DF08MA45-E3 [VISHAY]
DIODE 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, DFM, 4 PIN, Bridge Rectifier Diode;
| 型号： | DF08MA45-E3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, DFM, 4 PIN, Bridge Rectifier Diode |
| 文件： | 总2页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DF005MA thru DF10MA
New Product
Vishay Semiconductors
formerly General Semiconductor
Miniature Glass Passivated
Single-Phase Bridge Rectifier
Reverse Voltage 50 and 1000V
Forward Current 1.0A
Case Style DFM
Features
• This series is UL listed under the Recognized
Component Index, file number E54214
• Plastic package used has Underwriters Laboratory
0.315 (8.00)
0.255 (6.5)
0.245 (6.2) 0.285 (7.24)
Flammability Classification 94V-0
• Glass passivated chip junction
• High surge overload rating of 30 Amperes peak
• Ideal for printed circuit boards
• High temperature soldering guaranteed:
260°C/10 seconds, at 5 lbs. (2.3kg) tension
0.335 (8.51)
0.320 (8.12)
Mechanical Data
Case: Molded plastic body over passivated junctions
0.130 (3.3)
0.120 (3.05)
0.080 (2.03)
0.050 (1.27)
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
0.045 (1.14)
0.035 (0.89)
0.013 (3.3)
0.185 (4.69)
0.150 (3.81)
0.0086 (0.22)
0.023 (0.58)
0.018 (0.46)
Polarity: Polarity symbols as marked on body
Mounting Position: Any
0.350 (8.9)
0.300 (7.6)
0.075 (1.90)
0.055 (1.39)
0.205 (5.2)
0.195 (5.0)
Weight: 0.014 oz., 0.4g
Packaging codes/options: 45/50 ea.per Bulk Tube
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
DF
DF
DF
DF
DF
DF
DF
Parameter
Symbol 005MA 01MA 02MA 04MA 06MA 08MA 10MA Unit
DFA DFA DFA DFA DFA DFA DFA
Device Marking Code
005
01
100
70
02
04
06
08
800 1000
560 700
800 1000
10
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
200
140
200
400
280
400
600
420
600
V
V
V
35
Maximum DC blocking voltage
50
100
Maximum average forward output rectified current
at TA = 40°C
IF(AV)
1.0
A
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC Method)
IFSM
I2t
30
A
Rating for fusing (t < 8.3ms)
4.5
A2sec
°C/W
°C
Typical thermal resistance per leg (Note 1)
RθJA
RθJL
40
15
Operating junction and storage temperature range
T , T
–55 to +150
J
STG
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage drop
per leg at 1.0A
VF
1.1
V
Maximum reverse current
at rated DC blocking voltage per leg
TA = 25°C
TA = 125°C
5.0
500
IR
µA
Typical junction capacitance per leg at 4.0V, 1MHz
CJ
25
pF
Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13 x 13mm) copper pads
Document Number 88572
29-Mar-02
www.vishay.com
1
DF005MA thru DF10MA
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current Per Leg
Fig. 1 - Derating Curve Output
Rectified Current
30
25
20
15
10
5
1.0
0.5
0
60 HZ
Resistive or
Inductive Load
T = 150°C
J
Single Sine-Wave
(JEDEC Method)
P.C.B mounted on
0.51 x 0.51" (13 x 13mm)
Copper pads with 0.06"
(1.5mm) lead length
1.0 Cycle
10
0
1
100
20
40
60
80
100
120
140 150
Number of Cycles at 60 Hz
Ambient Temperature (°C)
Fig. 4 - Typical Reverse Leakage
Characteristics Per Leg
Fig. 3 - Typical Forward Characteristics
Per Leg
100
10
1
10
1
T = 125°C
J
0.1
T = 25°C
J
0.1
Pulse width = 300µs
1% Duty Cycle
T = 50°C
J
0.01
0.01
40
80
0
20
60
100
0.4
0.6
0.8
1.0
1.2
1.4
Percent of Rated Peak Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Fig. 6 - Typical Transient Thermal
Impedance
Fig. 5 - Typical Junction Capacitance
Per Leg
100
10
1
100
10
1
T = 25°C
J
f = 1.0 MHz
Vsig = 50mVp-p
0.1
100
1
10
0.01
0.1
1
10
Reverse Voltage (V)
100
t, Heating Time (sec.)
www.vishay.com
2
Document Number 88572
29-Mar-02
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