BZT03D8V2 [VISHAY]
Silicon Z-Diodes and Transient Voltage Suppressors; 硅Z-二极管和瞬态电压抑制器型号: | BZT03D8V2 |
厂家: | VISHAY |
描述: | Silicon Z-Diodes and Transient Voltage Suppressors |
文件: | 总5页 (文件大小:70K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BZT03D...
Vishay Telefunken
Silicon Z–Diodes and Transient Voltage Suppressors
Features
Glass passivated junction
Hermetically sealed package
Clamping time in picoseconds
Applications
94 9539
Medium power voltage regulators and
medium power transient suppression circuits
Absolute Maximum Ratings
T = 25 C
j
Parameter
Power dissipation
Test Conditions
l=10mm, T =25 C
Type Symbol
Value
3.25
1.3
10
600
Unit
W
W
W
W
C
P
V
P
V
L
T =25 C
amb
Repetitive peak reverse power dissipation
Non repetitive peak surge power dissipation t =100 s, T =25 C
Junction temperature
P
P
ZRM
ZSM
p
j
T
175
j
Storage temperature range
T
stg
–65...+175
C
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient l=10mm, T =constant
Test Conditions
Symbol
Value
46
100
Unit
K/W
K/W
R
thJA
R
thJA
L
on PC board with spacing 25mm
Electrical Characteristics
T = 25 C
j
Parameter
Forward voltage
Test Conditions
I =0.5A
Type
Symbol Min
Typ Max Unit
1.2
V
F
V
F
Document Number 85600
Rev. 2, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
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BZT03D...
Vishay Telefunken
Type
BZT03D...
Min.
V
V
r
zj
and
Max.
2
2
2
2
4
4
7
7
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
200
250
250
300
300
350
400
500
750
850
1000
TK
%/K
Min.
0
at
I
I
at
V
R
Z
VZ
Z
R
mA
A
Typ.
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
Max.
6.8
7.5
8.25
9.0
Typ.
1
1
1
1
2
2
4
4
5
5
6
6
6
6
7
7
Max.
0.07
0.07
0.07
0.08
0.08
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
Max.
1500
1000
750
600
20
10
4
6V2
6V8
7V5
8V2
9V1
10
5.6
6.1
6.75
7.4
8.2
9.0
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
4.4
4.8
5.3
5.9
6.5
7.1
7.9
8.6
9.3
10.6
11.6
12.6
14.4
15.8
17.2
19.4
21.5
23.5
25.8
28
0
0
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
10.0
11.0
12.1
13.2
14.3
16.5
17.6
19.8
22.0
24.2
26.4
29.7
33
36.3
39.6
42.9
47.3
51.7
56.1
61.6
68.2
74.8
82.5
90.2
100
110
11
9.9
12
13
15
16
18
20
22
24
10.8
11.7
13.5
14.4
16.2
18.0
29.8
21.6
24.3
27
3
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
27
30
8
8
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
220
240
270
29.7
32.4
35.1
38.7
42.3
45.9
50.4
55.8
61.2
67.5
73.8
81.9
90
21
21
24
24
25
25
25
25
30
30
60
60
80
80
110
130
150
180
200
350
400
450
31
33.5
36.5
40
44.5
49
54
59
65
71
79
86
93
106
116
126
144
158
172
194
75
82
91
100
110
120
130
150
160
180
200
220
240
270
5
5
5
5
5
5
5
5
99
121
132
143
165
176
198
220
242
264
297
108
117
135
144
162
180
198
216
243
2
2
2
1
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Document Number 85600
Rev. 2, 01-Apr-99
BZT03D...
Vishay Telefunken
Type
Clamping at
Stand–off at
1)
2)
V
I
I
R
V
(CL)R
RSM
R
BZT03D...
V
A
A
V
Max.
9.5
Max.
3000
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
34.0
31.0
26.5
24.4
22.7
20.3
19.1
17.7
15.9
14.4
13.1
11.7
10.6
9.7
8.9
7.9
7.1
6.5
6.0
5.5
4.8
5.3
5.9
6.5
7.1
7.9
8.6
9.3
10.6
11.6
12.6
14.4
15.8
17.2
19.4
21.5
23.5
25.8
28
10.5
11.6
12.6
13.7
15.2
16.2
17.5
19.1
21.8
23.4
26.3
29.2
31.9
34.6
39
2000
1500
1200
50
20
5
5
5
5
5
5
5
5
5
5
5
5
5
43.5
47.5
51.5
56
36
39
5
31
43
47
51
62
67.5
73
4.9
4.6
4.2
5
5
5
33.5
36.5
40
56
62
81
89
3.8
3.5
5
5
44.5
49
68
97
3.2
5
54
75
82
91
107
117
130
143
157
172
187
213
229
256
284
314
364
388
2.9
2.6
2.4
2.2
2.0
1.8
1.6
1.5
1.3
1.2
1.1
1.0
0.9
0.8
5
5
5
5
5
5
5
5
5
5
5
5
5
5
59
65
71
79
86
93
106
116
126
144
158
172
194
215
100
110
120
130
150
160
180
200
220
240
270
1)
10/1000 exp. falling pulse t = 1000 ms down to 50%
p
Document Number 85600
Rev. 2, 01-Apr-99
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BZT03D...
Vishay Telefunken
Characteristics (Tj = 25 C unless otherwise specified)
3.0
50
3
2.5
2.0
1.5
1.0
0.5
0
T =25°C
j
25
50
2.0
0
0.5
1.0
V – Forward Voltage ( V )
F
1.5
7
2
94 9086a
94 9585
Figure 1. Epoxy glass hard tissue, board
Figure 3. Forward Current vs. Forward Voltage
thickness 1.5 mm, R
100 K/W
thJA
10000
4
3
2
1
0
l
l
l=10mm
15mm
T =25°C
j
1000
100
10
T =constant
L
20mm
see Fig.1
100
0.01
0.1
1
10
200
0
40
80
120
160
94 9586
t – Pulse Length ( ms )
p
94 9584
T
amb
– Ambient Temperature ( °C )
Figure 2. Total Power Dissipation vs.
Ambient Temperature
Figure 4. Non Repetitive Surge Power Dissipation vs.
Pulse Length
Dimensions in mm
3.6 max.
94 9538
Sintered Glass Case
SOD 57
Weight max. 0.5g
Cathode Identification
technical drawings
according to DIN
specifications
0.82 max.
26 min.
26 min.
4.2 max.
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Document Number 85600
Rev. 2, 01-Apr-99
BZT03D...
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85600
Rev. 2, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
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