BZM55B51TR [VISHAY]
Zener Diode, Silicon, HERMETIC SEALED, MICROMELF-2;
| 型号： | BZM55B51TR |
| 厂家： | 
VISHAY |
| 描述： | Zener Diode, Silicon, HERMETIC SEALED, MICROMELF-2 二极管 |
| 文件： | 总6页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZM55B...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
Saving space
Hermetic sealed parts
Fits onto SOD 323 / SOT 23 footprints
Electrical data identical with the devices
BZT55B... / TZMB...
Very sharp reverse characteristic
Low reverse current level
Very high stability
96 12315
Low noise
Available with tighter tolerances
V –tolerance ± 2%
Z
Applications
Voltage stabilization
Absolute Maximum Ratings
T = 25 C
j
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
300K/W
Type
Symbol
Value
500
Unit
mW
mA
C
P
V
R
thJA
I
Z
P /V
V
Z
T
175
–65...+175
j
T
stg
C
Maximum Thermal Resistance
T = 25 C
j
Parameter
Test Conditions
Symbol Value
Unit
K/W
K/W
Junction ambient mounted on epoxy–glass hard tissue, Fig. 1
Junction tie point 35 m copper clad, 0.9 mm copper area per electrode
R
thJA
500
300
2
R
thJL
Electrical Characteristics
T = 25 C
j
Parameter
Forward voltage
Test Conditions
I =200mA
Type
Symbol Min
Typ Max Unit
1.5
V
F
V
F
Document Number 85597
Rev. 3, 01-Apr-99
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1 (6)
BZM55B...
Vishay Telefunken
Type
BZM55B...
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
V
I
for
V
V
and
r
r
at
I
I
and I at V
TK
VZ
%/K
Znom
ZT
ZT
zjT
zjk
ZK
R
R
R
2)
V
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
A
A
V
1
1
1
1
1
1
1
1
1
1
2
3
5
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
2.35 to 2.45
2.64 to 2.76
2.94 to 3.06
3.24 to 3.36
3.52 to 3.68
3.82 to 3.98
4.22 to 4.38
4.60 to 4.80
5.00 to 5.20
5.48 to 5.72
6.08 to 6.32
6.66 to 6.94
7.35 to 7.65
8.04 to 8.36
8.92 to 9.28
9.80 to 10.20
10.78 to 11.22
11.76 to 12.24
12.74 to 13.26
14.70 to 15.30
15.70 to 16.30
17.64 to 18.36
19.60 to 20.40
21.55 to 22.45
23.5 to 24.5
26.4 to 27.6
29.4 to 30.6
32.4 to 33.6
35.3 to 36.7
38.2 to 39.8
42.1 to 43.9
46.1 to 47.9
50.0 to 52.0
54.9 to 57.1
60.8 to 63.2
66.6 to 69.4
73.5 to 76.5
< 85
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
< 8
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 100 < 50
< 10 < 50
–0.09 to –0.06
–0.09 to –0.06
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.06 to –0.03
–0.05 to +0.02
–0.02 to +0.02
–0.05 to +0.05
0.03 to 0.06
0.03 to 0.07
0.03 to 0.07
0.03 to 0.08
0.03 to 0.09
0.03 to 0.1
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.04 to 0.12
0.04 to 0,12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
< 4
< 2
< 2
< 2
< 1
< 40
< 40
< 40
< 40
< 20
< 0.5 < 10
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 5
< 5
< 5
< 7
< 7
< 50
< 50
< 70
< 70
6.2
6.8
7.5
8.2
9.1
10
11
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
0.5 < 0.1
0.5 < 0.1
0.5 < 0.1 < 10
< 110 < 700
< 125 < 700
< 135 < 1000 0.5 < 0.1 < 10
< 150 < 1000 0.5 < 0.1 < 10
< 200 < 1000 0.5 < 0.1 < 10
< 250 < 1500 0.5 < 0.1 < 10
51
56
62
68
75
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2 (6)
Document Number 85597
Rev. 3, 01-Apr-99
BZM55B...
Vishay Telefunken
Characteristics (Tj = 25 C unless otherwise specified)
600
500
400
300
200
100
0
200
150
100
50
V =2V
R
T =25°C
j
0
200
25
0
40
80
120
160
0
5
10
V – Z-Voltage ( V )
Z
15
20
95 9602
T
amb
– Ambient Temperature ( °C )
95 9601
Total Power Dissipation vs.
Ambient Temperature
Diode Capacitance vs. Z–Voltage
1.3
1.2
1.1
1000
100
10
V
=V /V (25°C)
Zt Z
Ztn
–4
TK =10 10 /K
VZ
T =25°C
j
–4
8
6
10 /K
–4
10 /K
–4
4
2
10 /K
–4
10 /K
0
I =5mA
Z
1.0
0.9
0.8
–4
–2 10 /K
–4
–4 10 /K
1
240
–60
0
60
120
180
25
0
5
10
15
20
95 9599
T – Junction Temperature ( °C )
j
95 9598
V – Z-Voltage ( V )
Z
Typical Change of Working Voltage vs.
Junction Temperature
Typical Change of Working Voltage
under Operating Conditions at T =25 C
amb
100
15
10
5
10
1
T =25°C
j
0.1
I =5mA
Z
0
0.01
0.001
–5
1.0
0
0.2
0.4
0.6
0.8
50
0
10
20
30
40
95 9605
V – Forward Voltage ( V )
F
95 9600
V – Z-Voltage ( V )
Z
Temperature Coefficient of Vz vs. Z–Voltage
Forward Current vs. Forward Voltage
Document Number 85597
Rev. 3, 01-Apr-99
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3 (6)
BZM55B...
Vishay Telefunken
100
80
1000
100
10
I =1mA
Z
P
T
=500mW
tot
=25°C
amb
60
5mA
40
20
0
10mA
T =25°C
j
1
20
25
0
4
8
12
16
0
5
10
15
20
95 9604
V
– Z-Voltage ( V )
95 9606
V – Z-Voltage ( V )
Z
Z
Z–Current vs. Z–Voltage
Differential Z–Resistance vs. Z–Voltage
50
40
30
P
T
=500mW
tot
=25°C
amb
20
10
0
35
15
20
25
V – Z-Voltage ( V )
Z
30
95 9607
Z–Current vs. Z–Voltage
1000
100
10
t /T=0.5
p
t /T=0.2
p
Single Pulse
R
T=T
=300K/W
–T
jmax amb
thJA
t /T=0.01
p
t /T=0.1
p
t /T=0.02
p
2
1/2
t /T=0.05
p
i
=(–V +(V +4r
T/Z
)
)/(2r )
ZM
Z
Z
zj
thp
zj
1
10
–1
0
1
2
10
10
t – Pulse Length ( ms )
10
95 9603
p
Thermal Response
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4 (6)
Document Number 85597
Rev. 3, 01-Apr-99
BZM55B...
Vishay Telefunken
0.71
1.3
Wave Soldering
1.27
1.4
0.152
9.9
0.355
0.7
1.4
2.8
0.7
25
Recommended foot pads (in mm)
10
2.5
24
95 10329
Board for R
definition (in mm)
thJA
Reflow Soldering
1.2
0.6
1.2
2.4
0.6
Recommended foot pads (in mm)
Dimensions in mm
96 12072
Document Number 85597
Rev. 3, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
5 (6)
BZM55B...
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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6 (6)
Document Number 85597
Rev. 3, 01-Apr-99
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