BZG04-39/TR [VISHAY]
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, ROHS COMPLIANT PACKAGE-2, Transient Suppressor;
| 型号： | BZG04-39/TR |
| 厂家： | 
VISHAY |
| 描述： | DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, ROHS COMPLIANT PACKAGE-2, Transient Suppressor 瞬态抑制器 二极管 齐纳二极管 |
| 文件： | 总6页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZG04-Series
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
• Glass passivated junction
• High reliability
e3
• Stand-off Voltage range 8.2 V to 220 V
• Excellent clamping cabability
• Fast response time (typ. ≤ 1 ps from 0 to V
• Lead (Pb)-free component
)
Zmin
15811
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Protection from high voltage, high energy transients
Mechanical Data
Case: DO-214AC
Weight: approx. 77 mg
Packaging Codes/Options:
TR / 1.5 k 7 " reel
TR3 / 6 k 13 " reel 6 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Power dissipation
Test condition
Symbol
Pdiss
Value
3
Unit
W
RthJA < 25 K/W, Tamb = 100 °C
R
thJA < 100 K/W, Tamb = 50 °C
Pdiss
1.25
300
W
W
Non repetitive peak surge power tp = 10/1000 µs sq.pulse,
PZSM
dissipation
Tj = 25 °C prior to surge
Peak forward surge current
Junction temperature
10 ms single half sine wave
IFSM
Tj
50
150
A
°C
°C
Storage temperature range
Tstg
- 65 to + 150
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
RthJL
Value
25
Unit
Junction lead
K/W
K/W
Junction ambient
mounted on epoxy-glass hard
tissue, Fig. 1a
RthJA
RthJA
RthJA
150
125
100
mounted on epoxy-glass hard
tissue, Fig. 1b
K/W
K/W
mounted on Al-oxid-ceramic
(Al2O3), Fig. 1b
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
IF = 0.5 A
Symbol
VF
Min
Typ.
Max
1.2
Unit
V
Forward voltage
Document Number 85594
Rev. 2.2, 15-Sep-05
www.vishay.com
1
BZG04-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber
Standoff Voltage
Breakdown Voltage
V(BR) @ IR
TKVZ @ IR
Clamping Voltage
Junction
Capacitance
VR
V
IR
VCL(R)
IPP
@
@ IZT
Cj @
VR = 0 V,
f = 1 MHz
pF
V *)
max
14.8
15.7
17
A *)
µA
V
mA
%/K
max
20
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
min
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
typ
max
0.09
0.1
typ
1200
1100
1000
850
815
785
710
655
610
570
545
505
475
450
420
390
370
350
330
310
291
280
275
260
250
243
170
153
150
145
140
135
131
122
120
BZG04-8V2
BZG04-9V1
BZG04-10
BZG04-11
BZG04-12
BZG04-13
BZG04-15
BZG04-16
BZG04-18
BZG04-20
BZG04-22
BZG04-24
BZG04-27
BZG04-30
BZG04-33
BZG04-36
BZG04-39
BZG04-43
BZG04-47
BZG04-51
BZG04-56
BZG04-62
BZG04-68
BZG04-75
BZG04-82
BZG04-91
BZG04-100
BZG04-110
BZG04-120
BZG04-130
BZG04-150
BZG04-160
BZG04-180
BZG04-200
BZG04-220
8.2
9.1
10
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
20.3
19.1
17.7
15.9
14.4
13.1
11.7
10.6
9.7
8.9
7.9
7.1
6.5
6.0
5.5
4.9
4.6
4.2
3.8
3.5
3.2
2.9
2.6
2.4
2.2
2.0
1.8
1.6
1.5
1.3
1.2
1.1
1.0
0.9
0.8
0.1
11
0.1
18.9
20.9
22.9
25.6
28.4
31
12
0.1
13
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
15
16
18
20
33.8
38.1
42.2
46.2
50.1
54.1
60.7
65.5
70.8
78.6
86.5
94.4
22
24
27
31
30
34
33
37
36
40
39
44
43
48
47
52
51
58
56
64
62
70
103.5
114
126
139
152
167
185
204
224
249
276
305
336
380
68
77
75
85
82
94
5
91
104
114
124
138
153
168
188
208
228
251
5
100
110
120
130
150
160
180
200
220
5
5
5
5
5
5
2
2
2
*) 10/1000 µs pulse
www.vishay.com
2
Document Number 85594
Rev. 2.2, 15-Sep-05
BZG04-Series
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
a)
b)
3.0
2.5
5.0
2.0
2.0
2.0
1.5
1.0
1.5
10.0
0.5
0
1.0
25.0
25.0
2.0
0
0.5
V
1.0
1.5
94 9313
– Forward Voltage ( V )
94 9581
F
Figure 1. Boards for RthJA definition (copper overlay 35µ)
Figure 3. Forward Current vs. Forward Voltage
40
30
10000
1000
100
10
20
l
l
10
0
T = constant
L
30
100
0
5
10
15
20
25
0.01
0.1
t
1
10
l – Lead Length ( mm )
– Pulse Length ( ms )
94 9570
94 9582
p
Figure 2. Typ. Thermal Resistance vs. Lead Length
Figure 4. Non Repetitive Surge Power Dissipation vs. Pulse
Length
1000
100
10
1
t /T=0.5
p
t /T=0.2
p
t /T=0.1
p
t /T=0.05
p
t /T=0.02
p
t /T=0.01
p
–5
–4
–3
–2
–1
0
1
2
10
10
10
10
10
10
10
10
t
p
– Pulse Length ( s )
94 9583
Figure 5. Thermal Response
Document Number 85594
Rev. 2.2, 15-Sep-05
www.vishay.com
3
BZG04-Series
Vishay Semiconductors
Package Dimensions in mm (Inches)
19628
www.vishay.com
4
Document Number 85594
Rev. 2.2, 15-Sep-05
BZG04-Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85594
Rev. 2.2, 15-Sep-05
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
BZG04-39/TR3
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, ROHS COMPLIANT PACKAGE-2, Transient Suppressor
VISHAY
BZG04-39T/R
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC PACKAGE-2, Transient Suppressor
NXP
BZG04-39TR
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, LEAD FREE, PLASTIC PACKAGE-2, Transient Suppressor
VISHAY
©2020 ICPDF网 联系我们和版权申明