BZX84B43 [VISHAY]
Small Signal Zener Diodes; 小信号齐纳二极管型号: | BZX84B43 |
厂家: | VISHAY |
描述: | Small Signal Zener Diodes |
文件: | 总8页 (文件大小:114K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BZX84-Series
Vishay Semiconductors
www.vishay.com
Small Signal Zener Diodes
FEATURES
• Silicon planar Zener diodes
3
• The Zener voltages are graded according to the
international E24 standard. Standard Zener
voltage tolerance is 5 %, indicated by the “C”
in the ordering code. Replace “C” with “B” for
2 % tolerance.
1
2
20421
• AEC-Q101 qualified
• ESD capability acc. to AEC-Q101:
human body model: > 8 kV,
machine model: > 800 V
PRIMARY CHARACTERISTICS
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
PARAMETER
VALUE
UNIT
VZ range nom.
Test current IZT
VZ specification
Int. construction
2.4 to 75
2; 5
V
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
mA
Pulse current
Single
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
BZX84C2V4-E3-08 to BZX84C75-E3-08
BZX84B2V4-E3-08 to BZX84B75-E3-08
BZX84C2V4-HE3-08 to BZX84C75-HE3-08
BZX84B2V4-HE3-08 to BZX84B75-HE3-08
BZX84C2V4-E3-18 to BZX84C75-E3-18
BZX84B2V4-E3-18 to BZX84B75-E3-18
BZX84C2V4-HE3-18 to BZX84C75-HE3-18
BZX84B2V4-HE3-18 to BZX84B75-HE3-18
3000 (8 mm tape on 7" reel)
15 000
BZX84-series
10 000 (8 mm tape on 13" reel)
10 000
PACKAGE
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
PACKAGE NAME
WEIGHT
SOLDERING CONDITIONS
LEVEL
MSL level 1
(according J-STD-020)
SOT-23
8.8 mg
UL 94 V-0
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Tamb = 25 °C, device on fiberglass substrate,
acc. layout on page 7
Power dissipation
Ptot
300
mW
T
amb = 25 °C, device on fiberglass substrate,
Thermal resistance junction to ambient air
RthJA
420
K/W
acc. layout on page 7
Tj
Junction temperature
150
°C
°C
°C
Tstg
Top
Storage temperature range
Operating temperature range
- 65 to + 150
- 55 to + 150
Rev. 2.0, 28-Feb-13
Document Number: 85763
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-Series
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
REVERSE
LEAKAGE
CURRENT
DYNAMIC
RESISTANCE
f = 1 kHz
ZENER VOLTAGE
TEMPERATURE
COEFFICIENT
TEST CURRENT
RANGE
PART
NUMBER
MARKING
CODE
VZ at IZT1
V
IZT1
IZT2
IR at VR
ZZ at IZT1 ZZK at IZT2
VZ at IZT1
10-4/°C
mA
μA
V
MIN.
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
NOM. MAX.
MAX.
100
100
95
MAX.
275
600
600
600
600
600
600
500
480
400
150
80
MIN.
- 9
- 9
- 9
- 8
- 8
- 7
- 6
- 5
- 3
- 2
- 1
2
MAX.
- 4
- 4
- 3
- 3
- 3
- 3
- 1
2
BZX84C2V4
BZX84C2V7
BZX84C3V0
BZX84C3V3
BZX84C3V6
BZX84C3V9
BZX84C4V3
BZX84C4V7
BZX84C5V1
BZX84C5V6
BZX84C6V2
BZX84C6V8
BZX84C7V5
BZX84C8V2
BZX84C9V1
BZX84C10
BZX84C11
BZX84C12
BZX84C13
BZX84C15
BZX84C16
BZX84C18
BZX84C20
BZX84C22
BZX84C24
BZX84C27
BZX84C30
BZX84C33
BZX84C36
BZX84C39
BZX84C43
BZX84C47
BZX84C51
BZX84C56
BZX84C62
BZX84C68
BZX84C75
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z1
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
1
1
50
20
1
1
1
10
1
1
5
1
95
1
5
1
90
1
3
1
90
1
3
1
90
1
3
2
80
Z2
1
2
2
60
4
Z3
1
1
2
40
6
Z4
1
3
4
10
7
Z5
1
2
4
15
7
Z6
1
1
5
15
80
3
7
Z7
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
5
15
80
4
7
Z8
1
6
15
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
375
375
400
425
450
475
500
5
8
Z9
1
7
20
5
8
Y1
11
1
8
20
5
9
Y2
12
1
8
25
6
9
Y3
13
1
8
30
7
9
Y4
15
1
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
30
7
9
Y5
16
1
40
8
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
11
12
12
12
Y6
18
1
45
8
Y7
20
1
55
8
Y8
22
1
55
8
Y9
24
1
70
8
Y10
Y11
Y12
Y13
Y14
Y15
Y16
Y17
Y18
Y19
Y20
Y21
27
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
80
8
30
80
8
31
33
35
80
8
34
36
38
90
8
37
39
41
130
150
170
180
200
215
240
255
10
10
10
10
9
40
43
46
44
47
50
48
51
54
52
56
60
58
62
66
9
64
68
72
10
10
70
75
79
Rev. 2.0, 28-Feb-13
Document Number: 85763
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-Series
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
REVERSE
LEAKAGE
CURRENT
DYNAMIC
RESISTANCE
f = 1 kHz
ZENER VOLTAGE
TEMPERATURE
COEFFICIENT
TEST CURRENT
RANGE
PART
NUMBER
MARKING
CODE
VZ at IZT1
V
IZT1
IZT2
IR at VR
ZZ at IZT1 ZZK at IZT2
VZ at IZT1
10-4/°C
mA
μA
V
MIN.
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.0
NOM. MAX.
MAX.
100
100
95
MAX.
275
600
600
600
600
600
600
500
480
400
150
80
MIN.
- 9
- 9
- 9
- 8
- 8
- 7
- 6
- 5
- 3
- 2
- 1
2
MAX.
- 4
- 4
- 3
- 3
- 3
- 3
- 1
2
BZX84B2V4
BZX84B2V7
BZX84B3V0
BZX84B3V3
BZX84B3V6
BZX84B3V9
BZX84B4V3
BZX84B4V7
BZX84B5V1
BZX84B5V6
BZX84B6V2
BZX84B6V8
BZX84B7V5
BZX84B8V2
BZX84B9V1
BZX84B10
BZX84B11
BZX84B12
BZX84B13
BZX84B15
BZX84B16
BZX84B18
BZX84B20
BZX84B22
BZX84B24
BZX84B27
BZX84B30
BZX84B33
BZX84B36
BZX84B39
BZX84B43
BZX84B47
BZX84B51
BZX84B56
BZX84B62
BZX84B68
BZX84B75
Z50
Z51
Z52
Z53
Z54
Z55
Z56
Z57
Z58
Z59
Z60
Z61
Z62
Z63
Z64
Z65
Z66
Z67
Z68
Z69
Z70
Z71
Z72
Z73
Z74
Z75
Z76
Z77
Z78
Z79
Z80
Z81
Z82
Z83
Z84
Z85
Z86
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.2
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
1
1
50
20
1
1
1
10
1
1
5
1
95
1
5
1
90
1
3
1
90
1
3
1
90
1
3
2
80
1
2
2
60
4
5.49
6.08
6.66
7.35
8.04
8.92
9.8
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52
1
1
2
40
6
1
3
4
10
7
1
2
4
15
7
1
1
5
15
80
3
7
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
5
15
80
4
7
1
6
15
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
375
375
400
425
450
475
500
5
8
1
7
20
5
8
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50
11
1
8
20
5
9
12
1
8
25
6
9
13
1
8
30
7
9
15
1
10.5
11.2
12.6
14
15.4
16.8
18.9
21
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
30
7
9
16
1
40
8
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
11
12
12
12
18
1
45
8
20
1
55
8
22
1
55
8
24
1
70
8
27
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
80
8
30
80
8
33
80
8
36
90
8
39
130
150
170
180
200
215
240
255
10
10
10
10
9
43
47
51
54.9
60.8
66.6
73.5
56
57.1
63.2
69.4
76.5
62
9
68
10
10
75
Rev. 2.0, 28-Feb-13
Document Number: 85763
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-Series
Vishay Semiconductors
www.vishay.com
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
mA
Ω
103
102
10
100
TJ = 25 °C
5
4
IF
3
2
33
rzj
TJ = 100 °C
27
22
1
10-1
10-2
10
18
15
TJ = 25 °C
5
4
12
10-3
10-4
10-5
3
10
2
6.8/8.2
6.2
1
0
0.2
0.4
0.6
0.8
VF
1V
0.1
2
5
1
2
5
10
IZ
2
5 100 mA
18114
18119
Fig. 1 - Forward Characteristics
Fig. 4 - Dynamic Resistance vs. Zener Current
Ω
mW
500
103
Tj = 25 °C
7
5
4
400
Rzj
3
2
47 + 51
43
39
Ptot
36
300
200
102
7
5
4
3
100
0
2
10
0.1
2
3
4
5
1
2
3
4
5
10
mA
0
100
200 °C
18120
IZ
18115
Tamb
Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 5 - Dynamic Resistance vs. Zener Current
Ω
Ω
1000
103
ΔVZ
TJ = 25 °C
5
4
3
2
Rzth = RthA x VZ x
5
4
3
Δ
Tj
2
Rzth
rzj
102
100
5
4
3
5
4
3
2
2
10
5
4
3
10
5
4
3
2.7
3.6
4.7
5.1
negative
positive
10
2
2
5.6
1
1
1
2
3
4
5
2
3
4
5
100 V
0.1
18117
2
5
1
2
5
10
2
5 100 mA
18121
VZ at IZ = 5 mA
IZ
Fig. 3 - Dynamic Resistance vs. Zener Current
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
Rev. 2.0, 28-Feb-13
Document Number: 85763
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-Series
Vishay Semiconductors
www.vishay.com
Ω
100
mV/°C
100
7
IZ = 5 mA
5
4
ΔVZ
80
60
Rzj
3
2
Δ
Tj
10
7
40
20
5
4
3
2
T = 25 °C
IZj = 5 mA
0
1
0
20
40
60
80
100 V
1
2
3
4
5
10
2
3
4
5
100 V
18122
VZ
18125
VZ
Fig. 7 - Dynamic Resistance vs. Zener Voltage
Fig. 10 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
mV/°C
25
V
9
8
7
20
ΔVZ
5 mA
1 mA
20 mA
51
ΔV
IZ =
6
5
4
Z
Δ
Tj
15
10
43
36
3
2
5
0
1
0
I
= 2 mA
Z
- 1
- 5
1
2
3
4
5
10
VZ
2
3
4
5
100 V
0
60 80
140 °C
20 40
100 120
18123
18126
T
j
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
Fig. 11 - Change of Zener Voltage vs. Junction Temperature
V
V
0.8
1.6
25
15
ΔVZ = Rzth x IZ
0.7
VZ at IZ = 5 mA
1.4
10
1.2
0.6
0.5
0.4
ΔVZ
1
ΔVZ
8
0.8
0.6
7
0.3
0.2
0.1
6.2
5.9
0.4
0.2
5.6
5.1
0
- 1
0
- 0.2
- 0.4
4.7
3.6
- 0.2
1
2
3
4
5
10
2
3
4
5
100 V
100 120 140 C
Tj
0
20 40 60 80
18127
18124
VZ at IZ = 5 mA
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Rev. 2.0, 28-Feb-13
Document Number: 85763
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-Series
Vishay Semiconductors
www.vishay.com
mA
30
V
5
10
12
T = 25 °C
Δ
VZ = Rzth x IZ
j
4
3
2
l
Z
15
18
ΔVZ
20
IZ = 5 mA
22
27
Test
10
0
current
33
36
I
5 mA
Z
1
IZ = 2 mA
0
0
10
20
30
40 V
0
20
40
60
VZ
80
100 V
18112
18128
V
Z
Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Fig. 15 - Breakdown Characteristics
mA
50
mA
10
T = 25 °C
T = 25 °C
j
3.9
j
5.6
2.7
39
51
6.8
3.3 4.7
40
8
43
47
8.2
lZ
l
Test
Z
current
IZ 5 mA
30
20
6
4
Test
current
IZ 5 mA
10
0
2
0
0
1
2
3
4
5
6
7
8
9
10 V
0
10 20 30 40 50 60 70 80 90100 V
V
18113
V
Z
18111
Z
Fig. 14 - Breakdown Characteristics
Fig. 16 - Breakdown Characteristics
Rev. 2.0, 28-Feb-13
Document Number: 85763
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-Series
Vishay Semiconductors
www.vishay.com
LAYOUT FOR RthJA TEST
Thickness: fiberglass 0.059" (1.5 mm)
Copper leads 0.012" (0.3 mm)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
12 (0.47)
0.8 (0.03)
15 (0.59)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
3.1 (0.122)
2.8 (0.110)
0.550 ref. (0.022 ref.)
0.5 (0.020)
0.3 (0.012)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
2.6 (0.102)
2.35 (0.093)
0.45 (0.018)
0.35 (0.014)
Foot print recommendation:
0.7 (0.028)
1 (0.039)
0.9 (0.035)
1 (0.039)
0.9 (0.035)
0.95 (0.037)
0.95 (0.037)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
Rev. 2.0, 28-Feb-13
Document Number: 85763
7
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
Document Number: 91000
1
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