EGF1D [VISHAY]
ULTRAFAST SURFACE MOUNT RECTIFIER; 超快表面贴装整流器
| 型号： | EGF1D |
| 厂家： | 
VISHAY |
| 描述： | ULTRAFAST SURFACE MOUNT RECTIFIER |
| 文件： | 总2页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EGF1A THRU EGF1D
ULTRAFAST SURFACE MOUNT RECTIFIER
Reverse Voltage - 50 to 200 Volts Forward Current - 1.0 Ampere
FEATURES
DO-214BA
♦ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
♦ Ideal for surface mount automotive applications
♦ High temperature metallurgically bonded construction
♦ Superfast recovery times for high efficiency
0.060 (1.52)
0.040 (1.02)
♦ Glass passivated cavity-free junction
♦ Built-in strain relief
0.187 (4.75)
0.167 (4.24)
0.0105 (0.27)
0.0065 (0.17)
♦ Easy pick and place
♦ High temperature soldering guaranteed: 450°C/5 seconds
at terminals
0.108 (2.74)
0.118 (3.00)
0.106 (2.69)
0.098 (2.49)
♦ Complete device submersible temperature of
265°C for 10 seconds in solder bath
0.114 (2.90)
0.152
TYP.
0.060 (1.52)
0.030 (0.76)
0.094 (2.39)
0.006
0.226 (5.74)
0.196 (4.98)
MECHANICAL DATA
Case: JEDEC DO-214BA molded plastic over glass body
Dimensions in inches and (millimeters)
*Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead
forming by Patent No. 5,151,846
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.0048 ounces, 0.120 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
EGF1A
EA
50
EGF1B
EB
EGF1C
EC
EGF1D
ED
UNITS
Device Marking Code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
100
70
150
105
150
200
140
200
Volts
Volts
Volts
35
Maximum DC blocking voltage
50
100
Maximum average forward rectified current
at TL=125°C
I(AV)
1.0
Amps
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
30.0
1.0
Maximum instantaneous forward voltage at 1.0A
VF
IR
Volts
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=125°C
5.0
50.0
µA
Typical reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
trr
50.0
15.0
ns
CJ
pF
ΘJA
ΘJL
R
R
85.0
30.0
°C/W
°C
Operating junction and storage temperature range
TJ,TSTG
-65 to +175
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied VR=4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead
P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas
4/98
RATINGS AND CHARACTERISTICS CURVES EGF1A THRU EGF1D
FIG. 1 - MAXIMUM FORWARD CURRENT
DERATING CURVE
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
1.0
0.5
0
30
25
T =T max.
8.3ms SINGLE HALF SINE WAVE
(JEDEC Method)
J
J
RESISTIVE OR
20
15
INDUCTIVE LOAD
P.C.B. MOUNTED on
0.2 x 0.2” (5.0 x 5.0mm)
COPPER PAD AREAS
10
5.0
0
0
25 50
75
100 125 150 175
LEAD TEMPERATURE, °C
1
100
10
NUMBER OF CYCLES AT 60 HZ
FIG. 3 -TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
10
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
1,000
PULSE WIDTH=300µs
1% DUTY CYCLE
100
10
T =150°C
J
T =25°C
J
T =150°C
J
1
T =100°C
J
1
0.1
0
0.1
T =25°C
J
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
0.01
0.2 0.4 0.6 0.8
1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
100
10
70
60
50
40
30
20
T =25°C
J
f=1.0 MHz
Vsig=50mVp-p
1
10
0
0.1
0.01
0.1
10
REVERSE VOLTAGE, VOLTS
100
1
1
0.1
10
100
t, PULSE DURATION, sec.
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