EDF1AM/72-E3 [VISHAY]

DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode;


型号：	EDF1AM/72-E3
厂家：	VISHAY
描述：	DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode 光电二极管
文件：	总2页 (文件大小：21K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

EDF1AM thru EDF1DM

Vishay Semiconductors

formerly General Semiconductor

Miniature Glass Passivated

Ultrafast Bridge Rectifier

Reverse Voltage 50 and 200V

Forward Current 1.0A

Case Style DFM

Features

• Plastic package used has Underwriters Laboratory

Flammability Classification 94V-0

• This series is UL listed under Recognized Component

Index, file number E54214

0.315 (8.00)

0.255 (6.5)

0.245 (6.2) 0.285 (7.24)

• Glass passivated chip junction

• High forward surge current capability

• Ideal for printed circuit boards

• Superfast recovery times for high efficiency

• High temperature soldering guaranteed:

260°C/10 seconds, at 5 lbs. (2.3kg) tension

0.335 (8.51)

0.320 (8.12)

0.130 (3.3)

0.120 (3.05)

0.080 (2.03)

0.050 (1.27)

Mechanical Data

Case: Molded plastic body over passivated junctions

0.045 (1.14)

0.035 (0.89)

0.013 (3.3)

0.185 (4.69)

0.150 (3.81)

0.0086 (0.22)

0.023 (0.58)

0.018 (0.46)

Terminals: Plated leads solderable per MIL-STD-750,

0.350 (8.9)

0.300 (7.6)

0.075 (1.90)

0.055 (1.39)

Method 2026

0.205 (5.2)

0.195 (5.0)

Polarity: Polarity symbols as marked on body

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight: 0.014 oz., 0.4 g

Packaging codes/options:

45/50 ea. per Bulk Tube

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol EDF1AM EDF1BM EDF1CM EDF1DM

Unit

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

106

150

200

140

200

Maximum DC blocking voltage

100

Maximum average forward output

rectified current at T_A= 40°C

I_F(AV)

1.0

Peak forward surge current single half sine-wave super-

imposed on rated load (JEDEC Method) T_J= 150°C

I_FSM

I²t

Rating for fusing (t < 8.3ms)

A²sec

°C/W

°C

Typical thermal resistance per leg (Note 1)

R_θJA

R_θJL

Operating junction and storage temperature range

T_J, T_STG

–55 to +150

Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol EDF1AM EDF1BM EDF1CM EDF1DM

Unit

Max. instantaneous forward voltage drop per leg at 1.0A

V_F

1.05

Maximum reverse current

at rated DC blocking voltage

T_A= 25°C

T_A= 125°C

5.0

1.0

µA

I_R

Maximum reverse recovery time at

I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A

t_rr

Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.51 x 0.51" (13 x 13mm) copper pads

Document Number 88577

18-Mar-02

www.vishay.com

EDF1AM thru EDF1DM

Vishay Semiconductors

formerly General Semiconductor

Ratings and

Characteristic Curves (T_A= 25°C unless otherwise noted)

Fig. 2 - Maximum Non-Repetitive Peak

Forward Surge Current

Fig. 1 - Derating Curves Output

Rectified Current

1.0

60 H Resistive

or Inductive Load

T = 150°C

Single Sine-Wave

(JEDEC Method)

P.C.B. Mounted on

0.75

0.5

0.25

0.51 x 0.51" (13 x 13mm)

Copper Pads with 0.06"

(1.5mm) Lead Length

Capacitive

Loads

/ I = 5.0

PK AV

/ I = 10

PK AV

1.0 Cycle

/ I = 20

PK AV

140

160

100

120

Ambient Temperature (°C)

Number of Cycles at 60 Hz

Fig. 3 - Typical Forward Characteristics

Per Leg

Fig. 4 - Typical Reverse Leakage

Characteristics Per Leg

1,000

100

T = 125°C

0.1

T = 25°C

Pulse width = 300µs

1% Duty Cycle

T = 25°C

0.01

0.1

0.6

0.8

1.0

1.2

1.4

0.4

100

Instantaneous Forward Voltage (V)

Percent of Rated Peak Reverse Voltage (%)

Fig. 5 - Typical Junction Capacitance

Per Leg

5.0

T = 25°C

f = 1.0 MHz

Vsig = 50mVp-p

0.1

100 200

Reverse Voltage (V)

www.vishay.com

Document Number 88577

18-Mar-02

相关型号：