EGP20C-E3/51 [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN;
| 型号： | EGP20C-E3/51 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN 功效 二极管 |
| 文件： | 总5页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EGP20A thru EGP20G
Vishay General Semiconductor
Glass Passivated Ultrafast Rectifier
FEATURES
• Cavity-free glass-passivated junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder Dip 260 °C, 40 seconds
DO-204AC (DO-15)
* Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and free-
wheeling application in switching mode converters and
MAJOR RATINGS AND CHARACTERISTICS
inverters
for
consumer,
computer
and
IF(AV)
VRRM
IFSM
trr
2.0 A
50 V to 400 V
75 A
telecommunication.
MECHANICAL DATA
Case: DO-204AC, molded epoxy over glass body
50 ns
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
VF
0.95 V, 1.25 V
150 °C
Tj max.
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
V
V
V
Maximum DC blocking voltage
100
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 55 °C
IF(AV
)
2.0
75
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
A
Operating and storage temperature range
TJ, TSTG
- 65 to + 150
°C
Document Number 88583
17-May-06
www.vishay.com
1
EGP20A thru EGP20G
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G UNIT
Maximum instantaneous
forward voltage
at 2.0 A
VF
0.95
1.25
V
Maximum DC reverse
current at rated DC
blocking voltage
T
T
A = 25 °C
A = 125 °C
5.0
100
IR
µA
Maximum reverse
recovery time
at IF = 0.5 A, IR = 1.0 A,
rr = 0.25 A
trr
50
ns
I
Typical junction
capacitance
at 4.0 V, 1 MHz
CJ
70
45
pF
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G UNIT
RθJA
RθJL
40
15
Typical thermal resistance (1)
°C/W
Note:
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
ORDERING INFORMATION
PREFERRED P/N
EGP20D-E3/54
EGP20D-E3/73
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.452
54
73
4000
2000
13" Diameter Paper Tape & Reel
Ammo Pack Packaging
0.452
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
3.0
90
75
60
45
30
15
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
TJ = TJ max.
8.3 ms Single Half Sine-Wave
2.0
1.0
0
0
1
10
100
0
25
50
75
100
125
150
175
Number of Cycles at 60 Hz
Ambient Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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Document Number 88583
17-May-06
EGP20A thru EGP20G
Vishay General Semiconductor
100
10
100
10
1
EGP20A ~ EGP20D
Tj = 150 °C
EGP20F ~ EGP20G
Tj = 150 °C
Tj = 125 °C
Tj = 125 °C
Tj = 100 °C
1
0.1
0.01
Tj = 100 °C
Tj = 25 °C
0.1
Tj = 25 °C
0.01
0.001
0.2
0.4
0.6
0.8
1.0
1.2
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Peak Reverse Voltage (%)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 6. Typical Reverse Leakage Characteristics
100
140
EGP20A ~ EGP20D
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
120
100
80
60
40
20
0
Tj = 150 °C
10
Tj = 125 °C
1
Tj = 100 °C
0.1
0.01
Tj = 25 °C
EGP20A - EGP20D
EGP20F & EGP20G
0.001
0
20
40
60
80
100
0.1
1
10
Reverse Voltage (V)
100
1000
Percent of Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
Figure 7. Typical Junction Capacitance
100
100
10
EGP20F ~ EGP20G
Tj = 150 °C
10
Tj = 125 °C
1
Tj = 100 °C
1
0.1
Tj = 25 °C
0.01
0.1
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Figure 5. Typical Instantaneous Forward Characteristics
Figure 8. Typical Transient Thermal Impedance
Document Number 88583
17-May-06
www.vishay.com
3
EGP20A thru EGP20G
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
Dia.
1.0 (25.4)
min.
0.300 (7.6)
0.230 (5.8)
0.140 (3.6)
0.104 (2.6)
Dia.
1.0 (25.4)
min.
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4
Document Number 88583
17-May-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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1
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