BZD27C4V3P-G1 [VISHAY]
DIODE 4.3 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, PLASTIC, SMF, 2 PIN, Voltage Regulator Diode;
| 型号： | BZD27C4V3P-G1 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 4.3 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, PLASTIC, SMF, 2 PIN, Voltage Regulator Diode |
| 文件： | 总6页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZD27C3V6P to BZD27C200P
VISHAY
Vishay Semiconductors
Voltage Regulator Diodes
Features
• Sillicon Planar Zener Diodes
• Low profile surface-mount package
• Zener and surge current specification
• Low leakage current
• Excellent stability
• High temperature soldering:
260 °C/10 sec. at terminals
Mechanical Data
Case: JEDEC DO-219AB (SMF®) Plastic Case
Packaging codes/options:
G1/ 10 K per 13 " reel, (8 mm tape), 50 K/box
G2/ 3 K per 7 " reel, (8 mm tape), 30 K/box
Weight: approx. 10 mg
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
Parameter
amb
Test condition
Symbol
Value
2.3
Unit
W
Power dissipation
T = 80 °C
P
L
tot
tot
1)
T = 25 °C
P
W
W
A
0.8
2)
Non-repetitive peak pulse power
dissipation
P
P
300
ZSM
100 µs square pulse
10/1000 µs waveform (BZD27-
C7V5P to BZD27-C100P)
150
W
W
RSM
2)
10/1000 µs waveform (BZD27-
C110P to BZD27-C200P)
P
100
RSM
2)
1)
Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)
2)
T = 25 °C prior to surge
J
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
180
Unit
K/W
1)
R
R
Thermal resistance junction to ambient air
Thermal resistance junction to lead
θ JA
30
150
K/W
°C
θ JL
Maximum junction temperature
Storage temperature range
T
j
T
- 55 to + 150
°C
S
1)
Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Min
Typ.
Max
1.2
Unit
V
Forward voltage
I = 0.2 A
V
F
F
Document Number 85810
Rev. 4, 16-Sep-03
www.vishay.com
1
BZD27C3V6P to BZD27C200P
Vishay Semiconductors
VISHAY
Electrical Characteristics
When used as voltage regulator diodes (T = 25 °C unless otherwise noted)
J
1)
Partnumber
Marking
Code
Differential
Resistance
Temperature
Coefficient
Test
Current
Reverse Current at
Reverse Voltage
Working Voltage
V
@ I
V
r
@ I
α
@ I
I
I
V
R
Z
ZT
dif
Z
Z
Z
ZT
R
Ω
%/°C
mA
µA
max
100
50
25
10
5
V
min
max
typ
max
8
min
-0.14
-0.14
-0.12
-0.1
max
BZD27C3V6P
BZD27C3V9P
BZD27C4V3P
BZD27C4V7P
BZD27C5V1P
BZD27C5V6P
BZD27C6V2P
BZD27C6V8P
BZD27C7V5P
BZD27C8V2P
BZD27C9V1P
BZD27C10P
BZD27C11P
BZD27C12P
BZD27C13P
BZD27C15P
BZD27C16P
BZD27C18P
BZD27C20P
BZD27C22P
BZD27C24P
BZD27C27P
BZD27C30P
BZD27C33P
BZD27C36P
BZD27C39P
BZD27C43P
BZD27C47P
BZD27C51P
BZD27C56P
BZD27C62P
BZD27C68P
BZD27C75P
BZD27C82P
BZD27C91P
BZD27C100P
BZD27C110P
BZD27C120P
BZD27C130P
BZD27C150P
BZD27C160P
BZD27C180P
BZD27C200P
D0
D1
D2
D3
D4
D5
D6
D7
D8
D9
E0
E1
E2
E3
E4
E5
E6
E7
E8
E9
F0
F1
F2
F3
F4
F5
F6
F7
F8
F9
G0
G1
G2
G3
G4
G5
G6
G7
G8
G9
H0
H1
H2
3.4
3.7
4
3.8
4.1
4.6
5
4
4
-0.04
-0.04
-0.02
0
100
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
1
1
8
4
7
1
4.4
4.8
5.2
5.8
6.4
7
3
7
1
5.4
6
3
6
-0.08
-0.04
-0.01
0
0.02
0.04
0.06
0.07
0.07
0.08
0.08
0.09
0.1
1
2
4
10
5
2
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
2
3
2
1
3
10
50
10
10
7
3
1
2
0
3
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
1
2
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
3
2
4
5
2
4
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
4
7
4
4
7
0.1
3
5
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
200
250
250
300
300
350
400
500
0.1
2
5
0.1
1
6
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
1
6
1
6
1
6
1
7
1
7
1
8
1
31
35
8
1
34
38
21
21
24
24
25
25
25
25
30
30
60
60
80
80
110
130
150
180
200
1
37
41
1
40
46
1
44
50
1
48
54
1
52
60
1
58
66
1
64
72
1
70
79
1
77
87
1
85
96
1
94
106
116
127
141
156
171
191
212
5
1
104
114
124
138
153
168
188
5
1
5
1
5
1
5
1
5
1
5
1
5
1
1)
Pulse test: tp ≤ 5 ms.
www.vishay.com
2
Document Number 85810
Rev. 4, 16-Sep-03
BZD27C3V6P to BZD27C200P
VISHAY
Vishay Semiconductors
Electrical Characteristics
When used as protection diodes (T = 25 °C unless otherwise noted)
J
Partnumber
Rev.
Breakdown
Voltage
Test
Current
Temperature Coefficient
Clamping Voltage
Reverse Current at
Stand-Off Voltage
1)
V
at
I
α
@ I
V
I
at V
WM
(BR)R
test
Z
test
C
at I
R
RSM
I
test
V
mA
%/°C
V
A
µA
max
1500
1200
100
20
5
V
min
7
min
0
max
0.07
0.08
0.08
0.09
0.1
max
11.3
12.3
13.3
14.8
15.7
17
BZD27C7V5P
BZD27C8V2P
BZD27C9V1P
BZD27C10P
BZD27C11P
BZD27C12P
BZD27C13P
BZD27C15P
BZD27C16P
BZD27C18P
BZD27C20P
BZD27C22P
BZD27C24P
BZD27C27P
BZD27C30P
BZD27C33P
BZD27C36P
BZD27C39P
BZD27C43P
BZD27C47P
BZD27C51P
BZD27C56P
BZD27C62P
BZD27C68P
BZD27C75P
BZD27C82P
BZD27C91P
BZD27C100P
BZD27C110P
BZD27C120P
BZD27C130P
BZD27C150P
BZD27C160P
BZD27C180P
BZD27C200P
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
13.3
12.2
11.3
10.1
9.6
6.2
6.8
7.5
8.2
9.1
10
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.1
8.8
5
0.1
18.9
20.9
22.9
25.6
28.4
31
7.9
5
11
0.1
7.2
5
12
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
6.6
5
13
5.9
5
15
5.3
5
16
4.8
5
18
33.8
38.1
42.2
46.2
50.1
54.1
60.7
65.5
70.8
78.6
86.5
94.4
103.5
114
4.4
5
20
3.9
5
22
3.6
5
24
31
3.2
5
27
34
3
5
30
37
2.8
5
33
40
2.5
5
36
44
2.3
5
39
48
2.1
5
43
52
1.9
5
47
58
1.7
5
51
64
1.6
5
56
70
1.5
5
62
77
1.3
5
68
85
126
1.2
5
75
94
5
139
1.1
5
82
104
114
124
138
153
168
188
5
139
0.72
0.65
0.59
0.53
0.48
0.43
0.39
5
91
5
152
5
100
110
120
130
150
160
5
169
5
5
187
5
5
205
5
5
229
5
5
254
5
1)
Non-repetitive peak reverse current in accordance with "IEC 60-1, Section 8" (10/1000 µs pulse); see Fig. 5.
Document Number 85810
Rev. 4, 16-Sep-03
www.vishay.com
3
BZD27C3V6P to BZD27C200P
Vishay Semiconductors
VISHAY
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
10.00
1.00
0.10
160
140
120
100
80
Typ. V
Max. V
F
F
60
40
20
0
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
0
25 50 75 100 125 150 175 200
– Zener Voltage ( V )
17411
17414
V
F
– Forward Voltage ( V )
V
Znom
Figure 1. Forward Current vs. Forward Voltage
Figure 4. Maximum Pulse Power Dissipation vs. Zener Voltage
10000
I
RSM
C5V1P
C6V8P
C12P
C18P
(%)
100
90
t
t
=
=
10 µs
1000 µ s
1
1000
100
10
2
50
C27P
1.0
C51P
10
C200P
0.5
t
t
1
0.0
1.5
2.0
2.5
3.0
t
2
V
R
– Reverse Voltage (V)
17415
17412
Figure 2. Typ. Diode Capacitance vs. Reverse Voltage
Figure 5. Non-Repetitive Peak Reverse Current Pulse Definition
3.0
tie point temperature
2.5
2.0
1.5
ambient temperature
1.0
0.5
0.0
0
25
50
75
100 125 150
17413
T
amb
– Ambient Temperature ( qC )
Figure 3. Power Dissipation vs. Ambient Temperature
www.vishay.com
Document Number 85810
Rev. 4, 16-Sep-03
4
BZD27C3V6P to BZD27C200P
VISHAY
Vishay Semiconductors
Package Dimensions in mm
Cathode Band
T op View
1.8 0.1
1.0 0.2
2.8
0.1
5
0.05 - 0.30
0.98 0.1
5
Z
0.60 0.25
Detail
Z
enlarged
0.00 - 0.10
3.7 0.2
17247
Mounting Pad Layout
1.2
1.6
1.2
17248
Document Number 85810
Rev. 4, 16-Sep-03
www.vishay.com
5
BZD27C3V6P to BZD27C200P
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
6
Document Number 85810
Rev. 4, 16-Sep-03
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