BZT52B9V1-V [VISHAY]

Small Signal Zener Diodes; 小信号齐纳二极管
BZT52B9V1-V
型号: BZT52B9V1-V
厂家: VISHAY    VISHAY
描述:

Small Signal Zener Diodes
小信号齐纳二极管

稳压二极管 齐纳二极管 测试 光电二极管
文件: 总10页 (文件大小:262K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BZT52-V-Series  
Vishay Semiconductors  
Small Signal Zener Diodes  
Features  
• Silicon Planar Power Zener Diodes  
• These diodes are also available in other  
case styles and other configurations  
including: the SOT-23 case with type des-  
e3  
ignation BZX84 series, the dual zener diode com-  
mon anode configuration in the SOT-23 case with  
type designation AZ23 series and the dual zener  
diode common cathode configuration in the SOT-  
23 case with type designation DZ23 series.  
17431  
• The Zener voltages are graded according to the  
international E 24 standard.  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Mechanical Data  
Case: SOD-123 Plastic case  
Weight: approx. 9.3 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7 " reel (8 mm tape), 15 k/box  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
Value  
Unit  
Zener current see table "  
Characteristics "  
5002)  
4101)  
Power dissipation  
Power dissipation  
Ptot  
Ptot  
mW  
mW  
1) Diode on ceramic substrate 0.7 mm; 2.5 mm2 pad areas  
2) Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
3001)  
Unit  
Thermal resistance junction to  
ambient air  
°C/W  
Junction temperature  
TJ  
150  
°C  
°C  
Storage temperature range  
TS  
- 65 to + 150  
1) Valid provided that electrodes are kept at ambient temperature  
Document Number 85760  
Rev. 1.5, 21-Apr-05  
www.vishay.com  
1
BZT52-V-Series  
Vishay Semiconductors  
Electrical Characteristics  
Partnumber  
Marking  
Code  
Zener Voltage  
Dynamic Resistance  
Test  
Current  
Temp.  
Coefficient  
Reverse Admissible Zener  
Range1)  
Current4)  
Voltage  
VZ @ IZT1  
rzj @ IZT1  
rzj @ IZT2  
IZT1  
@ IZT1  
VR @ IR  
IZ @  
IZ @  
=
Tamb  
=
Tamb =  
100 nA,  
45 °C,  
25 °C,  
V
mA  
αVZ  
V
mA  
(10-4/°C)  
min  
2.2  
2.5  
2.8  
3.1  
3.4  
3.7  
4
max  
2.6  
2.9  
3.2  
3.5  
3.8  
4.1  
4.6  
5
BZT52C2V4-V  
BZT52C2V7-V  
BZT52C3V0-V  
BZT52C3V3-V  
BZT52C3V6-V  
BZT52C3V9-V  
BZT52C4V3-V  
BZT52C4V7-V  
BZT52C5V1-V  
BZT52C5V6-V  
BZT52C6V2-V  
BZT52C6V8-V  
BZT52C7V5-V  
BZT52C8V2-V  
BZT52C9V1-V  
BZT52C10-V  
BZT52C11-V  
BZT52C12-V  
BZT52C13-V  
BZT52C15-V  
BZT52C16-V  
BZT52C18-V  
BZT52C20-V  
BZT52C22-V  
BZT52C24-V  
BZT52C27-V  
BZT52C30-V  
BZT52C33-V  
BZT52C36-V  
BZT52C39-V  
BZT52C43-V  
BZT52C47-V  
BZT52C51-V  
BZT52C56-V  
W1  
W2  
W3  
W4  
W5  
W6  
W7  
W8  
W9  
WA  
WB  
WC  
WD  
WE  
WF  
WG  
WH  
WI  
85  
600  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5  
- 9 to - 4  
- 9 to - 4  
- 9 to - 3  
- 8 to - 3  
- 8 to - 3  
- 7 to - 3  
- 6 to - 1  
- 5 to +2  
- 3 to +4  
- 2 to +6  
- 1 to +7  
+2 to +7  
+3 to +7  
+4 to +7  
+5 to +8  
+5 to +8  
+5 to +9  
+6 to +9  
+7 to +9  
+7 to +9  
+8 to +9.5  
+8 to +9.5  
+8 to +10  
+8 to +10  
+8 to +10  
+8 to +10  
+8 to +10  
+8 to +10  
+8 to +10  
+10 to +12  
+10 to +12  
+10 to +12  
+10 to +12  
-
-
-
113  
98  
92  
85  
77  
71  
64  
56  
50  
45  
41  
37  
34  
30  
28  
25  
23  
21  
19  
17  
15  
14  
13  
11  
10  
9
-
134  
118  
109  
100  
92  
84  
76  
67  
59  
54  
49  
44  
40  
36  
33  
30  
28  
25  
23  
20  
18  
17  
16  
13  
12  
10  
9
75 (< 83)  
80 (< 95)  
80 (< 95)  
80 (< 95)  
80 (< 95)  
80 (< 95)  
70 (< 78)  
30 (< 60)  
10 (< 40)  
4.8 (< 10)  
4.5 (< 8)  
4 (< 7)  
< 500  
< 500  
< 500  
< 500  
< 500  
< 500  
< 500  
< 480  
< 400  
< 200  
< 150  
< 50  
-
-
-
-
-
4.4  
4.8  
5.2  
5.8  
6.4  
7
-
5.4  
6
> 0.8  
> 1  
> 2  
> 3  
> 5  
> 6  
> 7  
> 7.5  
> 8.5  
> 9  
> 10  
> 11  
> 12  
> 14  
> 15  
> 17  
> 18  
> 20  
> 22.5  
> 25  
> 27  
> 29  
> 32  
> 35  
> 38  
-
6.6  
7.2  
7.9  
8.7  
9.6  
10.6  
11.6  
12.7  
14.1  
15.6  
17.1  
19.1  
21.2  
23.3  
25.6  
28.9  
32  
7.7  
8.5  
9.4  
10.4  
11.4  
12.4  
13.8  
15.3  
16.8  
18.8  
20.8  
22.8  
25.1  
28  
4.5 (< 7)  
4.8 (< 10)  
5.2 (< 15)  
6 (< 20)  
< 50  
< 50  
< 70  
< 70  
7 (< 20)  
< 90  
WK  
WL  
WM  
WN  
WO  
WP  
WR  
WS  
WT  
WU  
WW  
WX  
WY  
WZ  
X1  
9 (< 25)  
< 110  
< 110  
< 170  
< 170  
< 220  
< 220  
< 220  
< 250  
< 250  
< 250  
< 250  
< 300  
< 700  
< 750  
< 750  
11 (< 30)  
13 (< 40)  
18 (< 50)  
20 (< 50)  
25 (< 55)  
28 (< 80)  
30 (< 80)  
35 (< 80)  
40 (< 80)  
40 (< 90)  
50 (< 90)  
60 (< 100)  
70 (< 100)  
70 (< 100)  
31  
35  
8
34  
38  
8
9
37  
41  
7
8
40  
46  
6
7
44  
50  
5
6
48  
54  
5
6
< 135(2)  
< 150(2)  
< 200(2)  
< 250(2)  
< 1000(3)  
< 1000(3)  
< 1000(3)  
< 1500(3)  
typ. +10(2)  
typ. +10(2)  
typ. +10(2)  
typ. +10(2)  
X2  
52  
60  
-
-
BZT52C62-V  
BZT52C68-V  
BZT52C75-V  
X3  
X4  
X5  
58  
64  
70  
66  
72  
79  
2.5  
2.5  
2.5  
-
-
-
-
-
-
-
-
-
IZT1 = 5 mA, IZT2 = 1 mA  
(1) Measured with pulses Tp = 5 ms  
(2) = IZT1 = 2.5 mA  
(3) = IZT2 = 0.5 mA  
(4) Valid provided that electrodes are kept at ambient temperature.  
www.vishay.com  
2
Document Number 85760  
Rev. 1.5, 21-Apr-05  
BZT52-V-Series  
Vishay Semiconductors  
Electrical Characteristics  
Partnumber  
Marking  
Code  
Zener Voltage  
Dynamic Resistance  
Test  
Current  
Temp.  
Coefficient  
Reverse Admissible Zener  
Range1)  
Current4)  
Voltage  
VZ @ IZT1  
rzj @ IZT1  
rzj @ IZT2  
IZT1  
@ IZT1  
VR @ IR  
IZ @  
IZ @  
=
Tamb  
=
Tamb =  
100 nA,  
45 °C,  
25 °C,  
V
mA  
αVZ  
V
mA  
(10-4/°C)  
min  
2.35  
2.65  
2.94  
3.23  
3.53  
3.82  
4.21  
4.61  
5
max  
2.45  
2.75  
3.06  
3.37  
3.67  
3.98  
4.39  
4.79  
5.2  
BZT52B2V4-V  
BZT52B2V7-V  
BZT52B3V0-V  
BZT52B3V3-V  
BZT52B3V6-V  
BZT52B3V9-V  
BZT52B4V3-V  
BZT52B4V7-V  
BZT52B5V1-V  
BZT52B5V6-V  
BZT52B6V2-V  
BZT52B6V8-V  
BZT52B7V5-V  
BZT52B8V2-V  
BZT52B9V1-V  
BZT52B10-V  
BZT52B11-V  
BZT52B12-V  
BZT52B13-V  
BZT52B15-V  
BZT52B16-V  
BZT52B18-V  
BZT52B20-V  
BZT52B22-V  
BZT52B24-V  
BZT52B27-V  
BZT52B30-V  
BZT52B33-V  
BZT52B36-V  
BZT52B39-V  
BZT52B43-V  
BZT52B47-V  
BZT52B51-V  
BZT52B56-V  
W1  
W2  
W3  
W4  
W5  
W6  
W7  
W8  
W9  
WA  
WB  
WC  
WD  
WE  
WF  
WG  
WH  
WI  
85  
600  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5  
- 9 to - 4  
- 9 to - 4  
-
-
-
113  
98  
92  
85  
77  
71  
64  
56  
50  
45  
41  
37  
34  
30  
28  
25  
23  
21  
19  
17  
15  
14  
13  
11  
10  
9
-
134  
118  
109  
100  
92  
84  
76  
67  
59  
54  
49  
44  
40  
36  
33  
30  
28  
25  
23  
20  
18  
17  
16  
13  
12  
10  
9
75 (< 83)  
80 (< 95)  
80 (< 95)  
80 (< 95)  
80 (< 95)  
80 (< 95)  
70 (< 78)  
30 (< 60)  
10 (< 40)  
4.8 (< 10)  
4.5 (< 8)  
4 (< 7)  
< 500  
< 500  
< 500  
< 500  
< 500  
< 500  
< 500  
< 480  
< 400  
< 200  
< 150  
< 50  
- 9 to - 3  
-
- 8 to - 3  
-
- 8 to - 3  
-
- 7 to - 3  
-
- 6 to - 1  
-
- 5 to + 2  
- 3 to + 4  
- 2 to + 6  
-
> 0.8  
> 1  
> 2  
> 3  
> 5  
> 6  
> 7  
> 7.5  
> 8.5  
> 9  
> 10  
> 11  
> 12  
> 14  
> 15  
> 17  
> 18  
> 20  
> 22.5  
> 25  
> 27  
> 29  
> 32  
> 35  
> 38  
-
5.49  
6.08  
6.66  
7.35  
8.04  
8.92  
9.8  
5.71  
6.32  
6.94  
7.65  
8.36  
9.28  
10.2  
11.2  
12.2  
13.3  
15.3  
16.3  
18.4  
20.4  
22.4  
24.5  
27.5  
30.6  
33.7  
36.7  
39.8  
43.9  
47.9  
52  
- 1 to + 7  
+ 2 to + 7  
+ 3 to + 7  
+ 4 to + 7  
+ 5 to + 8  
+ 5 to + 8  
+ 5 to + 9  
+ 6 to + 9  
+ 7 to + 9  
+ 7 to + 9  
+ 8 to + 9.5  
+ 8 to + 9.5  
+ 8 to + 10  
+ 8 to + 10  
+ 8 to + 10  
+ 8 to + 10  
+ 8 to + 10  
+ 8 to + 10  
+ 8 to + 10  
+ 10 to + 12  
+ 10 to + 12  
+ 10 to + 12  
+ 10 to + 12  
4.5 (< 7)  
4.8 (< 10)  
5.2 (< 15)  
6 (< 20)  
< 50  
< 50  
< 70  
10.8  
11.8  
12.7  
14.7  
15.7  
17.6  
19.6  
21.6  
23.5  
26.5  
29.4  
32.3  
35.3  
38.2  
42.1  
46.1  
50  
< 70  
7 (< 20)  
< 90  
WK  
WL  
WM  
WN  
WO  
WP  
WR  
WS  
WT  
WU  
WW  
WX  
WY  
WZ  
X1  
9 (< 25)  
< 110  
< 110  
< 170  
< 170  
< 220  
< 220  
< 220  
< 250  
< 250  
< 250  
< 250  
< 300  
< 700  
< 750  
< 750  
11 (< 30)  
13 (< 40)  
18 (< 50)  
20 (< 50)  
25 (< 55)  
28 (< 80)  
30 (< 80)  
35 (< 80)  
40 (< 80)  
40 (< 90)  
50 (< 90)  
60 (< 100)  
70 (< 100)  
70 (< 100)  
8
8
9
7
8
6
7
5
6
5
6
< 135(2)  
< 150(2)  
< 200(2)  
< 250(2)  
< 1000(3)  
< 1000(3)  
< 1000(3)  
< 1500(3)  
typ. + 10(2)  
typ. + 10(2)  
typ. + 10(2)  
typ. + 10(2)  
X2  
54.9  
57.1  
-
-
BZT52B62-V  
BZT52B68-V  
BZT52B75-V  
X3  
X4  
X5  
60.8  
66.6  
73.5  
63.2  
69.4  
76.5  
2.5  
2.5  
2.5  
-
-
-
-
-
-
-
-
-
IZT1 = 5 mA, IZT2 = 1 mA  
1) Measured with pulses Tp = 5 ms  
2) = IZT1 = 2.5 mA  
3) = IZT2 = 0.5 mA  
4) Valid provided that electrodes are kept at ambient temperature.  
Document Number 85760  
Rev. 1.5, 21-Apr-05  
www.vishay.com  
3
BZT52-V-Series  
Vishay Semiconductors  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
18117  
18114  
Figure 1. Forward characteristics  
Figure 4. Dynamic Resistance vs. Zener Current  
18888  
18118  
Figure 2. Admissible Power Dissipation vs. Ambient Temperature  
Figure 5. Capacitance vs. Zener Voltage  
°C  
18119  
18116  
Figure 3. Pulse Thermal Resistance vs. Pulse Duration  
Figure 6. Dynamic Resistance vs. Zener Current  
www.vishay.com  
4
Document Number 85760  
Rev. 1.5, 21-Apr-05  
BZT52-V-Series  
Vishay Semiconductors  
°C  
18135  
18120  
,
=
Figure 7. Dynamic Resistance vs. Zener Current  
Figure 10. Temperature Dependence of Zener Voltage vs. Zener  
Voltage  
°C/W  
18124  
18121  
Figure 8. Thermal Differential Resistance vs. Zener Voltage  
Figure 11. Change of Zener Voltage vs. Junction Temperature  
°C  
18122  
18136  
Figure 9. Dynamic Resistance vs. Zener Voltage  
Figure 12. Temperature Dependence of Zener Voltage vs. Zener  
Voltage  
Document Number 85760  
Rev. 1.5, 21-Apr-05  
www.vishay.com  
5
BZT52-V-Series  
Vishay Semiconductors  
18158  
Figure 13. Change of Zener Voltage vs. Junction Temperature  
18159  
Figure 14. Change of Zener voltage from turn-on up to the point of  
thermal equilibrium vs. Zener voltage  
18160  
Figure 15. Change of Zener voltage from turn-on up to the point of  
thermal equilibrium vs. Zener voltage  
www.vishay.com  
6
Document Number 85760  
Rev. 1.5, 21-Apr-05  
BZT52-V-Series  
Vishay Semiconductors  
18111  
Figure 16. Breakdown Characteristics  
18112  
Figure 17. Breakdown Characteristics  
Document Number 85760  
Rev. 1.5, 21-Apr-05  
www.vishay.com  
7
BZT52-V-Series  
Vishay Semiconductors  
18157  
Figure 18. Breakdown Characteristics  
Package Dimensions in mm (Inches)  
1.35 (0.053) max.  
0.25 (0.010) min.  
0.15 (0.006) max.  
ISO Method E  
0.1 (0.004) max.  
0.55 (0.022)  
Mounting Pad Layout  
Cathode Band  
1.40 (0.055)  
0.72 (0.028)  
1.70 (0.067)  
1.40 (0.055)  
17432  
www.vishay.com  
8
Document Number 85760  
Rev. 1.5, 21-Apr-05  
BZT52-V-Series  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as  
their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Document Number 85760  
Rev. 1.5, 21-Apr-05  
www.vishay.com  
9
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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VISHAY

BZT52B9V1-V-G08

DIODE 9.1 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Voltage Regulator Diode
VISHAY

BZT52B9V1-V-G18

DIODE 9.1 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Voltage Regulator Diode
VISHAY

BZT52B9V1BS

400 mW Zener Diode 3.0 to 51 Volts
MCC

BZT52B9V1JS

200 mW Zener Diode 3.0 to 75 Volts
MCC

BZT52B9V1L

Zener Diode
BL Galaxy Ele

BZT52B9V1LS

200 mW Zener Diode 2.4~75 Volts
MCC

BZT52B9V1Q

Small Signal Zener Diodes
YANGJIE

BZT52B9V1R13

Zener Diode,
DIOTEC

BZT52B9V1S

200mW, 2% Tolerance SMD Zener Diode
TSC

BZT52B9V1S

SURFACE MOUNT ZENER DIODE VOLTAGE RANGE 3 to 39 Volts POWER RATING 410 mWatts
RECTRON

BZT52B9V1S

暂无描述
LGE