EDF1BM-E3/45 [VISHAY]
DIODE GPP 1A 100V 50NS 4DIP;
| 型号： | EDF1BM-E3/45 |
| 厂家： | 
VISHAY |
| 描述： | DIODE GPP 1A 100V 50NS 4DIP 光电二极管 |
| 文件： | 总5页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EDF1AM, EDF1BM, EDF1CM, EDF1DM
www.vishay.com
Vishay General Semiconductor
Miniature Glass Passivated Ultrafast Bridge Rectifier
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Ultrafast reverse recovery time for high
frequency
• Applicable for automated insertion
~
• High surge current capability
~
• Solder dip 275 °C max. 10 s, per JESD 22-B106
~
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
~
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
Case Style DFM
LINKS TO ADDITIONAL RESOURCES
3
D
MECHANICAL DATA
3D Models
Case: DFM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
PRIMARY CHARACTERISTICS
IF(AV)
1 A
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
VRRM
50 V, 100 V, 150 V, 200 V
IFSM
50 A
5 μA
IR
VF at IF = 1.0 A
trr
Polarity: as marked on body
1.05 V
50 ns
150 °C
DFM
TJ max.
Package
Circuit configuration
Quad
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
EDF1AM
EDF1BM EDF1CM EDF1DM
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
106
150
200
140
200
V
V
V
A
Maximum DC blocking voltage
100
Maximum average forward output rectified current at TA = 40 °C
IF(AV)
1.0
50
10
Peak forward surge current single sine-wave superimposed on
rated load
IFSM
A
Rating for fusing (t < 8.3 ms)
I2t
A2s
°C
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
Revision: 03-Sep-2020
Document Number: 88577
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
EDF1AM, EDF1BM, EDF1CM, EDF1DM
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL EDF1AM EDF1BM EDF1CM EDF1DM UNIT
Maximum instantaneous forward voltage drop
per diode
1.0 A
VF
IR
1.05
V
TA = 25 °C
5.0
1.0
μA
Maximum reverse current at rated DC blocking
voltage per diode
TA = 125 °C
mA
Maximum reverse recovery time
per diode
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
50
ns
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
EDF1AM
EDF1BM
EDF1CM
EDF1DM
UNIT
RJA
38
12
(1)
Typical thermal resistance
°C/W
RJL
Note
(1)
Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.5" x 0.5" (13 mm x 13 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
EDF1DM-E3/45
0.418
45
50
Tube
Revision: 03-Sep-2020
Document Number: 88577
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
EDF1AM, EDF1BM, EDF1CM, EDF1DM
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.0
0.75
0.5
1000
100
10
60 Hz Resistive
or Inductive Load
P.C.B. Mounted on
TJ = 125 °C
0.51 x 0.51" (13 x 13 mm)
Copper Pads with 0.06"
(1.5 mm) Lead Length
Capacitive
Loads
IPK/IAV = 5.0
IPK/IAV = 10
1
0.25
0
T
J = 25 °C
IPK/IAV = 20
0.1
0
20
80
100
120
140
160
40
60
100
20
40
60
80
Percent of Rated Peak Reverse Voltage (%)
Ambient Temperature (°C)
Fig. 1 - Derating Curves Output Rectified Current
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
60
30
TJ = 25 °C
TJ = 150 °C
f = 1.0 MHz
Vsig = 50 mVp-p
50
40
30
20
10
0
Single Sine-Wave
25
20
15
10
5
1.0 Cycle
10
0
1
100
0.1
1
10
100
1000
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance Per Diode
Per Diode
10
1
0.1
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.6
0.8
1.0
1.2
1.4
0.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Forward Characteristics Per Diode
Revision: 03-Sep-2020
Document Number: 88577
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
EDF1AM, EDF1BM, EDF1CM, EDF1DM
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style DFM
0.255 (6.5)
0.245 (6.2)
0.315 (8.00)
0.285 (7.24)
0.335 (8.51)
0.320 (8.12)
0.080 (2.03)
0.050 (1.27)
0.130 (3.30)
0.120 (3.05)
0.045 (1.14)
0.035 (0.89)
0.013 (0.33)
0.0086 (0.22)
0.185 (4.69)
0.150 (3.81)
0.023 (0.58)
0.018 (0.46)
0.350 (8.9)
0.300 (7.6)
0.205 (5.2)
0.195 (5.0)
0.075 (1.90)
0.055 (1.39)
Revision: 03-Sep-2020
Document Number: 88577
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 09-Jul-2021
Document Number: 91000
1
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