BZX84C47 [VISHAY]
350 mW Surface Mount Zener Diodes; 350毫瓦表面贴装齐纳二极管型号: | BZX84C47 |
厂家: | VISHAY |
描述: | 350 mW Surface Mount Zener Diodes |
文件: | 总5页 (文件大小:73K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BZX84C2V7–BZX84C51
Vishay Telefunken
350 mW Surface Mount Zener Diodes
Features
Planar die construction
350 mW Power dissipation
Zener voltages from 2.7V – 51V
Ideally suited for automated assembly processes
94 8550
Absolute Maximum Ratings
T = 25 C
j
Parameter
Power dissipation
Test Conditions
on ceramic substrate
10mm x 8mm x 0.7mm
Symbol
Value
350
Unit
mW
P
d
Zener current (see figures 1–3 below)
Junction and storage
temperature range
T =T
–55...+150
C
j
stg
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
on ceramic substrate 10mm x 8mm x 0.7mm
Symbol
R
thJA
Value
420
Unit
K/W
Electrical Characteristics
T = 25 C
j
Parameter
Forward Voltage
Test Conditions
I =10 mA
Type
Symbol Min
Typ Max Unit
0.9
V
F
V
F
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85606
Rev. 1, 01-Apr-99
1 (5)
BZX84C2V7–BZX84C51
Vishay Telefunken
Type
BZX84C...
Marking
V
V
Z
@ I
mA
Z
@ I
mA
T
%/ C
I
@ V
V
Z
ZT
ZT
ZK
ZK
C
R
R
A
@ I
ZT
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
KZC
KZD
KZE
KZF
KZG
KZH
KZ1
KZ2
KZ3
KZ4
KZ5
KZ6
KZ7
KZ8
KZ9
KY1
KY2
KY3
KY4
KY5
KY6
KY7
KY8
KY9
KYA
KYB
KYC
KYD
KYE
KYF
KYG
KYH
2.5 to 2.9
2.8 to 3.2
3.1 to 3.5
3.4 to 3.8
3.7 to 4.1
4.0 to 4.6
4.4 to 5.0
4.8 to 5.4
5.2 to 6.0
5.8 to 6.6
6.4 to 7.2
7.0 to 7.9
7.7 to 8.7
8.5 to 9.6
9.4 to 10.6
10.4 to 11.6
11.4 to 12.7
12.4 to 14.1
13.8 to 15.6
15.3 to 17.1
16.8 to 19.1
18.8 to 21.2
20.8 to 23.3
22.8 to 25.6
25.1 to 28.9
28 to 32
100
100
95
95
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
150
170
180
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
600
600
600
600
600
600
500
480
400
150
80
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
–0.065
–0.060
–0.055
–0.055
–0.050
–0.035
–0.015
+0.005
+0.020
+0.030
+0.045
+0.050
+0.055
+0.065
+0.065
+0.070
+0.075
+0.080
+0.080
+0.090
+0.090
+0.090
+0.090
+0.090
+0.090
+0.090
+0.090
+0.090
+0.110
+0.110
+0.110
+0.110
20
10
5.0
5.0
3.0
3.0
4.0
2.0
1.0
3.0
2.0
1.0
0.7
0.5
0.2
0.1
0.1
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
375
375
400
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
0.7V
Znom
Znom
Znom
Znom
Znom
Znom
Znom
Znom
Znom
Znom
Znom
Znom
Znom
Znom
24
27
30
33
36
39
43
47
31 to 35
34 to 38
37 to 41
40 to 46
44 to 50
48 to 54
51
1) Device mounted on ceramic substrate 8mmx10mmx0.7mm
2) V measured at I using a pulse test. I pulse width = 5 ms. Standard voltage tolerance is 5%.
Z
ZT
Z
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2 (5)
Document Number 85606
Rev. 1, 01-Apr-99
BZX84C2V7–BZX84C51
Vishay Telefunken
Characteristics (Tj = 25 C unless otherwise specified)
500
400
300
200
100
50
T =25°C
j
C3V9
C2V7
C5V6
C3V3
C6V8
See Note 1
C4V7
40
C8V2
30
20
Test Current I
5.0mA
z
10
0
0
100
– Ambient Temperature ( °C )
0
200
0
1
2
3
4
5
6
8
9
10
7
15254
T
amb
15251
V – Z-Voltage ( V )
Z
Figure 4. Total Power Dissipation vs.
Ambient Temperature
Figure 1. Z–Current vs. Z–Voltage
1000
30
20
10
0
T =25°C
C10
C12
j
T =25°C
j
V
= 1V
R
V
= 2V
R
C15
C18
100
Test Current I
2.0mA
z
V
= 1V
R
C22
C27
Test Current I
5.0mA
z
C33
C36
V
= 2V
R
10
10
V – Z-Voltage ( V )
1
100
0
10
20
30
40
15255
Z
15252
V – Z-Voltage ( V )
Z
Figure 5. Diode Capacitance vs. Z–Voltage
Figure 2. Z–Current vs. Z–Voltage
10
8
C47
C51
C39
T =25°C
j
C43
6
4
Test Current I
2.0mA
z
2
0
0
10 20 30 40 50 60 70 80 90 100
V – Z-Voltage ( V )
15253
Z
Figure 3. Z–Current vs. Z–Voltage
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85606
Rev. 1, 01-Apr-99
3 (5)
BZX84C2V7–BZX84C51
Vishay Telefunken
Dimensions in mm
top view
14370
Case: SOT23, molded plastic
Mounting position: any
Approx. weight: 0.008 grams
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4 (5)
Document Number 85606
Rev. 1, 01-Apr-99
BZX84C2V7–BZX84C51
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85606
Rev. 1, 01-Apr-99
5 (5)
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