CNY17-4-X007 [VISHAY]
Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, SMD, 6 PIN;
| 型号： | CNY17-4-X007 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, SMD, 6 PIN 输出元件 光电 |
| 文件： | 总10页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CNY17
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection
Features
• Isolation Test Voltage 5300 V
RMS
• Long Term Stability
1
6
A
C
B
C
E
• Industry Standard Dual-in-Line Package
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
e3
5
4
2
3
NC
Agency Approvals
i179004
• Underwriters Lab File #E52744
System Code H or J
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Order Information
Part
Remarks
• BSI IEC60950 IEC60065
• FIMKO
CNY17-1
CTR 40 - 80 %, DIP-6
CNY17-2
CTR 63 - 125 %, DIP-6
CNY17-3
CTR 100 - 200 %, DIP-6
Description
CNY17-4
CTR 160 - 320 %, DIP-6
The CNY17 is an optically coupled pair consisting of
a Gallium Arsenide infrared emitting diode optically
coupled to a silicon NPN phototransistor.
Signal information, including a DC level, can be trans-
mitted by the device while maintaining a high degree
of electrical isolation between input and output.
CNY17-1X006
CNY17-1X007
CNY17-1X009
CNY17-2X006
CNY17-2X007
CNY17-2X009
CNY17-3X006
CNY17-3X007
CNY17-3X009
CNY17-4X006
CNY17-4X007
CNY17-4X009
CTR 40 - 80 %, DIP-6 400 mil (option 6)
CTR 40 - 80 %, SMD-6 (option 7)
CTR 40 - 80 %, SMD-6 (option 9)
CTR 63 - 125 %, DIP-6 400 mil (option 6)
CTR 63 - 125 %, SMD-6 (option 7)
CTR 63 - 125 %, SMD-6 (option 9)
CTR 100 - 200 %, DIP-6 400 mil (option 6)
CTR 100 - 200 %, SMD-6 (option 7)
CTR 100 - 200 %, SMD-6 (option 9)
CTR 160 - 320 %, DIP-6 400 mil (option 6)
CTR 160 - 320 %, SMD-6 (option 7)
CTR 160 - 320 %, SMD-6 (option 9)
The CNY17 can be used to replace relays and trans-
formers in many digital interface applications, as well
as analog applications such as CRT modulation.
For additional information on the available options refer to
Option Information.
Document Number 83606
Rev. 1.5, 26-Oct-04
www.vishay.com
1
CNY17
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
VR
Value
6.0
Unit
V
Reverse voltage
Forward current
Surge current
IF
60
2.5
100
mA
A
t ≤ 10 µs
IFSM
Pdiss
Power dissipation
mW
Output
Parameter
Test condition
Symbol
BVCEO
Value
70
Unit
V
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
BVEBO
7.0
V
Collector current
IC
IC
50
mA
mA
mW
t < 1.0 ms
100
150
Power dissipation
Pdiss
Coupler
Parameter
Test condition
Symbol
VISO
Value
5300
Unit
Isolation test voltage (between t = 1 sec
emitter & detector referred to
climate DIN 50014,
VRMS
part 2, Nov. 74)
Creepage distance
Clearance distance
≥ 7.0
≥ 7.0
≥ 0.4
mm
mm
mm
Isolation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDE0303, part 1
175
≥ 1012
≥1 011
Isolation resistance
VIO = 500 V, Tamb = 25 °C
IO = 500 V, Tamb = 100 °C
RIO
RIO
Ω
Ω
V
Storage temperature
Operating temperature
Soldering temperature
Tstg
Tamb
Tsld
- 55 to + 150
°C
°C
°C
- 55 to + 100
260
max. 10 s, dip soldering:
distance to seating plane
≥ 1.5 mm
www.vishay.com
2
Document Number 83606
Rev. 1.5, 26-Oct-04
CNY17
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
IF = 60 mA
R = 10 mA
Symbol
VF
Min
6.0
Typ.
1.25
Max
1.65
Unit
V
Forward voltage
Breakdown voltage
Reserve current
Capacitance
I
VBR
IR
V
µA
V
V
R = 6.0 V
R = 0 V, f = 1.0 MHz
0.01
25
10
CO
Rth
pF
Thermal resistance
750
K/W
Output
Parameter
Test condition
VCE = 5.0 V, f = 1.0 MHz
Symbol
CCE
Min
Typ.
5.2
Max
Unit
pF
Collector-emitter capacitance
Collector - base capacitance
Emitter - base capacitance
Thermal resistance
V
V
CB = 5.0 V, f = 1.0 MHz
EB = 5.0 V, f = 1.0 MHz
CCB
CEB
Rth
6.5
7.5
pF
pF
500
K/W
Coupler
Parameter
Test condition
Part
Symbol
VCEsat
Min
Typ.
0.25
Max
Unit
Collector-emitter saturation
voltage
VF = 10 mA, IC = 2.5 mA
0.4
V
Coupling capacitance
CC
0.6
2.0
pF
nA
Collector-emitter leakage
current
V
CE = 10 V, ICEO
CNY17-1
ICEO
50
CNY17-2
CNY17-3
CNY17-4
ICEO
ICEO
ICEO
2.0
5.0
5.0
50
nA
nA
nA
100
100
Current Transfer Ratio
Current Transfer Ratio and collector-emitter leakage current by dash number (Tamb°C)
Parameter
Test condition
Part
Symbol
CTR
Min
Typ.
30
Max
Unit
%
IC/IF
IF = 10 mA, VCE = 5.0 V
CNY17-1
40
80
CNY17-2
CNY17-3
CNY17-4
CNY17-1
CTR
CTR
CTR
CTR
63
100
160
13
125
200
320
%
%
%
%
IF = 1.0 mA, VCE = 5.0 V
CNY17-2
CNY17-3
CNY17-4
CTR
CTR
CTR
22
34
56
45
70
90
%
%
%
Document Number 83606
Rev. 1.5, 26-Oct-04
www.vishay.com
3
CNY17
Vishay Semiconductors
Switching Characteristics
Linear operation (without saturation)
Parameter
Turn-on time
Test condition
IF = 10 mA, VCC = 5.0 V, RL = 75 W
F = 10 mA, VCC = 5.0 V, RL = 75 W
IF = 10 mA, VCC = 5.0 V, RL = 75 W
F = 10 mA, VCC = 5.0 V, RL = 75 W
IF = 10 mA, VCC = 5.0 V,
Symbol
ton
Min
Typ.
3.0
Max
Unit
µs
Rise time
I
tr
toff
tf
2.0
2.3
2.0
250
µs
µs
Turn-off time
Fall time
I
µs
Cut-off frequency
fCO
kHz
Switching operation (with saturation)
Parameter
Test condition
IF = 20 mA
IF = 10 mA
Part
Symbol
ton
Min
Typ.
3.0
Max
Unit
Turn-on time
Rise time
CNY17-1
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
CNY17-2
CNY17-3
CNY17-4
CNY17-1
CNY17-2
CNY17-3
CNY17-4
CNY17-1
CNY17-2
CNY17-3
CNY17-4
CNY17-1
CNY17-2
CNY17-3
CNY17-4
ton
ton
ton
tf
4.2
4.2
6.0
2.0
3.0
3.0
4.6
18
IF = 5.0 mA
IF = 20 mA
IF = 10 mA
tf
tf
IF = 5.0 mA
IF = 20 mA
IF = 10 mA
tf
Turn-off time
Fall time
toff
toff
toff
toff
tf
23
23
IF = 5.0 mA
IF = 20 mA
IF = 10 mA
25
11
tf
14
tf
14
IF = 5.0 mA
tf
15
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
IF
IF
RL = 75 Ω
1 KΩ
VCC = 5 V
VCC = 5 V
IC
47 Ω
icny17_02
icny17_01
Figure 1. Linear Operation ( without Saturation)
Figure 2. Switching Operation (with Saturation)
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4
Document Number 83606
Rev. 1.5, 26-Oct-04
CNY17
Vishay Semiconductors
(T = –25°C, V
CE
C
= 5.0 V)
A
(T = 50°C, V
= 5.0 V)
CE
I
/I = f (I )
F F
A
I
/I = f (I
)
C
F
F
1
2
3
4
1
2
3
4
icny17_06
icny17_03
Figure 3. Current Transfer Ratio vs. Diode Current
Figure 6. Current Transfer Ratio vs. Diode Current
= 5.0 V)
(T
I
= 0 °C, V
CE
)
A
/I
= f (I
C
F
F
(T = 75°C, V
CE
= 5.0 V)
A
1
2
3
1
2
3
4
icny17_07
icny17_04
Figure 4. Current Transfer Ratio vs. Diode Current
Figure 7. Current Transfer Ratio vs. Diode Current
(T = 25°C, V
= 5.0 V)
A
CE
(I = 10 mA, V
= 5.0 V)
CE
F
I
/I = f (I )
F F
C
I /I = f (T)
C F
4
3
2
1
2
3
4
1
T
icny17_08
icny17_05
A
Figure 5. Current Transfer Ratio vs. Diode Current
Figure 8. Current Transfer Ratio (CTR) vs. Temperature
Document Number 83606
Rev. 1.5, 26-Oct-04
www.vishay.com
5
CNY17
Vishay Semiconductors
I
= f (V
)
CE
C
( I = 0)
F
I
= f (V,T)
CEO
( I = 0)
F
icny17_12
icny17_09
Figure 9. Transistor Characteristics
Figure 12. Collector-Emitter off-state Current
V
= f (I )
C
CEsat
I
= f (V )
CE
C
icny17_13
icny17_10
Figure 10. Output Characteristics
Figure 13. Saturation Voltage vs Collector Current and Modulation
Depth CNY17-1
V
= f (I )
F
F
V
= f (I )
C
CEsat
icny17_14
icny17_11
Figure 11. Forward Voltage
Figure 14. Saturation Voltage vs. Collector Current and Modulation
Depth CNY17-2
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6
Document Number 83606
Rev. 1.5, 26-Oct-04
CNY17
Vishay Semiconductors
V
= f (I )
C
CEsat
icny17_15
Figure 15. Saturation Voltage vs. Collector Current and Modulation
Depth CNY17-3
V
V
= f (I )
C
CEsat
icny17_16
Figure 16. Saturation Voltage vs. Collector Current and Modulation
Depth CNY17-4
P
= f (T )
A
tot
icny17_18
Figure 17. Permissible Power Dissipation for Transistor and Diode
Document Number 83606
Rev. 1.5, 26-Oct-04
www.vishay.com
7
CNY17
Vishay Semiconductors
Package Dimensions in Inches (mm)
pin one ID
2
1
3
.248 (6.30)
.256 (6.50)
ISO Method A
4
5
6
.335 (8.50)
.343 (8.70)
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.039
(1.00)
Min.
.130 (3.30)
.150 (3.81)
18°
4°
.114 (2.90)
.130 (3.0)
typ.
.031 (0.80) min.
3°–9°
.010 (.25)
typ.
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.300–.347
(7.62–8.81)
.100 (2.54) typ.
i178004
Option 7
Option 6
Option 9
0.375 (9.53)
0.395 (10.03)
0.300(7.62)
TYP.
0.407(10.36)
0.391(9.96)
0.307(7.8)
0.291(7.4)
0.300 (7.62)
ref.
0.028 (0.7)
MIN.
0.180(4.6)
0.160(4.1)
0.0040 (0.102)
0.0098 (0.249)
0.012 (0.30) ty.p
0.315(8.0)
MIN
.
0.020 (0.51)
0.040 (1.02)
0.014(0.35)
0.010(0.25)
0.331(8.4)
MIN.
15° max.
0.315 (8.00)
0.400(10.16)
0.430(10.92)
min.
0.406(10.3)
MAX.
18450
www.vishay.com
Document Number 83606
Rev. 1.5, 26-Oct-04
8
CNY17
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 83606
Rev. 1.5, 26-Oct-04
www.vishay.com
9
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
相关型号：
CNY17-4.SD
Transistor Output Optocoupler, 1-Element, 5300V Isolation, SURFACE MOUNT PACKAGE-6
FAIRCHILD
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