BZG05C3V3-E3/2Q [VISHAY]

DIODE 3.3 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Voltage Regulator Diode;
BZG05C3V3-E3/2Q
型号: BZG05C3V3-E3/2Q
厂家: VISHAY    VISHAY
描述:

DIODE 3.3 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Voltage Regulator Diode

文件: 总2页 (文件大小:22K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BZG05C Series  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Surface Mount Glass Passivated Zeners  
Zener Voltage 3.3 to 15V  
Steady State Power 1.25W  
DO-214AC (SMA)  
Cathode Band  
0.065 (1.65)  
0.049 (1.25)  
0.110 (2.79)  
0.100 (2.54)  
Mounting Pad Layout  
0.060 MIN  
(1.52 MIN)  
0.094 MAX  
(2.38 MAX)  
0.177 (4.50)  
0.157 (3.99)  
0.012 (0.305)  
0.006 (0.152)  
0.090 (2.29)  
0.078 (1.98)  
0.050 MIN  
(1.27 MIN)  
0.220 REF  
(5.58)  
0.060 (1.52)  
0.030 (0.76)  
0.008 (0.203)  
MAX.  
0.208 (5.28)  
0.194 (4.93)  
Dimensions in inches and (millimeters)  
Mechanical Data  
Features  
Case: JEDEC DO-214AC molded plastic over  
passivated junction  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
Terminals: Solder plated, solderable per  
• For surface mounted applications  
MIL-STD-750, Method 2026  
• Planar, oxide passivated chip junction  
High temperature soldering guaranteed:  
250°C/10 seconds at terminals  
Polarity: Color band denotes positive end (cathode)  
Mounting Position: Any Weight: 0.002oz., 0.064g  
Packaging Codes – Options (Antistatic):  
2P 1.8K per 7plastic Reel  
(12mm tape), 36K/carton  
2Q 7.5K per 13plastic Reel  
(12mm tape), 75K/carton  
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
W
Power Dissipation(1)  
Ptot  
1.25  
Non repetitive peak surge power dissipation(2)  
Maximum junction temperature  
Storage temperature range  
PZSM  
TJ  
60  
W
150  
°C  
Tstg  
65 to +150  
30  
°C  
Typical thermal resistance junction to lead  
Maximum thermal resistance junction to ambient(1)  
RΘJL  
RΘJA  
°C/W  
°C/W  
100  
Notes: (1) Mounted on aluminum-oxide substrate  
(2) tp=100µs sq. pulse, TJ=25°C prior to surge  
Document Number 88313  
26-Apr-02  
www.vishay.com  
1
BZG05C Series  
Vishay Semiconductors  
formerly General Semiconductor  
Electrical Characteristics (TA = 25°C unless otherwise noted) Maximum VF = 1.2V at IF = 0.2A  
V at I  
(V)  
r
zj  
at I  
()  
αvz at I  
r
at  
I
I
at  
V
R
(V)  
Z
ZT  
ZT  
ZT  
(%/°C)  
zk  
zk  
R
I
ZT  
Marking  
Code  
()  
(mA)  
(µA)  
(mA)  
Type  
Min  
Max  
Max  
25  
25  
20  
15  
15  
15  
10  
5
Typ  
Max  
-0.05  
-0.05  
-0.02  
-0.01  
0.04  
0.04  
0.05  
0.06  
0.06  
0.07  
0.07  
0.08  
0.08  
0.08  
0.09  
0.09  
0.09  
Max  
Max  
BZG05C3V3  
BZG05C3V6  
BZG05C3V9  
BZG05C4V3  
BZG05C4V7  
BZG05C5V1  
BZG05C5V6  
BZG05C6V2  
BZG05C6V8  
BZG05C7V5  
BZG05C8V2  
BZG05C9V1  
BZG05C10  
BZG05C11  
BZG05C12  
BZG05C13  
BZG05C15  
GA  
GB  
GC  
GD  
GE  
GF  
GG  
GH  
GI  
3.1  
3.4  
3.5  
3.8  
-0.08  
-0.08  
-0.07  
-0.07  
-0.03  
-0.01  
0.00  
0.01  
0.02  
0.02  
0.03  
0.04  
0.04  
0.05  
0.05  
0.05  
0.06  
80  
60  
60  
50  
45  
45  
45  
35  
35  
35  
25  
25  
25  
20  
20  
20  
15  
500  
500  
500  
500  
500  
500  
400  
300  
300  
200  
200  
200  
200  
300  
350  
400  
500  
1
1
40  
20  
10  
3
1
1
3.7  
4.1  
1
1
4.0  
4.6  
1
1
4.4  
5.0  
1
3
1
4.8  
5.4  
1
1
1.5  
2
5.2  
6.0  
1
1
5.8  
6.6  
1
1
3
6.4  
7.2  
4
1
1
4
GJ  
7.4  
7.9  
3.5  
6
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
1
4.5  
6.2  
6.8  
7.5  
8.2  
9.1  
10  
11  
GK  
GL  
GM  
GN  
GO  
GP  
GQ  
7.7  
8.7  
1
8.5  
9.6  
6
1
9.4  
10.6  
11.6  
12.7  
14.1  
15.6  
8
0.5  
0.5  
0.5  
0.5  
0.5  
10.4  
11.4  
12.4  
13.8  
10  
10  
12  
20  
www.vishay.com  
2
Document Number 88313  
26-Apr-02  

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