CS3M-E3/I [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 2A, 1000V V(RRM), Silicon, DO-214AB, SMC, 2 PIN;
| 型号： | CS3M-E3/I |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 2A, 1000V V(RRM), Silicon, DO-214AB, SMC, 2 PIN 光电二极管 |
| 文件： | 总4页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CS3D, CS3G, CS3J, CS3K, CS3M
www.vishay.com
Vishay General Semiconductor
Surface-Mount Glass Passivated Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMC (DO-214AB)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
IF(AV)
3.0 A
For use in general purpose rectification of power supplies,
inverters, converters, and freewheeling diodes for
consumer, and telecommunication.
VRRM
200 V, 400 V, 600 V, 800 V, 1000 V
IFSM
IR
100 A
5.0 μA
VF at IF = 3.0 A (TA = 125 °C)
TJ max.
0.85 V
MECHANICAL DATA
150 °C
Case: SMC (DO-214AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Package
SMC (DO-214AB)
Single
Circuit configuration
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
CS3D
CS3G
G
CS3J
J
CS3K
K
CS3M
M
UNIT
Device marking code
D
Maximum repetitive peak reverse voltage
VRRM
200
400
600
2.0
3.0
800
1000
V
A
(1)
IF(AV)
Average forward rectified current
(2)
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C
Notes
(1)
Free air, mounted on recommended copper pad area
Mounted on 14 mm x 14 mm copper pad areas
(2)
Revision: 27-Jul-17
Document Number: 87637
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CS3D, CS3G, CS3J, CS3K, CS3M
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.90
0.95
0.77
0.85
-
MAX.
-
UNIT
IF = 1.5 A
TA = 25 °C
IF = 3.0 A
IF = 1.5 A
IF = 3.0 A
1.2
-
(1)
Maximum instantaneous forward voltage
VF
V
TA = 125 °C
1.05
10
TA = 25 °C
Maximum DC reverse current at rated DC
blocking voltage
(2)
Rated VR
IR
μA
TA = 125 °C
-
500
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
Typical reverse recovery time
Typical junction capacitance
trr
2.8
26
-
-
μs
4.0 V, 1 MHz
CJ
pF
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: pulse width ≤ 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
CS3D
CS3G
CS3J
CS3K
CS3M
UNIT
(1)
RθJA
80
Typical thermal resistance
°C/W
(2)
RθJM
13
Notes
(1)
Free air, mounted on recommended copper pad area; thermal resistance RθJA - junction to ambient
Mounted on 14 mm x 14 mm copper pad areas, RθJM - junction to mount at the terminal
(2)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
13" diameter plastic tape and reel
CS3J-E3/I
0.211
I
3500
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
D = 0.8
D = 0.5
D = 0.3
RthJM = 13 °C/W, mounted on
14 mm x 14 mm copper pad areas
D = 0.2
D = 0.1
D = 1.0
RthJA = 80 °C/W
T
D = tp/T
tp
0
25
50
75
100
125
150
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Average Forward Current (A)
1
1.1 1.2
Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 27-Jul-17
Document Number: 87637
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CS3D, CS3G, CS3J, CS3K, CS3M
www.vishay.com
Vishay General Semiconductor
100
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = 150 °C
TJ = 125 °C
1
10
TJ = 75 °C
0.1
0.01
TJ = 25 °C
0.8 1.0
1
0.2
0.4
0.6
1.2
1.4
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
1000
100
TJ = 150 °C
100
TJ = 125 °C
Junction to Ambient
10
10
TJ = 75 °C
1
TJ = 25 °C
0.1
0.01
1
0.01
10 20 30 40 50 60 70 80 90 100
0.1
1
10
100
1000
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMC (DO-214AB)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.245 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.01)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 27-Jul-17
Document Number: 87637
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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