DF02M45-E3 [VISHAY]
DIODE 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, DFM, 4 PIN, Bridge Rectifier Diode;
| 型号： | DF02M45-E3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, DFM, 4 PIN, Bridge Rectifier Diode 光电二极管 |
| 文件： | 总2页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DF005M thru DF10M
Vishay Semiconductors
formerly General Semiconductor
Miniature Glass Passivated
Single-Phase Bridge Rectifiers
Reverse Voltage 50 to 1000V
Forward Current 1.0A
Case Style DFM
Features
• This series is UL listed under the Recognized
Component Index, file number E54214
• Plastic package used has Underwriters Laboratory
Flammability Classification 94V-0
0.315 (8.00)
0.255 (6.5)
0.245 (6.2) 0.285 (7.24)
• Glass passivated chip junction
• High surge overload rating of 50 Amperes peak
• Ideal for printed circuit boards
0.335 (8.51)
0.320 (8.12)
• High temperature soldering guaranteed:
260°C/10 seconds, at 5 lbs. (2.3kg) tension
0.130 (3.3)
0.120 (3.05)
0.080 (2.03)
0.050 (1.27)
Mechanical Data
0.045 (1.14)
0.035 (0.89)
Case: Molded plastic body over passivated junctions
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
0.013 (3.3)
0.185 (4.69)
0.150 (3.81)
0.0086 (0.22)
0.023 (0.58)
0.018 (0.46)
0.350 (8.9)
0.300 (7.6)
0.075 (1.90)
0.055 (1.39)
0.205 (5.2)
0.195 (5.0)
Polarity: Polarity symbols as marked on body
Mounting Position: Any
Weight: 0.014oz., 0.4g
Packaging codes/options:
45/50 ea. per Bulk Tube
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
DF
DF
DF
DF
DF
DF
DF
Parameter
Symbol 005M 01M 02M 04M 06M 08M 10M Unit
Device Marking Code
DF005 DF01 DF02 DF04 DF06 DF08 DF10
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
1.0
600
420
600
800 1000
560 700
800 1000
V
V
V
A
100
Max. average forward output rectified current at TA=40°C IF(AV)
Peak forward surge current single sine-wave
IFSM
50
10
A
superimposed on rated load (JEDEC Method)
Rating for fusing (t < 8.3ms)
I2t
A2sec
°C/W
°C
Typical thermal resistance per leg (NOTE 1)
RθJA
RθJL
40
15
Operating junction and storage temperature range
T , T
–55 to +150
J
STG
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
DF DF DF DF
Symbol 005M 01M 02M 04M 06M 08M 10M Unit
DF
DF
DF
Parameter
Maximum instantaneous forward voltage drop
per leg at 1.0A
VF
1.1
V
Maximum reverse current
at rated DC blocking voltage per leg
TA = 25°C
TA = 125°C
5.0
500
IR
µA
Typical junction capacitance per leg at 4.0V, 1MHz
CJ
25
pF
Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13 x 13mm) copper pads
Document Number 88571
07-Feb-02
www.vishay.com
1
DF005M thru DF10M
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current Per Leg
Fig. 1 - Derating Curve Output
Rectified Current
1.0
60
50
40
30
20
10
0
60 Hz
Resistive or
Inductive Load
T = 150°C
J
Single Sine-Wave
(JEDEC Method)
0.5
P.C.B mounted on
0.51 x 0.51" (13 x 13mm)
Copper pads with 0.06"
(1.5mm) lead length
1.0 Cycle
10
0
20
40
60
80
100
120
140 150
1
100
Ambient Temperature (°C)
Number of Cycles at 60 Hz
Fig. 4 - Typical Reverse Leakage
Characteristics Per Leg
Fig. 3 - Typical Forward Characteristics
Per Leg
100
10
1
10
1
T = 125°C
J
0.1
T = 25°C
J
0.1
Pulse width = 300µs
1% Duty Cycle
T = 25°C
J
0.01
0.01
40
80
0.4
0.6
0.8
0
20
60
100
1.0
1.2
1.4
Percent of Rated Peak Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Fig. 6 - Typical Transient Thermal
Impedance
Fig. 5 - Typical Junction Capacitance
Per Leg
100
10
1
100
10
1
T = 25°C
J
f = 1.0MHz
Vsig = 50mVp-p
0.1
100
1
10
1
10
Reverse Voltage (V)
100
0.01
0.1
t, Heating Time (sec.)
www.vishay.com
2
Document Number 88571
07-Feb-02
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