BZD27C120P-M3-18 [VISHAY]
Zener Diode, 120V V(Z), 5%, 2.3W,;
| 型号： | BZD27C120P-M3-18 |
| 厂家： | 
VISHAY |
| 描述： | Zener Diode, 120V V(Z), 5%, 2.3W, 测试 二极管 |
| 文件： | 总7页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZD27-M Series
Vishay Semiconductors
www.vishay.com
Zener Diodes with Surge Current Specification
FEATURES
Available
• Sillicon planar Zener diodes
• Low profile surface-mount package
• Zener and surge current specification
• Low leakage current
• Excellent stability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
17249
• Meets JESD 201 class 2 whisker test
• ESD capability according to AEC-Q101:
human body model: > 8 kV
machine model: > 800 V
PRIMARY CHARACTERISTICS
PARAMETER
VZ range nom.
Test current IZT
VBR
VALUE
3.6 to 200
5 to 100
7 to 188
6.2 to 160
150
UNIT
V
• Wave and reflow solderable
• AEC-Q101 qualified
mA
V
• Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
VWM
V
PPPM
W
• Base P/N-HM3 - halogen-free, RoHS-compliant, and
automotive grade (available on request)
TJ max.
175
°C
VZ specification
Int. construction
Polarity
Pulse current
Single
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Uni-directional
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL
3000 per 7" reel (8mm tape)
10 000 per 13" reel (8 mm tape)
MINIMUM ORDER QUANTITY
30 000/box
BZD27C3V6P-M3-08 to BZD27C200P-M3-08
BZD27C3V6P-M3-18 to BZD27C200P-M3-18
BZD27-M Series
50 000/box
PACKAGE
PACKAGE
NAME
MOLDING COMPOUND MOISTURESENSITIVITY WHISKER TEST
WEIGHT
SOLDERING CONDITIONS
FLAMMABILITY RATING
LEVEL
ACC. JESD 201
MSL level 1
(according J-STD-020)
DO-219AB (SMF) 15 mg
UL 94 V-0
Class 2
Peak temperature max. 260 °C
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Ptot
VALUE
2300
800
UNIT
mW
mW
W
TL = 105 °C
Power dissipation
T
A = 30 °C (1)
Ptot
100 μs square pulse
10/1000 μs waveform
PZSM
PRSM
RthJL
300
Non repetitive peak surge power dissipation (2)
150
W
Junction to lead
30
K/W
Mounted on epoxy-glass PCB with
3 mm x 3 mm Cu pads ( 40 μm thick)
Junction to ambient air
RthJA
180
K/W
Junction temperature
Tj
175
°C
°C
°C
Storage temperature range
Operating temperature range
Tstg
Top
-65 to +175
-65 to +175
Notes
(1)
Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 μm thick)
TJ = 25 °C prior to surge
(2)
Rev. 1.6.,18-Mar-15
Document Number: 85155
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27-M Series
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
TEST
CURRENT
REVERSE
CURRENT
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT
RANGE (1)
MARKING
CODE
VZ at IZT1
V
IZT1
mA
IR at VR
ZZ at IZT1
VZ at IZT1
%/°C
PART NUMBER
μA
MAX.
100
50
25
10
5
V
MIN.
NOM. MAX.
TYP.
MAX.
MIN.
MAX.
-0.04
-0.04
-0.02
0
BZD27C3V6P-M
BZD27C3V9P-M
BZD27C4V3P-M
BZD27C4V7P-M
BZD27C5V1P-M
BZD27C5V6P-M
BZD27C6V2P-M
BZD27C6V8P-M
BZD27C7V5P-M
BZD27C8V2P-M
BZD27C9V1P-M
BZD27C10P-M
BZD27C11P-M
BZD27C12P-M
BZD27C13P-M
BZD27C15P-M
BZD27C16P-M
BZD27C18P-M
BZD27C20P-M
BZD27C22P-M
BZD27C24P-M
BZD27C27P-M
BZD27C30P-M
BZD27C33P-M
BZD27C36P-M
BZD27C39P-M
BZD27C43P-M
BZD27C47P-M
BZD27C51P-M
BZD27C56P-M
BZD27C62P-M
BZD27C68P-M
BZD27C75P-M
BZD27C82P-M
BZD27C91P-M
BZD27C100P-M
BZD27C110P-M
BZD27C120P-M
BZD27C130P-M
BZD27C150P-M
BZD27C160P-M
BZD27C180P-M
BZD27C200P-M
N0
N1
N2
N3
N4
N5
N6
N7
N8
N9
O0
O1
O2
O3
O4
O5
O6
O7
O8
O9
P0
P1
P2
P3
P4
P5
P6
P7
P8
P9
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
Q8
Q9
R0
R1
R2
3.4
3.7
4
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
3.8
4.1
4.6
5
100
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
1
1
4
8
-0.14
-0.14
-0.12
-0.1
-0.08
-0.04
-0.01
0
4
4
8
7
1
4.4
4.8
5.2
5.8
6.4
7
1
3
7
5.4
6
1
3
6
0.02
0.04
0.06
0.07
0.07
0.08
0.08
0.09
0.1
10
5
2
2
4
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
2
2
3
10
50
10
10
7
3
1
3
3
1
2
0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
3
1
2
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
5
2
4
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
2
4
11
4
4
7
12
3
4
7
0.1
13
2
5
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
200
250
250
300
300
350
400
500
0.1
15
1
5
0.1
16
1
6
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
18
1
6
20
1
6
22
1
6
24
1
7
27
1
7
30
1
8
31
33
35
1
8
34
36
38
1
21
21
24
24
25
25
25
25
30
30
60
60
80
80
110
130
150
180
200
37
39
41
1
40
43
46
1
44
47
50
1
48
51
54
1
52
56
60
1
58
62
66
1
64
68
72
1
70
75
79
1
77
82
87
1
85
91
96
1
94
100
110
120
130
150
160
180
200
106
116
127
141
156
171
191
212
5
1
104
114
124
138
153
168
188
5
1
5
1
5
1
5
1
5
1
5
1
5
1
Notes
•
•
(1)
Electrical characteristics when used as regulator diodes
Maximum VF = 1.2 V, at IF = 0.2 A
Pulse test: tp 5 ms
Rev. 1.6.,18-Mar-15
Document Number: 85155
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27-M Series
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
TEST
CURRENT
REVERSE
CURRENT
CLAMPING
VOLTAGE
TEMPERATURE
COEFFICIENT
MARKING
CODE
(1)
VZ at IZT1
IZT1
mA
IR at VR
VC at IRSM
VZ at IZT1
%/C
PART NUMBER
V
μA
V
V
A
MIN. NOM. MAX.
MAX.
MAX.
11.3
12.3
13.3
14.8
15.7
17
MIN.
0
MAX.
BZD27C7V5P-M
BZD27C8V2P-M
BZD27C9V1P-M
BZD27C10P-M
BZD27C11P-M
BZD27C12P-M
BZD27C13P-M
BZD27C15P-M
BZD27C16P-M
BZD27C18P-M
BZD27C20P-M
BZD27C22P-M
BZD27C24P-M
BZD27C27P-M
BZD27C30P-M
BZD27C33P-M
BZD27C36P-M
BZD27C39P-M
BZD27C43P-M
BZD27C47P-M
BZD27C51P-M
BZD27C56P-M
BZD27C62P-M
BZD27C68P-M
BZD27C75P-M
BZD27C82P-M
BZD27C91P-M
BZD27C100P-M
BZD27C110P-M
BZD27C120P-M
BZD27C130P-M
BZD27C150P-M
BZD27C160P-M
BZD27C180P-M
BZD27C200P-M
N8
N9
O0
O1
O2
O3
O4
O5
O6
O7
O8
O9
P0
P1
P2
P3
P4
P5
P6
P7
P8
P9
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
Q8
Q9
R0
R1
R2
7
7.5
8.2
9.1
10
7.9
8.7
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
1500
1200
100
20
5
6.2
6.8
7.5
8.2
9.1
10
13.3
12.2
11.3
10.1
9.6
8.8
7.9
7.2
6.6
5.9
5.3
4.8
4.4
3.9
3.6
3.2
3
0.07
0.08
0.08
0.09
0.1
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
11
12
5
0.1
13
5
11
18.9
20.9
22.9
25.6
28.4
31
0.1
15
5
12
0.1
16
5
13
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
18
5
15
20
5
16
22
5
18
24
5
20
33.8
38.1
42.2
46.2
50.1
54.1
60.7
65.5
70.8
78.6
86.5
94.4
103.5
114
27
5
22
30
5
24
31
33
35
5
27
34
36
38
5
30
37
39
41
5
33
2.8
2.5
2.3
2.1
1.9
1.7
1.6
1.5
1.3
1.2
1.1
1
40
43
46
5
36
44
47
50
5
39
48
51
54
5
43
52
56
60
5
47
58
62
66
5
51
64
68
72
5
56
70
75
79
5
62
77
82
87
5
68
85
91
96
5
75
126
94
100
110
120
130
150
160
180
200
106
116
127
141
156
171
191
212
5
5
82
139
104
114
124
138
153
168
188
5
5
91
150
5
5
100
110
120
130
150
160
167
0.9
0.81
0.73
0.67
0.6
0.54
5
5
185
5
5
205
5
5
224
5
5
252
5
5
278
Notes
•
(1)
Electrical characteristics when used as protection diodes
Non-repetitive peak reverse current in accordance with ”IEC 60-1, section 8” (10/1000 μs pulse); see fig. 4
Rev. 1.6.,18-Mar-15
Document Number: 85155
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27-M Series
Vishay Semiconductors
www.vishay.com
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10
IRSM
(%)
t1 = 10 µs
Max. VF
t2 = 1000 µs
100
Typ. VF
90
1
50
10
t
0.1
t1
0.6
0.8
1.0
1.2
1.4
1.6
t2
17415
17411
VF - Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 4 - Non-Repetitive Peak Reverse Current Pulse Definition
10 000
C5V1P
C18P
C6V8P
C12P
1000
100
C27P
C51P
C200P
0.5
10
0
1.0
1.5
2.0
2.5
3.0
17412
VR - Reverse Voltage (V)
Fig. 2 - Typ. Diode Capacitance vs. Reverse Voltage
3.0
RthJL = 30K/W
2.5
2.0
1.5
1.0
0.5
0
R
thJA = 180K/W
0
25 50 75 100 125 150 175
22774
Tamb - Ambient Temperature (°C)
Fig. 3 - Power Dissipation vs. Ambient Temperature
Rev. 1.6.,18-Mar-15
Document Number: 85155
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27-M Series
Vishay Semiconductors
www.vishay.com
PACKAGE DIMENSIONS in millimeters (inches): DO219-AB (SMF)
0.85 (0.033)
0.35 (0.014)
Detail Z
enlarged
1.08 (0.043)
0.88 (0.035)
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
Foot print recommendation:
1.3 (0.051)
1.3 (0.051)
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
17247
2.9 (0.114)
Rev. 1.6.,18-Mar-15
Document Number: 85155
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27-M Series
Vishay Semiconductors
www.vishay.com
BLISTERTAPE DIMENSIONS FOR SMF in millimeters
PS
Document-No.: S8-V-3717.02-001 (3)
18513
Rev. 1.6.,18-Mar-15
Document Number: 85155
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
Document Number: 91000
1
相关型号：
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DIODE 120.5 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, ROHS COMPLIANT, SMF, 2 PIN, Voltage Regulator Diode
VISHAY
BZD27C120PGS18
DIODE 120.5 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, ROHS COMPLIANT, SMF, 2 PIN, Voltage Regulator Diode
VISHAY
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