | 获取价格 |
|
| BZD27C100P-M3-18 | VISHAY | Zener Diode, 100V V(Z), 5%, 2.3W, | 获取价格 |
|
| BZD27C100PGS08 | VISHAY | DIODE 100 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, ROHS COMPLIANT, SMF, 2 PIN, Voltage Regulator Diode | 获取价格 |
|
| BZD27C100PGS18 | VISHAY | DIODE 100 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, ROHS COMPLIANT, SMF, 2 PIN, Voltage Regulator Diode | 获取价格 |
|
| BZD27C100PV | RECTRON | Package / Case : SOD-123F(L)-1;Mounting Style : SMT/SMD;Zener Voltage Vz (V) : 100 V;Zener Voltage | 获取价格 |
|
| BZD27C100T/R | PHILIPS | Zener Diode, 100V V(Z), 5%, 2.3W, | 获取价格 |
|
| BZD27C100TRL | NXP | DIODE 100 V, 2.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, Voltage Regulator Diode | 获取价格 |
|
| BZD27C10P | VISHAY | Zener Diodes with Surge Current Specification | 获取价格 |
|
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