BZX55F12/TR [VISHAY]
DIODE 12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, GLASS PACKAGE-2, Voltage Regulator Diode;
| 型号： | BZX55F12/TR |
| 厂家： | 
VISHAY |
| 描述： | DIODE 12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, GLASS PACKAGE-2, Voltage Regulator Diode |
| 文件： | 总7页 (文件大小：260K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZX55..Series
Vishay Semiconductors
VISHAY
Zener Diodes
\
Features
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
• Low noise
94 9367
• Available with tighter tolerances
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 130 mg
Applications
Voltage stabilization
Packaging Codes/Options:
TR / 10k per 13 " reel, 30k/box
TAP / 10k per Ammopack (52 mm tape), 30k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
l = 4 mm, TL = 25 °C
Symbol
PV
Value
500
Unit
mW
Power dissipation
Z-current
IZ
Tj
PV/VZ
175
mA
°C
Junction temperature
Storage temperature range
Tstg
- 65 to
+ 175
°C
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 4 mm, TL = constant
Symbol
RthJA
Value
300
Unit
K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
IF = 200 mA
Symbol
VF
Max
1.5
Unit
V
Forward voltage
Document Number 85604
Rev. 1, 21-Feb-03
www.vishay.com
1
BZX55..Series
Vishay Semiconductors
VISHAY
Electrical Characteristics
BZX55C..
Partnumber
Zener Voltage
Range1)
Dynamic
Resistance
Test
Current
Temperature
Coefficient
Test
Current
Reverse Leakage Current
VZ @ IZT
rzjT
@
rzjK
@
IZT
TKVZ
IZK
IR
@
IR
@
@ VR
IZT,
IZK
,
Tamb
=
Tamb
=
f = 1 kHz f = 1 kHz
25 °C
150 °C
V
Ω
mA
%/K
mA
µA
V
min
2.28
2.5
2.8
3.1
3.4
3.7
4
max
2.56
2.9
3.2
3.5
3.8
4.1
4.6
5
min
-0.09
-0.09
-0.08
-0.08
-0.08
-0.08
-0.06
-0.05
-0.02
-0.05
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
max
-0.06
-0.06
-0.05
-0.05
-0.05
-0.05
-0.03
0.02
0.02
0.05
0.06
0.07
0.07
0.08
0.09
0.1
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
BZX55C3V9
BZX55C4V3
BZX55C4V7
BZX55C5V1
BZX55C5V6
BZX55C6V2
BZX55C6V8
BZX55C7V5
BZX55C8V2
BZX55C9V1
BZX55C10
BZX55C11
BZX55C12
BZX55C13
BZX55C15
BZX55C16
BZX55C18
BZX55C20
BZX55C22
BZX55C24
BZX55C27
BZX55C30
BZX55C33
BZX55C36
BZX55C39
BZX55C43
BZX55C47
BZX55C51
BZX55C56
BZX55C62
BZX55C68
BZX55C75
< 85
< 85
< 85
< 85
< 85
< 85
< 75
< 60
< 35
<25
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
5
5
1
1
< 50
< 10
< 4
< 100
< 50
< 40
< 40
< 40
< 40
< 20
< 10
< 2
1
1
5
1
1
5
1
< 2
1
5
1
< 2
1
5
1
< 2
1
5
1
< 1
1
4.4
4.8
5.2
5.8
6.4
7
5
1
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
1
5.4
6
5
1
1
5
1
< 2
1
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
< 10
< 8
5
1
< 2
2
5
1
< 2
3
< 7
5
1
< 2
5
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
< 7
< 50
5
1
< 2
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
< 110
< 125
< 135
< 150
< 200
< 250
< 50
5
1
< 2
< 70
5
1
< 2
< 70
5
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
1
< 2
< 90
5
1
< 2
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
31
35
5
1
< 2
34
38
5
1
< 2
37
41
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
< 5
40
46
< 5
44
50
< 5
48
54
< 10
< 10
< 10
< 10
< 10
52
60
58
66
64
72
70
79
1) Tighter tolerances available on request:
BZX55A... 1% of VZnom, BZX55F... 3% of VZnom
www.vishay.com
2
Document Number 85604
Rev. 1, 21-Feb-03
BZX55..Series
Vishay Semiconductors
VISHAY
Electrical Characteristics
BZX55B..
Partnumber
Zener Voltage
Range1)
Dynamic
Resistance
Test
Current
Temperature
Coefficient
Test
Current
Reverse Leakage Current
VZ @ IZT
rzjT
@
rzjK
@
IZT
TKVZ
IZK
IR
@
IR
@
@ VR
IZT,
IZK
,
Tamb
=
Tamb
=
f = 1 kHz f = 1 kHz
25 °C
150 °C
V
Ω
mA
%/K
mA
µA
V
min
2.64
2.94
3.24
3.52
3.82
4.22
4.6
max
2.76
3.06
3.36
3.68
3.98
4.38
4.8
min
-0.09
-0.08
-0.08
-0.08
-0.08
-0.06
-0.05
-0.02
-0.05
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
max
-0.06
-0.05
-0.05
-0.05
-0.05
-0.03
0.02
0.02
0.05
0.06
0.07
0.07
0.08
0.09
0.1
BZX55B2V7
BZX55B3V0
BZX55B3V3
BZX55B3V6
BZX55B3V9
BZX55B4V3
BZX55B4V7
BZX55B5V1
BZX55B5V6
BZX55B6V2
BZX55B6V8
BZX55B7V5
BZX55B8V2
BZX55B9V1
BZX55B10
BZX55B11
BZX55B12
BZX55B13
BZX55B15
BZX55B16
BZX55B18
BZX55B20
BZX55B22
BZX55B24
BZX55B27
BZX55B30
BZX55B33
BZX55B36
BZX55B39
BZX55B43
BZX55B47
BZX55B51
BZX55B56
BZX55B62
BZX55B68
BZX55B75
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
< 8
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
5
5
1
1
< 10
< 4
< 50
< 40
< 40
< 40
< 40
< 20
< 10
< 2
1
1
5
1
< 2
1
5
1
< 2
1
5
1
< 2
1
5
1
< 1
1
5
1
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
1
5
5.2
5
1
1
5.48
6.08
6.66
7.35
8.04
8.92
9.8
5.72
6.32
6.94
7.65
8.36
9.28
10.2
11.22
12.24
13.26
15.3
16.3
18.36
20.4
22.45
24.5
27.6
30.6
33.6
36.7
39.8
43.9
47.9
52
5
1
< 2
1
5
1
< 2
2
5
1
< 2
3
< 7
5
1
< 2
5
< 7
< 50
5
1
< 2
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
< 110
< 125
< 135
< 150
< 200
< 250
< 50
5
1
< 2
< 70
5
1
< 2
10.78
11.76
12.74
14.7
15.7
17.64
19.6
21.55
23.5
26.4
29.4
32.4
35.3
38.2
42.1
46.1
50
< 70
5
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0,12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
1
< 2
< 90
5
1
< 2
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
5
1
< 2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
< 5
< 5
< 5
< 10
< 10
< 10
< 10
< 10
54.9
60.8
66.6
73
57.1
63.2
69.4
76.5
1) Tighter tolerances available on request:
BZX55A... 1% of VZnom, BZX55F... 3% of VZnom
Document Number 85604
Rev. 1, 21-Feb-03
www.vishay.com
3
BZX55..Series
Vishay Semiconductors
VISHAY
Typical Characteristics (T
= 25 °C unless otherwise specified)
amb
500
1.3
V
=V /V (25°C)
Ztn Zt Z
400
300
1.2
1.1
–4
TK =10 x 10 /K
VZ
–4
8 x 10 /K
–4
6 x 10 /K
–4
4 x 10 /K
l
l
–4
2 x 10 /K
0
200
100
0
1.0
0.9
0.8
–4
–2 x 10 /K
–4
–4 x 10 /K
T =constant
L
20
240
0
5
10
15
–60
0
60
120
180
l – Lead Length ( mm )
T – Junction Temperature (°C )
j
95 9611
95 9599
Figure 1. Thermal Resistance vs. Lead Length
Figure 4. Typical Change of Working Voltage vs. Junction
Temperature
600
15
10
500
400
300
200
5
I =5mA
Z
0
100
0
–5
200
50
0
40
80
120
160
0
10
20
30
40
T
amb
– Ambient Temperature(°C )
V – Z-Voltage ( V )
Z
95 9602
95 9600
Figure 2. Total Power Dissipation vs. Ambient Temperature
Figure 5. Temperature Coefficient of Vz vs. Z-Voltage
1000
200
150
T =25°C
j
100
10
1
V =2V
R
T =25°C
j
100
I =5mA
Z
50
0
25
25
0
5
10
15
20
0
5
10
V – Z-Voltage ( V )
Z
15
20
V
– Z-Voltage ( V )
95 9598
95 9601
Z
Figure 3. Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
Figure 6. Diode Capacitance vs. Z-Voltage
www.vishay.com
4
Document Number 85604
Rev. 1, 21-Feb-03
BZX55..Series
Vishay Semiconductors
VISHAY
100
10
1
50
40
30
P
T
=500mW
=25°C
amb
tot
T =25°C
j
0.1
20
10
0
0.01
0.001
0
1.0
35
0.2
0.4
0.6
0.8
15
20
25
V – Z-Voltage ( V )
Z
30
V
– Forward Voltage ( V )
95 9605
95 9607
F
Figure 7. Forward Current vs. Forward Voltage
Figure 9. Z-Current vs. Z-Voltage
100
1000
100
10
80
60
I =1mA
Z
P
T
=500mW
=25°C
amb
tot
5mA
10mA
40
20
0
T =25°C
j
1
20
25
0
4
8
12
16
0
5
10
15
20
V
– Z-Voltage ( V )
V – Z-Voltage ( V )
Z
95 9604
95 9606
Z
Figure 8. Z-Current vs. Z-Voltage
Figure 10. Differential Z-Resistance vs. Z-Voltage
1000
100
10
t /T=0.5
p
t /T=0.2
p
Single Pulse
R
T=T
=300K/W
–T
jmax amb
thJA
t /T=0.01
p
t /T=0.1
p
t /T=0.02
p
t /T=0.05
p
2
1/2
x
i
=(–V +(V +4r
T/Z )
thp
)/(2r )
zj
ZM
Z
Z
zj
1
10
–1
0
1
2
10
10
– Pulse Length ( ms )
10
t
p
95 9603
Figure 11. Thermal Response
Document Number 85604
Rev. 1, 21-Feb-03
www.vishay.com
5
BZX55..Series
Vishay Semiconductors
VISHAY
Package Dimensions in mm
Cathode Identification
∅0.55 max.
technical drawings
according to DIN
specifications
∅1.7 max.
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
26 min.
3.9 max.
26 min.
Weight max. 0.3g
www.vishay.com
6
Document Number 85604
Rev. 1, 21-Feb-03
BZX55..Series
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85604
Rev. 1, 21-Feb-03
www.vishay.com
7
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