DZ23B18-GS08 [VISHAY]
DIODE 18 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC PACKAGE-3, Voltage Regulator Diode;
| 型号： | DZ23B18-GS08 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 18 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC PACKAGE-3, Voltage Regulator Diode 测试 光电二极管 |
| 文件： | 总9页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DZ23-Series
Vishay Semiconductors
VISHAY
Small Signal Zener Diodes, Dual
Features
• This diode is also available in other case styles
and configurations including: the dual diode com-
mon cathode configuration with type designation
AZ23, the single diode SOT-23 case with the type
designation BZX84C, and the single diode
3
1
2
18110
SOD-123 case with the type designation BZT52C.
• Dual Silicon Planar Zener Diodes, Common
Cathode
• The Zener voltages are graded according to the
international E 24 standard. Standard Zener volt-
age tolerance is ± 5 %. Replace "C" with "B" for
2 % tolerance.
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
• The parameters are valid for both diodes in one
case. ∆VZ and ∆rzj of the two diodes in one case is
≤ 5 %
GS18 / 10 k per 13 " reel, (8 mm tape), 10 k/box
GS08 / 3 k per 7 " reel, (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
Unit
mW
1)
Power dissipation
P
tot
300
1)
Device on fiberglass substrate, see layout
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
Unit
1)
Thermal resistance junction to ambient air
Junction temperature
R
°C/W
thJA
420
T
150
°C
°C
j
Storage temperature range
T
- 65 to + 150
S
1)
Device on fiberglass substrate, see layout
Document Number 85765
Rev. 1.5, 08-Jul-04
www.vishay.com
1
DZ23-Series
Vishay Semiconductors
VISHAY
Electrical Characteristics
1)
Partnumber
Marking
Code
Dynamic Resistance
Test
Current
Temperature
Coefficient of Zener
Voltage
Reverse
Voltage
Zener Voltage Range
V
@ I
r
@
r
@
I
α
@ I = 5 mA
V @
R
Z
Z
zj
zj
Z
VZ
Z
I
= 5 mA, I = 1 mA,
I
R
= 100
nA
Z
Z
f = 1 kHz, f = 1 kHz,
-4
V
Ω
mA
V
10 /°C
min
2.5
2.8
3.1
3.4
3.7
4
max
2.9
3.2
3.5
3.8
4.1
4.6
5
min
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
max
-4
-3
-3
-3
-3
-1
2
DZ23C2V7
DZ23C3V0
DZ23C3V3
DZ23C3V6
DZ23C3V9
DZ23C4V3
DZ23C4V7
DZ23C5V1
DZ23C5V6
DZ23C6V2
DZ23C6V8
DZ23C7V5
DZ23C8V2
DZ23C9V1
DZ23C10
DZ23C11
DZ23C12
DZ23C13
DZ23C15
DZ23C16
DZ23C18
DZ23C20
DZ23C22
DZ23C24
DZ23C27
DZ23C30
DZ23C33
DZ23C36
DZ23C39
DZ23C43
DZ23C47
DZ23C51
V1
V2
75 (<83)
80 (<95)
80 (<95)
80 (<95)
80 (<95)
80 (<95)
70 (<78)
30 (<60)
10 (<40)
4.8 (<10)
4.5 (<8)
4 (<7)
<500
<500
<500
<500
<500
<500
<500
<480
<400
<200
<150
<50
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
-
-
-
-
-
-
-
V3
V4
V5
V6
V7
4.4
4.8
5.2
5.8
6.4
7
V8
5.4
6
4
>0.8
>1
V9
6
V10
V11
V12
V13
V14
V15
V16
V17
V18
V19
V20
V21
V22
V23
V24
V25
V26
V27
V28
V29
V30
V31
V32
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
7
>2
7
>3
-3
4
7
>5
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
4.5 (<7)
4.8 (<10)
5.2 (<15)
6 (<20)
<50
7
>6
<50
5
8
>7
<70
5
8
>7.5
>8.5
>9
<70
5
9
7 (<20)
<90
6
9
9 (<25)
<110
<110
<170
<170
<220
<220
<220
<250
<250
<250
<250
<300
<700
<750
<750
7
9
>10
>11
>12
>14
>15
>17
>18
>20
>22.5
>25
>27
>29
>32
>35
>38
11 (<30)
13 (<40)
18 (<50)
20 (<50)
25 (<55)
28 (<80)
30 (<80)
35 (<80)
40 (<80)
40 (<90)
50 (<90)
60 (<100)
70 (<100)
70 (<100)
7
9
8
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
8
8
8
8
8
8
31
35
8
34
38
8
37
41
10
10
10
10
40
46
44
50
48
54
1)
Tested with pulses tp = 5 ms
www.vishay.com
2
Document Number 85765
Rev. 1.5, 08-Jul-04
DZ23-Series
Vishay Semiconductors
VISHAY
Electrical Characteristics
1)
Partnumber
Marking
Code
Dynamic Resistance
Test
Current
Temperature
Coefficient of Zener
Voltage
Reverse
Voltage
Zener Voltage Range
V
@ I
r
@
r
@
I
α
@ I = 5 mA
V @
R
Z
Z
zj
zj
Z
VZ
Z
I = 5 mA, I = 1 mA,
I
R
= 100
nA
Z
Z
f = 1 kHz, f = 1 kHz,
-4
V
Ω
mA
V
10 /°C
min
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5
max
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.2
min
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
max
-4
-3
-3
-3
-3
-1
2
DZ23B2V7
DZ23B3V0
DZ23B3V3
DZ23B3V6
DZ23B3V9
DZ23B4V3
DZ23B4V7
DZ23B5V1
DZ23B5V6
DZ23B6V2
DZ23B6V8
DZ23B7V5
DZ23B8V2
DZ23B9V1
DZ23B10
DZ23B11
DZ23B12
DZ23B13
DZ23B15
DZ23B16
DZ23B18
DZ23B20
DZ23B22
DZ23B24
DZ23B27
DZ23B30
DZ23B33
DZ23B36
DZ23B39
DZ23B43
DZ23B47
DZ23B51
V1
V2
75 (<83)
80 (<95)
80 (<95)
80 (<95)
80 (<95)
80 (<95)
70 (<78)
30 (<60)
10 (<40)
4.8 (<10)
4.5 (<8)
4 (<7)
<500
<500
<500
<500
<500
<500
<500
<480
<400
<200
<150
<50
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
-
-
-
-
-
-
-
V3
V4
V5
V6
V7
V8
4
>0.8
>1
V9
5.49
6.08
6.66
7.35
8.04
8.92
9.8
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52
6
V10
V11
V12
V13
V14
V15
V16
V17
V18
V19
V20
V21
V22
V23
V24
V25
V26
V27
V28
V29
V30
V31
V32
7
>2
7
>3
-3
4
7
>5
4.5 (<7)
4.8 (<10)
5.2 (<15)
6 (<20)
<50
7
>6
<50
5
8
>7
<70
5
8
>7.5
>8.5
>9
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50
<70
5
9
7 (<20)
<90
6
9
9 (<25)
<110
<110
<170
<170
<220
<220
<220
<250
<250
<250
<250
<300
<700
<750
<750
7
9
>10
>11
>12
>14
>15
>17
>18
>20
>22.5
>25
>27
>29
>32
>35
>38
11 (<30)
13 (<40)
18 (<50)
20 (<50)
25 (<55)
28 (<80)
30 (<80)
35 (<80)
40 (<80)
40 (<90)
50 (<90)
60 (<100)
70 (<100)
70 (<100)
7
9
8
0.5
0.5
10
10
10
10
10
10
10
12
12
12
12
8
8
8
8
8
8
8
8
10
10
10
10
1)
Tested with pulses tp = 5 ms
Document Number 85765
Rev. 1.5, 08-Jul-04
www.vishay.com
3
DZ23-Series
Vishay Semiconductors
VISHAY
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
18117
18114
Figure 1. Forward characteristics
Figure 4. Dynamic Resistance vs. Zener Current
18115
18118
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
Figure 5. Capacitance vs. Zener Voltage
°C
18119
18116
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
Figure 6. Dynamic Resistance vs. Zener Current
www.vishay.com
4
Document Number 85765
Rev. 1.5, 08-Jul-04
DZ23-Series
Vishay Semiconductors
VISHAY
°C
18120
18123
Figure 7. Dynamic Resistance vs. Zener Current
Figure 10. Temperature Dependence of Zener Voltage vs. Zener
Voltage
°C/W
18124
18121
Figure 8. Thermal Differential Resistance vs. Zener Voltage
Figure 11. Change of Zener Voltage vs. Junction Temperature
°C
18122
18125
Figure 9. Dynamic Resistance vs. Zener Voltage
Figure 12. Temperature Dependence of Zener Voltage vs. Zener
Voltage
Document Number 85765
Rev. 1.5, 08-Jul-04
www.vishay.com
5
DZ23-Series
Vishay Semiconductors
VISHAY
18126
Figure 13. Change of Zener Voltage vs. Junction Temperature
18127
Figure 14. Change of Zener voltage from turn-on up to the point of
thermal equilibrium vs. Zener voltage
18128
Figure 15. Change of Zener voltage from turn-on up to the point of
thermal equilibrium vs. Zener voltage
www.vishay.com
6
Document Number 85765
Rev. 1.5, 08-Jul-04
DZ23-Series
Vishay Semiconductors
VISHAY
18111
Figure 16. Breakdown Characteristics
18112
Figure 17. Breakdown Characteristics
Document Number 85765
Rev. 1.5, 08-Jul-04
www.vishay.com
7
DZ23-Series
Vishay Semiconductors
VISHAY
18113
Figure 18. Breakdown Characteristics
Package Dimensions in mm (Inches)
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
2.6 (.102)
2.35 (.092)
0.4 (.016)
0.4 (.016)
ISO Method E
3.1 (.122)
Mounting Pad Layout
2.8 (.110)
0.4 (.016)
0.52 (0.020)
3
0.9 (0.035)
2.0 (0.079)
1
2
0.95 (.037)
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
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8
Document Number 85765
Rev. 1.5, 08-Jul-04
DZ23-Series
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85765
Rev. 1.5, 08-Jul-04
www.vishay.com
9
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