BZX384B12-GS18 [VISHAY]
Zener Diode, 12V V(Z), 2%, 0.2W, Silicon, Unidirectional, PLASTIC PACKAGE-2;型号: | BZX384B12-GS18 |
厂家: | VISHAY |
描述: | Zener Diode, 12V V(Z), 2%, 0.2W, Silicon, Unidirectional, PLASTIC PACKAGE-2 |
文件: | 总9页 (文件大小:236K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BZX384-Series
Vishay Semiconductors
VISHAY
Small Signal Zener Diodes
Features
• Silicon Planar Power Zener Diodes
• The Zener voltages are graded according to the
international E 24 standard.
• Standard Zener voltage tolerance is ± 5 %.
Replace "C" with "B" for ± 2 % tolerance.
17431
Mechanical Data
Case: SOD-323 Plastic case
Weight: approx. 5.0 mg
Packaging Codes/Options:
GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box
GS08 / 3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
Unit
mW
1)
Power dissipation
P
tot
200
1)
Device on fiberglass substrate
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
Unit
1)
Thermal resistance junction to
ambient air
R
°C/W
thJA
650
Junction temperature
T
150
°C
°C
j
Storage temperature range
T
- 65 to + 150
S
1)
Valid that electrodes are kept at ambient temperature
Document Number 85764
Rev. 1.5, 08-Jul-04
www.vishay.com
1
BZX384-Series
Vishay Semiconductors
VISHAY
Electrical Characteristics
Partnumber
Marki Zener Voltage
Dynamic Resistance
Test
Temperature
Test
Reverse Leakage
Current
ng
Range
Curre Coefficient of Curre
Code
nt
Zener Voltage
nt
@I
V
@ I
V
r
@ I
Ω
r
@ I
Ω
I
α
@ I
I
V
R
Z
ZT
zj
ZT1
zj
ZT2
ZT1
VZ
ZT1
ZT2
R
-4
mA
mA
µA
V
10 /°C
min
2.2
2.5
2.8
3.1
3.4
3.7
4
max
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5
typ
typ
min
-9
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
max
-4
-4
-3
-3
-3
-3
-1
2
BZX384C2V4
BZX384C2V7
BZX384C3
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
70 (≤100)
75 (≤100)
80 (≤95)
85 (≤95)
85 (≤90)
85 (≤90)
80 (≤90)
50 (≤80)
40 (≤60)
15 (≤40)
6.0 (≤10)
6.0 (≤15)
6.0 (≤15)
6.0 (≤15)
6.0 (≤15)
8.0 (≤20)
10 (≤20)
10 (≤25)
10 (≤30)
10 (≤30)
275
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
50
20
10
5
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
300 (≤600)
325 (≤600)
350 (≤600)
375 (≤600)
400 (≤600)
410 (≤600)
425 (≤500)
400 (≤480)
80 (≤400)
40 (≤150)
30 (≤80)
BZX384C3V3
BZX384C3V6
BZX384C3V9
BZX384C4V3
BZX384C4V7
BZX384C5V1
BZX384C5V6
BZX384C6V2
BZX384C6V8
BZX384C7V5
BZX384C8V2
BZX384C9V1
BZX384C10
BZX384C11
BZX384C12
BZX384C13
BZX384C15
5
3
3
4.4
4.8
5.2
5.8
6.4
7
3
5.4
6
4
2
6
1
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
7
3
7
2
30 (≤80)
3
7
1
7.7
8.5
9.4
10.4
11.4
12.4
13.8
40 (≤80)
4
7
0.7
0.5
0.2
0.1
0.1
0.1
0.05
40 (≤100)
50 (≤150)
50 (≤150)
50 (≤150)
50 (≤170)
50 (≤200)
5
8
5
8
5
9
6
9
WK
WL
7
9
7
9
0.7V
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
BZX384C16
BZX384C18
BZX384C20
BZX384C22
BZX384C24
BZX384C27
BZX384C30
BZX384C33
BZX384C36
BZX384C39
BZX384C43
BZX384C47
BZX384C51
BZX384C56
BZX384C62
BZX384C68
BZX384C75
WM
WN
WO
WP
WR
WS
WT
WU
WW
WX
WY
WZ
X1
15.3
16.8
18.8
20.8
22.8
25.1
28
17.1
19.1
21.2
23.3
25.6
28.9
32
10 (≤40)
10 (≤45)
15 (≤55)
20 (≤55)
25 (≤70)
25 (≤80)
30 (≤80)
35 (≤80)
35 (≤90)
40 (≤130)
45 (≤150)
50 (≤170)
60 (≤180)
70 (≤200)
80 (≤215)
90 (≤240)
95 (≤255)
50 (≤200)
50 (≤225)
60 (≤225)
60 (≤250)
60 (≤250)
65 (≤300)
70 (≤300)
75 (≤325)
80 (≤350)
80 (≤350)
85 (≤375)
85 (≤375)
85 (≤400)
100 (≤425)
100 (≤450)
150 (≤475)
170 (≤500)
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
8
8
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
11
12
12
12
1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
1
8
1
8
1
8
1
8
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
8
31
35
8
34
38
8
37
41
10
10
10
10
9
40
46
44
50
48
54
X2
52
60
X3
58
66
9
X4
64
72
10
10
X5
70
79
(1)
Measured with pulses t = 5 ms
p
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2
Document Number 85764
Rev. 1.5, 08-Jul-04
BZX384-Series
Vishay Semiconductors
VISHAY
Electrical Characteristics
Partnumber
Marki Zener Voltage
Dynamic Resistance
Test
Temperature
Test
Reverse Leakage
Current
ng
Range
Curre Coefficient of Curre
Code
nt
Zener Voltage
nt
@I
V
@ I
V
r
@ I
Ω
r
@ I
Ω
I
α
@ I
I
V
R
Z
ZT
zj
ZT1
zj
ZT2
ZT1
VZ
ZT1
ZT2
R
-4
mA
mA
µA
V
10 /°C
min
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.8
11.8
12.7
14.7
max
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
typ
typ
min
-9
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
max
-4
-4
-3
-3
-3
-3
-1
2
BZX384B2V4
BZX384B2V7
BZX384B3
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
70 (≤100)
75 (≤100)
80 (≤95)
85 (≤95)
85 (≤90)
85 (≤90)
80 (≤90)
50 (≤80)
40 (≤60)
15 (≤40)
6.0 (≤10)
6.0 (≤15)
6.0 (≤15)
6.0 (≤15)
6.0 (≤15)
8.0 (≤20)
10 (≤20)
10 (≤25)
10 (≤30)
10 (≤30)
275
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
50
20
10
5
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
300 (≤600)
325 (≤600)
350 (≤600)
375 (≤600)
400 (≤600)
410 (≤600)
425 (≤500)
400 (≤480)
80 (≤400)
40 (≤150)
30 (≤80)
BZX384B3V3
BZX384B3V6
BZX384B3V9
BZX384B4V3
BZX384B4V7
BZX384B5V1
BZX384B5V6
BZX384B6V2
BZX384B6V8
BZX384B7V5
BZX384B8V2
BZX384B9V1
BZX384B10
BZX384B11
BZX384B12
BZX384B13
BZX384B15
5
3
3
3
4
2
6
1
7
3
7
2
30 (≤80)
3
7
1
40 (≤80)
4
7
0.7
0.5
0.2
0.1
0.1
0.1
0.05
40 (≤100)
50 (≤150)
50 (≤150)
50 (≤150)
50 (≤170)
50 (≤200)
5
8
5
8
5
9
6
9
WK
WL
7
9
7
9
0.7V
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
BZX384B16
BZX384B18
BZX384B20
BZX384B22
BZX384B24
BZX384B27
BZX384B30
BZX384B33
BZX384B36
BZX384B39
BZX384B43
BZX384B47
BZX384B51
BZX384B56
BZX384B62
BZX384B68
BZX384B75
WM
WN
WO
WP
WR
WS
WT
WU
WW
WX
WY
WZ
X1
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50.0
54.9
60.8
66.6
73.5
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52.0
57.1
63.2
69.4
76.5
10 (≤40)
10 (≤45)
15 (≤55)
20 (≤55)
25 (≤70)
25 (≤80)
30 (≤80)
35 (≤80)
35 (≤90)
40 (≤130)
45 (≤150)
50 (≤170)
60 (≤180)
70 (≤200)
80 (≤215)
90 (≤240)
95 (≤255)
50 (≤200)
50 (≤225)
60 (≤225)
60 (≤250)
60 (≤250)
65 (≤300)
70 (≤300)
75 (≤325)
80 (≤350)
80 (≤350)
85 (≤375)
85 (≤375)
85 (≤400)
100 (≤425)
100 (≤450)
150 (≤475)
170 (≤500)
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
8
8
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
11
12
12
12
1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
1
8
1
8
1
8
1
8
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
8
8
8
10
10
10
10
9
X2
X3
9
X4
10
10
X5
Document Number 85764
Rev. 1.5, 08-Jul-04
www.vishay.com
3
BZX384-Series
Vishay Semiconductors
VISHAY
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
18117
18114
Figure 1. Forward characteristics
Figure 4. Dynamic Resistance vs. Zener Current
250
200
150
100
50
18192
18193
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
Figure 5. Capacitance vs. Zener Voltage
°C
18119
18116
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
Figure 6. Dynamic Resistance vs. Zener Current
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4
Document Number 85764
Rev. 1.5, 08-Jul-04
BZX384-Series
Vishay Semiconductors
VISHAY
°C
18135
18120
,
=
Figure 7. Dynamic Resistance vs. Zener Current
Figure 10. Temperature Dependence of Zener Voltage vs. Zener
Voltage
°C/W
18124
18121
Figure 8. Thermal Differential Resistance vs. Zener Voltage
Figure 11. Change of Zener Voltage vs. Junction Temperature
18122
18194
Figure 9. Dynamic Resistance vs. Zener Voltage
Figure 12. Change of Zener Voltage vs. Junction Temperature
Document Number 85764
Rev. 1.5, 08-Jul-04
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5
BZX384-Series
Vishay Semiconductors
VISHAY
ı C
18195
Figure 13. Temperature Dependence of Zener Voltage vs. Zener
Voltage
18196
Figure 14. Change of Zener voltage from turn-on up to the point of
thermal equilibrium vs. Zener voltage
18160
Figure 15. Change of Zener voltage from turn-on up to the point of
thermal equilibrium vs. Zener voltage
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6
Document Number 85764
Rev. 1.5, 08-Jul-04
BZX384-Series
Vishay Semiconductors
VISHAY
18111
Figure 16. Breakdown Characteristics
18112
Figure 17. Breakdown Characteristics
Document Number 85764
Rev. 1.5, 08-Jul-04
www.vishay.com
7
BZX384-Series
Vishay Semiconductors
VISHAY
18191
Figure 18. Breakdown Characteristics
Package Dimensions in mm (Inches)
1.25 (0.049) max.
0.15 (0.006) max.
0.25 (0.010) min.
0.1 (0.004) max.
0.3 (0.012)
Mounting Pad Layout
Cathode Band
ISO Method E
1.60 (0.062)
0.39 (0.015)
1.5 (0.059)
1.1 (0.043)
17443
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8
Document Number 85764
Rev. 1.5, 08-Jul-04
BZX384-Series
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85764
Rev. 1.5, 08-Jul-04
www.vishay.com
9
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