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BZG04-110-TR3 [VISHAY]

Trans Voltage Suppressor Diode, 110V V(RWM), Unidirectional,;
BZG04-110-TR3
型号： BZG04-110-TR3
厂家： VISHAY    VISHAY
描述：

Trans Voltage Suppressor Diode, 110V V(RWM), Unidirectional,
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BZG04...  
Vishay Semiconductors  
Silicon Transient Voltage Suppressors  
Features  
D Glass passivated junction  
D High reliability  
D Stand–off voltage range 8.2V to 220V  
D Excellent clamping cabability  
D Fast response time (typ. x1ps from 0 to V  
)
Zmin  
Applications  
15 811  
D Protection from high voltage, high energy  
transients  
Order Instruction  
Type  
BZG04–8V2  
BZG04–8V2  
Ordering Code  
BZG04–8V2–TR  
BZG04–8V2–TR3  
Remarks  
Tape and Reel (1.500 pcs)  
Tape and Reel (6.000 pcs)  
Absolute Maximum Ratings  
Tj = 25°C  
Parameter  
Power dissipation  
Test Conditions  
Symbol  
Value  
3
1.25  
300  
Unit  
W
W
R
R
<25 K/W, T =100°C  
P
thJA  
amb  
V
<100 K/W, T =50°C  
P
thJA  
amb  
V
Non repetitive peak surge  
power dissipation  
Peak forward surge current  
Junction temperature  
t =10/1000µs,  
P
W
p
ZSM  
T =25°C prior to surge  
j
10 ms single half sine wave  
I
50  
175  
–65...+150  
A
FSM  
T
°C  
j
Storage temperature range  
T
stg  
°C  
Maximum Thermal Resistance  
Tj = 25°C  
Parameter  
Junction lead  
Junction ambient  
Test Conditions  
Symbol  
Value  
25  
150  
125  
100  
Unit  
K/W  
K/W  
R
thJL  
thJA  
mounted on epoxy–glass hard tissue, Fig. 1a  
mounted on epoxy–glass hard tissue, Fig. 1b  
mounted on Al–oxid–ceramic (Al O ), Fig. 1b  
R
2
3
Electrical Characteristics  
Tj = 25°C  
Parameter  
Forward voltage  
Test Conditions  
I =0.5A  
Symbol  
Min.  
Typ.  
Max.  
1.2  
Unit  
V
V
F
F
Document Number 85594  
Rev. 8, 10-Dec-01  
www.vishay.com  
1 (5)  
BZG04...  
Vishay Semiconductors  
Type  
Standoff Voltage  
µA  
Breakdown Voltage  
TK at I  
Clamping Voltage  
VZ  
R
V
at I  
V
CL(R)  
*)  
at I  
(BR)  
R
PP  
*)  
BZG04...  
V
V
I
V
mA  
%/K  
Typ.  
0.05  
0.05  
0.05  
0.05  
0.05  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.07  
0.07  
0.07  
0.07  
0.08  
0.08  
0.08  
0.08  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
%/K  
V
A
R
R
Max.  
20  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Min.  
9.4  
10.4  
11.4  
12.4  
13.8  
15.3  
16.8  
18.8  
20.8  
22.8  
25.1  
28  
31  
34  
37  
40  
44  
48  
52  
58  
Max.  
0.09  
0.10  
0.10  
0.10  
0.10  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.12  
0.12  
0.12  
0.12  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
Max.  
14.8  
15.7  
17.0  
18.9  
20.9  
22.9  
25.6  
28.4  
31.0  
33.8  
38.1  
42.2  
46.2  
50.1  
54.1  
60.7  
65.5  
70.8  
78.6  
86.5  
94.4  
103.5  
114  
126  
139  
152  
167  
185  
204  
224  
249  
276  
305  
336  
380  
8V2  
9V1  
10  
11  
12  
13  
15  
16  
18  
20  
22  
24  
27  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
82  
8.2  
9.1  
10  
11  
12  
13  
15  
16  
18  
20  
22  
24  
27  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
82  
50  
50  
50  
50  
50  
50  
25  
25  
25  
25  
25  
25  
25  
25  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
5
20.3  
19.1  
17.7  
15.9  
14.4  
13.1  
11.7  
10.6  
9.7  
8.9  
7.9  
7.1  
6.5  
6.0  
5.5  
4.9  
4.6  
4.2  
3.8  
3.5  
3.2  
2.9  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
64  
70  
77  
85  
94  
91  
91  
104  
114  
124  
138  
153  
168  
188  
208  
228  
251  
5
5
5
5
5
5
5
5
100  
110  
120  
130  
150  
160  
180  
200  
220  
100  
110  
120  
130  
150  
160  
180  
200  
220  
5
5
5
2
2
*)  
10/1000 µs pulse  
www.vishay.com  
2 (5)  
Document Number 85594  
Rev. 8, 10-Dec-01  
BZG04...  
Vishay Semiconductors  
Characteristics (Tj = 25_C, unless otherwise specified)  
a)  
b)  
4
5.0  
3
2.0  
2.0  
R =25K/W  
thJA  
1.5  
2
10.0  
R =100K/W  
thJA  
1
0
1.0  
25.0  
25.0  
200  
0
40  
80  
120  
160  
94 9313  
T
amb  
– Ambient Temperature ( °C )  
94 9580  
Figure 3. Total Power Dissipation vs.  
Ambient Temperature  
Figure 1. Boards for R  
definition (copper overlay 35µ)  
thJA  
3.0  
2.5  
2.0  
1.5  
1.0  
2.6  
2.4  
2.2  
7.0  
2.4  
0.5  
0
94 9314  
2.0  
0
0.5  
1.0  
1.5  
V – Forward Voltage ( V )  
F
94 9581  
Figure 2. Recommended foot pads (in mm)  
Figure 4. Forward Current vs. Forward Voltage  
Document Number 85594  
Rev. 8, 10-Dec-01  
www.vishay.com  
3 (5)  
BZG04...  
Vishay Semiconductors  
Dimensions in mm  
14275  
www.vishay.com  
4 (5)  
Document Number 85594  
Rev. 8, 10-Dec-01  
BZG04...  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as  
their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone  
depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their  
use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs  
listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances  
and do not contain such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer application  
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the  
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or  
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 85594  
Rev. 8, 10-Dec-01  
www.vishay.com  
5 (5)  

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