BZX84B4V7-G [VISHAY]
Silicon planar Zener diodes;
| 型号： | BZX84B4V7-G |
| 厂家： | 
VISHAY |
| 描述： | Silicon planar Zener diodes |
| 文件： | 总8页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZX84-G-Series
Vishay Semiconductors
www.vishay.com
Small Signal Zener Diodes
FEATURES
3
• Silicon planar Zener diodes
• The Zener voltages are graded according to the
international E24 standard. Standard Zener
voltage tolerance is 5 %, indicated by the “C”
in the ordering code. Replace “C” with “B” for
2 % tolerance.
1
2
20421
• AEC-Q101 qualified
• ESD capability acc. to AEC-Q101:
human body model: > 8 kV,
machine model: > 800 V
PRIMARY CHARACTERISTICS
• Base P/N-G3 - green, commercial grade
PARAMETER
VALUE
UNIT
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
VZ range nom.
Test current IZT
VZ specification
Int. construction
2.4 to 75
2; 5
V
mA
Pulse current
Single
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
BZX84C2V4-G3-08 to BZX84C75-G3-08
BZX84B2V4-G3-08 to BZX84B75-G3-08
BZX84C2V4-G3-18 to BZX84C75-G3-18
BZX84B2V4-G3-18 to BZX84B75-G3-18
3000 (8 mm tape on 7" reel)
15 000
BZX84-G-series
10 000 (8 mm tape on 13" reel)
10 000
PACKAGE
MOLDING COMPOUND
WEIGHT
MOISTURE SENSITIVITY
LEVEL
PACKAGE NAME
SOLDERING CONDITIONS
FLAMMABILITY RATING
MSL level 1
(according J-STD-020)
SOT-23
8.1 mg
UL 94 V-0
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Tamb = 25 °C, device on fiberglass substrate,
acc. layout on page 7
Power dissipation
Ptot
300
mW
T
amb = 25 °C, device on fiberglass substrate,
acc. layout on page 7
Thermal resistance junction to ambient air
RthJA
420
K/W
Tj
Junction temperature
150
°C
°C
°C
Tstg
Top
Storage temperature range
Operating temperature range
- 65 to + 150
- 55 to + 150
Rev. 1.2, 28-Feb-13
Document Number: 83458
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-G-Series
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
REVERSE
LEAKAGE
CURRENT
ZENER VOLTAGE
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT
TEST CURRENT
RANGE
MARKING
CODE
ZZK at
IZT2
PART NUMBER
VZ at IZT1
IZT1
IZT2
IR at VR
ZZ at IZT1
VZ at IZT1
10-4/°C
V
mA
μA
V
MIN.
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
NOM. MAX.
MAX.
100
100
95
MAX.
275
600
600
600
600
600
600
500
480
400
150
80
MIN.
- 9
- 9
- 9
- 8
- 8
- 7
- 6
- 5
- 3
- 2
- 1
2
MAX.
- 4
- 4
- 3
- 3
- 3
- 3
- 1
2
BZX84C2V4-G
BZX84C2V7-G
BZX84C3V0-G
BZX84C3V3-G
BZX84C3V6-G
BZX84C3V9-G
BZX84C4V3-G
BZX84C4V7-G
BZX84C5V1-G
BZX84C5V6-G
BZX84C6V2-G
BZX84C6V8-G
BZX84C7V5-G
BZX84C8V2-G
BZX84C9V1-G
BZX84C10-G
BZX84C11-G
BZX84C12-G
BZX84C13-G
BZX84C15-G
BZX84C16-G
BZX84C18-G
BZX84C20-G
BZX84C22-G
BZX84C24-G
BZX84C27-G
BZX84C30-G
BZX84C33-G
BZX84C36-G
BZX84C39-G
BZX84C43-G
BZX84C47-G
BZX84C51-G
BZX84C56-G
BZX84C62-G
BZX84C68-G
BZX84C75-G
G50
G51
G52
G53
G54
G55
G56
G57
G58
G59
G60
G61
G62
G63
G64
G65
G66
G67
G68
G69
G70
G71
G72
G73
G74
G75
G76
G77
G78
G79
G80
G81
G82
G83
G84
G85
G86
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
1
1
50
20
1
1
1
10
1
1
5
1
95
1
5
1
90
1
3
1
90
1
3
1
90
1
3
2
80
1
2
2
60
4
1
1
2
40
6
1
3
4
10
7
1
2
4
15
7
1
1
5
15
80
3
7
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
5
15
80
4
7
1
6
15
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
375
375
400
425
450
475
500
5
8
1
7
20
5
8
11
1
8
20
5
9
12
1
8
25
6
9
13
1
8
30
7
9
15
1
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
30
7
9
16
1
40
8
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
11
12
12
12
18
1
45
8
20
1
55
8
22
1
55
8
24
1
70
8
27
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
80
8
30
80
8
31
33
35
80
8
34
36
38
90
8
37
39
41
130
150
170
180
200
215
240
255
10
10
10
10
9
40
43
46
44
47
50
48
51
54
52
56
60
58
62
66
9
64
68
72
10
10
70
75
79
Rev. 1.2, 28-Feb-13
Document Number: 83458
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-G-Series
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
REVERSE
LEAKAGE
CURRENT
ZENER VOLTAGE
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT
TEST CURRENT
RANGE
MARKING
CODE
ZZK at
IZT2
PART NUMBER
VZ at IZT1
IZT1
IZT2
IR at VR
ZZ at IZT1
VZ at IZT1
10-4/°C
V
mA
μA
V
MIN.
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.0
NOM. MAX.
MAX.
100
100
95
MAX.
275
600
600
600
600
600
600
500
480
400
150
80
MIN.
- 9
- 9
- 9
- 8
- 8
- 7
- 6
- 5
- 3
- 2
- 1
2
MAX.
- 4
- 4
- 3
- 3
- 3
- 3
- 1
2
BZX84B2V4-G
BZX84B2V7-G
BZX84B3V0-G
BZX84B3V3-G
BZX84B3V6-G
BZX84B3V9-G
BZX84B4V3-G
BZX84B4V7-G
BZX84B5V1-G
BZX84B5V6-G
BZX84B6V2-G
BZX84B6V8-G
BZX84B7V5-G
BZX84B8V2-G
BZX84B9V1-G
BZX84B10-G
BZX84B11-G
BZX84B12-G
BZX84B13-G
BZX84B15-G
BZX84B16-G
BZX84B18-G
BZX84B20-G
BZX84B22-G
BZX84B24-G
BZX84B27-G
BZX84B30-G
BZX84B33-G
BZX84B36-G
BZX84B39-G
BZX84B43-G
BZX84B47-G
BZX84B51-G
BZX84B56-G
BZX84B62-G
BZX84B68-G
BZX84B75-G
H50
H51
H52
H53
H54
H55
H56
H57
H58
H59
H60
H61
H62
H63
H64
H65
H66
H67
H68
H69
H70
H71
H72
H73
H74
H75
H76
H77
H78
H79
H80
H81
H82
H83
H84
H85
H86
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.2
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
1
1
50
20
1
1
1
10
1
1
5
1
95
1
5
1
90
1
3
1
90
1
3
1
90
1
3
2
80
1
2
2
60
4
5.49
6.08
6.66
7.35
8.04
8.92
9.8
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52
1
1
2
40
6
1
3
4
10
7
1
2
4
15
7
1
1
5
15
80
3
7
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
5
15
80
4
7
1
6
15
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
375
375
400
425
450
475
500
5
8
1
7
20
5
8
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50
11
1
8
20
5
9
12
1
8
25
6
9
13
1
8
30
7
9
15
1
10.5
11.2
12.6
14
15.4
16.8
18.9
21
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
30
7
9
16
1
40
8
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
11
12
12
12
18
1
45
8
20
1
55
8
22
1
55
8
24
1
70
8
27
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
80
8
30
80
8
33
80
8
36
90
8
39
130
150
170
180
200
215
240
255
10
10
10
10
9
43
47
51
54.9
60.8
66.6
73.5
56
57.1
63.2
69.4
76.5
62
9
68
10
10
75
Rev. 1.2, 28-Feb-13
Document Number: 83458
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-G-Series
Vishay Semiconductors
www.vishay.com
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
mA
Ω
103
102
10
100
TJ = 25 °C
5
4
IF
3
2
33
rzj
TJ = 100 °C
27
22
1
10-1
10-2
10
18
15
TJ = 25 °C
5
4
12
10-3
10-4
10-5
3
10
2
6.8/8.2
6.2
1
0
0.2
0.4
0.6
0.8
VF
1V
0.1
2
5
1
2
5
10
IZ
2
5 100 mA
18114
18119
Fig. 1 - Forward Characteristics
Fig. 4 - Dynamic Resistance vs. Zener Current
Ω
mW
500
103
Tj = 25 °C
7
5
4
400
Rzj
3
2
47 + 51
43
39
Ptot
36
300
200
102
7
5
4
3
100
0
2
10
0.1
2
3
4
5
1
2
3
4
5
10
mA
0
100
200 °C
18120
IZ
18115
Tamb
Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 5 - Dynamic Resistance vs. Zener Current
Ω
1000
Ω
103
TJ = 25 °C
ΔVZ
5
4
3
5
4
3
Rzth = RthA x VZ x
Δ
Tj
2
2
Rzth
rzj
102
100
5
4
3
5
4
3
2
2
10
5
4
3
10
5
4
3
2.7
3.6
4.7
5.1
negative
positive
10
2
2
5.6
1
1
1
2
3
4
5
2
3
4
5
100 V
0.1
2
5
1
2
5
10
2
5 100 mA
18121
18117
VZ at IZ = 5 mA
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
IZ
Fig. 3 - Dynamic Resistance vs. Zener Current
Rev. 1.2, 28-Feb-13
Document Number: 83458
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-G-Series
Vishay Semiconductors
www.vishay.com
Ω
100
mV/°C
100
7
IZ = 5 mA
5
4
ΔVZ
80
60
Rzj
3
2
Δ
Tj
10
7
40
20
5
4
3
2
T = 25 °C
IZj = 5 mA
0
1
0
20
40
60
80
100 V
1
2
3
4
5
10
2
3
4
5
100 V
18122
VZ
18125
VZ
Fig. 7 - Dynamic Resistance vs. Zener Voltage
Fig. 10 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
mV/°C
25
V
9
8
7
20
ΔVZ
5 mA
1 mA
20 mA
51
ΔV
IZ =
6
5
4
Z
Δ
Tj
15
10
43
36
3
2
5
0
1
0
I
= 2 mA
Z
- 1
- 5
1
2
3
4
5
10
VZ
2
3
4
5
100 V
0
60 80
140 °C
20 40
100 120
18123
18126
T
j
Fig. 11 - Change of Zener Voltage vs. Junction Temperature
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
V
V
0.8
1.6
25
15
ΔVZ = Rzth x IZ
1.4
0.7
VZ at IZ = 5 mA
10
1.2
0.6
0.5
0.4
ΔVZ
1
0.8
0.6
ΔVZ
8
7
0.3
0.2
0.1
6.2
5.9
0.4
0.2
5.6
5.1
0
0
- 1
- 0.2
- 0.4
4.7
3.6
- 0.2
1
2
3
4
5
10
2
3
4
5
100 V
100 120 140 C
Tj
0
20 40 60 80
18127
18124
VZ at IZ = 5 mA
Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
Rev. 1.2, 28-Feb-13
Document Number: 83458
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-G-Series
Vishay Semiconductors
www.vishay.com
mA
10
V
5
T = 25 °C
j
Δ
VZ = Rzth x IZ
39
43
51
47
4
3
2
8
l
Test
current
IZ 5 mA
Z
ΔVZ
6
4
IZ = 5 mA
1
2
0
IZ = 2 mA
0
0
20
40
60
80
100 V
0
10 20 30 40 50 60 70 80 90100 V
18128
VZ
18113
V
Z
Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Fig. 16 - Breakdown Characteristics
mA
50
T = 25 °C
j
3.9
5.6
2.7
6.8
3.3 4.7
40
8.2
lZ
30
20
Test
current
IZ 5 mA
10
0
0
1
2
3
4
5
6
7
8
9
10 V
V
18111
Z
Fig. 14 - Breakdown Characteristics
mA
30
10
12
T = 25 °C
j
l
Z
15
20
18
22
27
Test
10
0
current
33
36
I
5 mA
Z
0
10
20
30
40 V
18112
V
Z
Fig. 15 - Breakdown Characteristics
Rev. 1.2, 28-Feb-13
Document Number: 83458
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-G-Series
Vishay Semiconductors
www.vishay.com
LAYOUT FOR RthJA TEST
Thickness: fiberglass 0.059" (1.5 mm)
Copper leads 0.012" (0.3 mm)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
12 (0.47)
0.8 (0.03)
15 (0.59)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
3.1 (0.122)
2.8 (0.110)
0.550 ref. (0.022 ref.)
0.5 (0.020)
0.3 (0.012)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
2.6 (0.102)
2.35 (0.093)
0.45 (0.018)
0.35 (0.014)
Foot print recommendation:
0.7 (0.028)
1 (0.039)
0.9 (0.035)
1 (0.039)
0.9 (0.035)
0.95 (0.037)
0.95 (0.037)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
Rev. 1.2, 28-Feb-13
Document Number: 83458
7
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 13-Jun-16
Document Number: 91000
1
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