BZT55B5V1 [VISHAY]
Small Signal Zener Diodes; 小信号齐纳二极管
| 型号： | BZT55B5V1 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Zener Diodes |
| 文件： | 总8页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZT55-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Very sharp reverse characteristic
• Low reverse current level
• Available with tighter tolerances
• Very high stability
e2
• Low noise
9612009
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Voltage stabilization
Mechanical Data
Case: QuadroMELF Glass case SOD80
Weight: approx. 34 mg
Packaging Codes/Options:
GS08 / 2.5 k per 7" reel 12.5 k/box
GS18 / 10 k per 13" reel 10 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Power dissipation
Test condition
Symbol
PV
Value
500
Unit
mW
RthJA ≤ 300 K/W
Z-current
IZ
Tj
PV/VZ
175
mA
°C
Junction temperature
Storage temperature range
Tstg
- 65 to + 175
°C
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
RthJA
Value
500
Unit
K/W
Junction to ambient air
on PC board
50 mm x 50 mm x 1.6 mm
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
IF = 200 mA
Symbol
VF
Min
Typ.
Max
1.5
Unit
V
Forward voltage
Document Number 85637
Rev. 1.5, 10-Mar-06
www.vishay.com
1
BZT55-Series
Vishay Semiconductors
Electrical Characteristics
BZT55C..
Zener Voltage1)
Partnumber
Dynamic
Resistance
Test
Current
Temperature
Coefficient
Test
Current
Reverse Leakage Current
VZ at IZT
rzj at
IZT
TKVZ
IZK
IR at
IR at
at VR
IZT
,
Tamb
Tamb
f = 1 kHz
= 25°C = 150 °C
µA
V
Ω
mA
%/K
mA
V
min
2.28
2.5
2.8
3.1
3.4
3.7
4
max
2.56
2.9
3.2
3.5
3.8
4.1
4.6
5
min
- 0.09
- 0.09
- 0.08
- 0.08
- 0.08
- 0.08
- 0.06
- 0.05
- 0.02
- 0.05
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
max
BZT55C2V4
BZT55C2V7
BZT55C3V0
BZT55C3V3
BZT55C3V6
BZT55C3V9
BZT55C4V3
BZT55C4V7
BZT55C5V1
BZT55C5V6
BZT55C6V2
BZT55C6V8
BZT55C7V5
BZT55C8V2
BZT55C9V1 *
BZT55C10 *
BZT55C11 *
BZT55C12 *
BZT55C13 *
BZT55C15 *
BZT55C16 *
BZT55C18 *
BZT55C20 *
BZT55C22 *
BZT55C24 *
BZT55C27 *
BZT55C30 *
BZT55C33 *
BZT55C36 *
BZT55C39 *
BZT55C43 *
BZT55C47 *
BZT55C51 *
BZT55C56 *
BZT55C62 *
BZT55C68 *
BZT55C75 *
< 85
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
5
5
- 0.06
- 0.06
- 0.05
- 0.05
- 0.05
- 0.05
- 0.03
0.02
0.02
0.05
0.06
0.07
0.07
0.08
0.09
0.1
1
1
< 50
< 10
< 4
< 100
< 50
< 40
< 40
< 40
< 40
< 20
< 10
< 2
1
1
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
< 8
5
1
1
5
1
< 2
1
5
1
< 2
1
5
1
< 2
1
5
1
< 1
1
4.4
4.8
5.2
5.8
6.4
7
5
1
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
1
5.4
6
5
1
1
5
1
< 2
1
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
5
1
< 2
2
5
1
< 2
3
< 7
5
1
< 2
5
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
< 7
< 50
5
1
< 2
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
< 110
< 125
< 135
< 150
< 200
< 250
< 50
5
1
< 2
< 70
5
1
< 2
< 70
5
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
1
< 2
< 90
5
1
< 2
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
31
35
5
1
< 2
34
38
5
1
< 2
37
41
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
< 5
40
46
< 5
44
50
< 5
48
54
< 10
< 10
< 10
< 10
< 10
52
60
58
66
64
72
70
79
1) tp ≤ 10 ms, T/tp > 1000
*) Additionnal measurement of Voltage group 9V1 to 75 at 95 % Vzmin ≤ 35 nA at Tj 25 °C
www.vishay.com
2
Document Number 85637
Rev. 1.5, 10-Mar-06
BZT55-Series
Vishay Semiconductors
Electrical Characteristics
BZT55B..
Zener Voltage1)
Partnumber
Dynamic
Resistance
Test
Current
Temperature
Coefficient of
Zener Voltage
Test
Current
Reverse Leakage Current
VZ at IZT
rzj at
IZT
TKVZ
IZK
IR at
Tamb
IR at
Tamb
at VR
IZT
,
f = 1 kHz
= 25°C = 150 °C
µA V
V
Ω
mA
%/K
mA
min
2.35
2.64
2.94
3.24
3.52
3.82
4.22
4.6
max
2.45
2.76
3.06
3.36
3.68
3.98
4.38
4.8
min
- 0.09
- 0.09
- 0.08
- 0.08
- 0.08
- 0.08
- 0.06
- 0.05
- 0.02
- 0.05
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
max
- 0.06
- 0.06
- 0.05
- 0.05
- 0.05
- 0.05
- 0.03
0.02
0.02
0.05
0.06
0.07
0.07
0.08
0.09
0.1
BZT55B2V4
BZT55B2V7
BZT55B3V0
BZT55B3V3
BZT55B3V6
BZT55B3V9
BZT55B4V3
BZT55B4V7
BZT55B5V1
BZT55B5V6
BZT55B6V2
BZT55B6V8
BZT55B7V5
BZT55B8V2
BZT55B9V1 *
BZT55B10 *
BZT55B11 *
BZT55B12 *
BZT55B13 *
BZT55B15 *
BZT55B16 *
BZT55B18 *
BZT55B20 *
BZT55B22 *
BZT55B24 *
BZT55B27 *
BZT55B30 *
BZT55B33 *
BZT55B36 *
BZT55B39 *
BZT55B43 *
BZT55B47 *
BZT55B51 *
BZT55B56 *
BZT55B62 *
BZT55B68 *
BZT55B75 *
< 85
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
5
5
1
1
< 50
< 10
< 4
< 100
< 50
< 40
< 40
< 40
< 40
< 20
< 10
< 2
1
1
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
< 8
5
1
1
5
1
< 2
1
5
1
< 2
1
5
1
< 2
1
5
1
< 1
1
5
1
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
1
5
5.2
5
1
1
5.48
6.08
6.66
7.35
8.04
8.92
9.8
5.72
6.32
6.94
7.65
8.36
9.28
10.2
11.22
12.24
13.26
15.3
16.3
18.36
20.4
22.45
24.5
27.6
30.6
33.6
36.7
39.8
43.9
47.9
52
5
1
< 2
1
5
1
< 2
2
5
1
< 2
3
< 7
5
1
< 2
5
< 7
< 50
5
1
< 2
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
< 110
< 125
< 135
< 150
< 200
< 250
< 50
5
1
< 2
< 70
5
1
< 2
10.78
11.76
12.74
14.7
15.7
17.64
19.6
21.55
23.5
26.4
29.4
32.4
35.3
38.2
42.1
46.1
50
< 70
5
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
1
< 2
< 90
5
1
< 2
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
1
< 5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
< 5
< 5
< 10
< 10
< 10
< 10
< 10
54.9
60.8
66.6
73.5
57.1
63.2
69.4
76.5
1) tp ≤ 10 ms, T/tp > 1000
*) Additionnal measurement of Voltage group 9V1 to 75 at 95 % Vzmin ≤ 35 nA at Tj 25 °C
Document Number 85637
Rev. 1.5, 10-Mar-06
www.vishay.com
3
BZT55-Series
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
15
10
600
500
400
300
200
5
IZ = 5 mA
0
100
0
- 5
200
0
80
Tamb - Ambient Temperature (°C)
Figure 1. Total Power Dissipation vs. Ambient Temperature
120
160
50
40
10
20
VZ - Z-Voltage (V)
0
30
40
95 9602
95 9600
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
200
1000
Tj = 25 °C
100
150
VR = 2 V
Tj = 25 °C
100
IZ = 5 mA
10
50
0
1
25
0
10
15
20
5
25
0
10
15
20
5
VZ - Z-Voltage (V)
95 9598
95 9601
VZ - Z-Voltage (V)
Figure 2. Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
Figure 5. Diode Capacitance vs. Z-Voltage
100
10
1.3
VZtn = VZt/VZ (25 °C)
1.2
1.1
TKVZ = 10 x 10-4/K
8 x 10-4/K
Tj = 25 °C
6 x 10-4/K
1
4 x 10-4/K
2 x 10-4/K
0
0.1
0.01
1.0
0.9
0.8
- 2 x 10-4/K
- 4 x 10-4/K
0.001
1.0
0
0.2
VF - Forward Voltage (V)
Figure 6. Forward Current vs. Forward Voltage
0.4
0.6
0.8
240
0
- 60
60
120
180
95 9605
95 9599
Tj - Junction Temperature (°C)
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
www.vishay.com
4
Document Number 85637
Rev. 1.5, 10-Mar-06
BZT55-Series
Vishay Semiconductors
1000
100
10
100
80
IZ = 1 mA
Ptot = 500 mW
Tamb = 25 °C
60
5 mA
40
20
0
10 mA
Tj = 25 °C
15 20
1
25
0
5
10
12
20
0
4
6
8
95 9606
VZ - Z-Voltage (V)
95 9604
VZ - Z-Voltage (V)
Figure 7. Z-Current vs. Z-Voltage
Figure 9. Differential Z-Resistance vs. Z-Voltage
50
Ptot = 500 mW
Tamb = 25 °C
40
30
20
10
0
35
15
20
25
30
95 9607
VZ - Z-Voltage (V)
Figure 8. Z-Current vs. Z-Voltage
1000
tP/T = 0.5
100
tP/T = 0.2
Single Pulse
RthJA = 300 K/W
T = Tjmax - Tamb
10
tP/T = 0.01
tP/T = 0.1
tP/T = 0.02
tP/T = 0.05
iZM = (- VZ + (VZ2 + 4rzj x T/Zthp 1/2)/(2rzj)
)
1
10-1
100
101
102
95 9603
tP - Pulse Length (ms)
Figure 10. Thermal Response
Document Number 85637
Rev. 1.5, 10-Mar-06
www.vishay.com
5
BZT55-Series
Vishay Semiconductors
Package Dimensions in mm (Inches)
12071
www.vishay.com
6
Document Number 85637
Rev. 1.5, 10-Mar-06
BZT55-Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85637
Rev. 1.5, 10-Mar-06
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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