BZD27C33P-E3-18 [VISHAY]
Zener Diode, 33V V(Z), 6.06%, 0.8W, Silicon, Unidirectional, DO-219AB, SMF, 2 PIN;
| 型号： | BZD27C33P-E3-18 |
| 厂家： | 
VISHAY |
| 描述： | Zener Diode, 33V V(Z), 6.06%, 0.8W, Silicon, Unidirectional, DO-219AB, SMF, 2 PIN 测试 光电二极管 |
| 文件： | 总8页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZD27C Series
Vishay Semiconductors
www.vishay.com
Zener Diodes with Surge Current Specification
FEATURES
Available
• Sillicon planar Zener diodes
• Low profile surface-mount package
• Zener and surge current specification
• Low leakage current
• Excellent stability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
17249
• Meets JESD 201 class 2 whisker test
PRIMARY CHARACTERISTICS
• ESD capability according to AEC-Q101:
human body model: > 8 kV
machine model: > 800 V
PARAMETER
VALUE
UNIT
VZ range nom.
Test current IZT
VBR
3.6 to 200
5 to 100
7 to 188
6.2 to 160
150
V
mA
V
• Wave and reflow solderable
• AEC-Q101 qualified available
VWM
V
• Base P/N-E3 - RoHS-compliant, and commercial grade
PPPM
W
°C
•
Base P/N-HE3 - RoHS-compliant, and AEC-Q101 qualified
TJ max.
175
VZ specification
Circuit configuration
Polarity
Pulse current
Single
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Uni-directional
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
BZD27C3V6P-E3-08 to BZD27C200P-E3-08
BZD27C3V6P-HE3-08 to BZD27C200P-HE3-08
BZD27C3V6P-E3-18 to BZD27C200P-E3-18
BZD27C3V6P-HE3-18 to BZD27C200P-HE3-18
3000 per 7" reel (8 mm tape)
30 000/box
BZD27C Series
10 000 per 13" reel (8 mm tape)
50 000/box
PACKAGE
MOLDING COMPOUND MOISTURESENSITIVITY WHISKER TEST
PACKAGE NAME WEIGHT
SOLDERING CONDITIONS
FLAMMABILITY RATING
LEVEL
ACC. JESD 201
MSL level 1
(according J-STD-020)
SMF (DO-219AB)
15 mg
UL 94 V-0
class 2
Peak temperature max. 260 °C
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
TL = 105 °C
TA = 30 °C (1)
Ptot
Ptot
2300
800
300
150
30
mW
mW
W
Power dissipation
100 μs square pulse
10/1000 μs waveform
PZSM
PRSM
RthJL
Non repetitive peak surge power dissipation (2)
Junction to lead
W
K/W
Mounted on epoxy-glass PCB with
3 mm x 3 mm Cu pads
( 40 μm thick)
Junction to ambient air
RthJA
180
K/W
Junction temperature
Tj
175
°C
°C
°C
Storage temperature range
Operating temperature range
Tstg
Top
-65 to +175
-65 to +175
Notes
(1)
Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 μm thick)
TJ = 25 °C prior to surge
(2)
Rev. 1.5, 10-Oct-17
Document Number: 85153
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C Series
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
TEST
CURRENT
REVERSE
CURRENT
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT
RANGE (1)
MARKING
CODE
VZ at IZT1
V
IZT1
mA
IR at VR
ZZ at IZT1
VZ at IZT1
%/°C
PART NUMBER
μA
MAX.
100
50
25
10
5
V
MIN.
NOM. MAX.
TYP.
4
MAX.
8
MIN.
-0.14
-0.14
-0.12
-0.1
-0.08
-0.04
-0.01
0
MAX.
BZD27C3V6P
BZD27C3V9P
BZD27C4V3P
BZD27C4V7P
BZD27C5V1P
BZD27C5V6P
BZD27C6V2P
BZD27C6V8P
BZD27C7V5P
BZD27C8V2P
BZD27C9V1P
BZD27C10P
BZD27C11P
BZD27C12P
BZD27C13P
BZD27C15P
BZD27C16P
BZD27C18P
BZD27C20P
BZD27C22P
BZD27C24P
BZD27C27P
BZD27C30P
BZD27C33P
BZD27C36P
BZD27C39P
BZD27C43P
BZD27C47P
BZD27C51P
BZD27C56P
BZD27C62P
BZD27C68P
BZD27C75P
BZD27C82P
BZD27C91P
BZD27C100P
BZD27C110P
BZD27C120P
BZD27C130P
BZD27C150P
BZD27C160P
BZD27C180P
BZD27C200P
D0
D1
D2
D3
D4
D5
D6
D7
D8
D9
E0
E1
E2
E3
E4
E5
E6
E7
E8
E9
F0
F1
F2
F3
F4
F5
F6
F7
F8
F9
G0
G1
G2
G3
G4
G5
G6
G7
G8
G9
H0
H1
H2
3.4
3.7
4
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
3.8
4.1
4.6
5
100
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
1
1
-0.04
-0.04
-0.02
0
4
8
1
4
7
4.4
4.8
5.2
5.8
6.4
7
1
3
7
5.4
6
1
3
6
0.02
0.04
0.06
0.07
0.07
0.08
0.08
0.09
0.1
10
5
2
2
4
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
2
2
3
10
50
10
10
7
3
1
3
3
1
2
0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
3
1
2
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
5
2
4
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
2
4
11
4
4
7
12
3
4
7
0.1
13
2
5
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
200
250
250
300
300
350
400
500
0.1
15
1
5
0.1
16
1
6
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
18
1
6
20
1
6
22
1
6
24
1
7
27
1
7
30
1
8
31
33
35
1
8
34
36
38
1
21
21
24
24
25
25
25
25
30
30
60
60
80
80
110
130
150
180
200
37
39
41
1
40
43
46
1
44
47
50
1
48
51
54
1
52
56
60
1
58
62
66
1
64
68
72
1
70
75
79
1
77
82
87
1
85
91
96
1
94
100
110
120
130
150
160
180
200
106
116
127
141
156
171
191
212
5
1
104
114
124
138
153
168
188
5
1
5
1
5
1
5
1
5
1
5
1
5
1
Notes
•
•
(1)
Maximum VF = 1.2 V, at IF = 0.2 A
Electrical characteristics when used as voltage regulator diodes
Pulse test: tp 5 ms
Rev. 1.5, 10-Oct-17
Document Number: 85153
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C Series
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
TEST
CURRENT
REVERSE
CURRENT
CLAMPING
VOLTAGE
TEMPERATURE
COEFFICIENT
MARKING
CODE
(1)
VZ at IZT1
V
IZT1
mA
IR at VR
VC at IRSM
VZ at IZT1
%/C
PART NUMBER
μA
V
V
A
MIN.
NOM. MAX.
MAX.
MAX.
11.3
12.3
13.3
14.8
15.7
17
MIN.
0
MAX.
0.07
0.08
0.08
0.09
0.1
BZD27C7V5P
BZD27C8V2P
BZD27C9V1P
BZD27C10P
BZD27C11P
BZD27C12P
BZD27C13P
BZD27C15P
BZD27C16P
BZD27C18P
BZD27C20P
BZD27C22P
BZD27C24P
BZD27C27P
BZD27C30P
BZD27C33P
BZD27C36P
BZD27C39P
BZD27C43P
BZD27C47P
BZD27C51P
BZD27C56P
BZD27C62P
BZD27C68P
BZD27C75P
BZD27C82P
BZD27C91P
BZD27C100P
BZD27C110P
BZD27C120P
BZD27C130P
BZD27C150P
BZD27C160P
BZD27C180P
BZD27C200P
D8
D9
E0
E1
E2
E3
E4
E5
E6
E7
E8
E9
F0
F1
F2
F3
F4
F5
F6
F7
F8
F9
G0
G1
G2
G3
G4
G5
G6
G7
G8
G9
H0
H1
H2
7
7.5
8.2
9.1
10
7.9
8.7
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
1500
1200
100
20
5
6.2
6.8
7.5
8.2
9.1
10
13.3
12.2
11.3
10.1
9.6
8.8
7.9
7.2
6.6
5.9
5.3
4.8
4.4
3.9
3.6
3.2
3
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
11
12
5
0.1
13
5
11
18.9
20.9
22.9
25.6
28.4
31
0.1
15
5
12
0.1
16
5
13
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
18
5
15
20
5
16
22
5
18
24
5
20
33.8
38.1
42.2
46.2
50.1
54.1
60.7
65.5
70.8
78.6
86.5
94.4
103.5
114
27
5
22
30
5
24
31
33
35
5
27
34
36
38
5
30
37
39
41
5
33
2.8
2.5
2.3
2.1
1.9
1.7
1.6
1.5
1.3
1.2
1.1
1
40
43
46
5
36
44
47
50
5
39
48
51
54
5
43
52
56
60
5
47
58
62
66
5
51
64
68
72
5
56
70
75
79
5
62
77
82
87
5
68
85
91
96
5
75
126
94
100
110
120
130
150
160
180
200
106
116
127
141
156
171
191
212
5
5
82
139
104
114
124
138
153
168
188
5
5
91
150
5
5
100
110
120
130
150
160
167
0.9
0.81
0.73
0.67
0.6
0.54
5
5
185
5
5
205
5
5
224
5
5
252
5
5
278
Notes
•
•
(1)
Maximum VF = 1.2 V, at IF = 0.2 A
Electrical characteristics when used as protection diodes
Non-repetitive peak reverse current in accordance with “IEC 60-1, section 8” (10/1000 μs pulse); see fig. 4
Rev. 1.5, 10-Oct-17
Document Number: 85153
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C Series
Vishay Semiconductors
www.vishay.com
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10
IRSM
(%)
t1 = 10 µs
Max. VF
t2 = 1000 µs
100
Typ. VF
90
1
50
10
t
0.1
t1
0.6
0.8
1.0
1.2
1.4
1.6
t2
17415
17411
VF - Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 4 - Non-Repetitive Peak Reverse Current Pulse Definition
14
10 000
Chart valid for TJ = 175 °C; TA = 25 °C, and a duty
cycle of D = 0.5
Duty cycle D
12
C5V1P
C18P
C6V8P
C12P
tp
T
tp
D =
T
10
8
T
J max. - TA
1000
100
PZSM
=
D x (Rth - Zth (tp)) + Zth (tp)
6
P (RthJL
)
Typ. PZSM = f (tp)
4
C27P
C51P
2
P (RthJA
)
C200P
0.5
0
10
0
1.0
1.5
2.0
2.5
3.0
0.001 0.01
0.1
1
10
100
1000
17412
VR - Reverse Voltage (V)
22987
tp Pulse Width (s)
Fig. 2 - Typ. Diode Capacitance vs. Reverse Voltage
Fig. 5 - Typical Repetitive Peak Surge Power
1000
3.0
Typ. Zth = f (tp)
RthJL = 30K/W
2.5
100
10
2.0
1.5
RthJA 3 mm x 3 mm pad
RthJL
1.0
0.5
0
R
thJA = 180K/W
1
0
25 50 75 100 125 150 175
0.001 0.01
0.1
1
10
100
1000
22774
Tamb - Ambient Temperature (°C)
22988
tp Pulse Width (s)
Fig. 3 - Power Dissipation vs. Ambient Temperature
Fig. 6 - Typical Thermal Impedance vs. Time
Rev. 1.5, 10-Oct-17
Document Number: 85153
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C Series
Vishay Semiconductors
www.vishay.com
PACKAGE DIMENSIONS in millimeters (inches): SMF (DO219-AB)
0.85 (0.033)
0.35 (0.014)
Detail Z
enlarged
1.08 (0.043)
0.88 (0.035)
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
Foot print recommendation:
1.3 (0.051)
1.3 (0.051)
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.: S8-V-3915.01-001 (4)
17247
2.9 (0.114)
Rev. 1.5, 10-Oct-17
Document Number: 85153
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C Series
Vishay Semiconductors
www.vishay.com
BLISTERTAPE DIMENSIONS FOR SMF in millimeters
PS
Document-No.: S8-V-3717.02-001 (3)
18513
Rev. 1.5, 10-Oct-17
Document Number: 85153
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C Series
Vishay Semiconductors
www.vishay.com
ORIENTATION IN CARRIER TAPE - SMF
Unreeling direction
SMF
cathode
Top view
Document no.: S8-V-3717.02-003 (4)
Created - Date: 09. Feb. 2010
22670
Rev. 1.5, 10-Oct-17
Document Number: 85153
7
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 08-Feb-17
Document Number: 91000
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