EGP20F/58 [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN;型号: | EGP20F/58 |
厂家: | VISHAY |
描述: | Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN |
文件: | 总5页 (文件大小:332K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
EGP20A thru EGP20G
Vishay General Semiconductor
Glass Passivated Ultrafast Rectifier
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
trr
2.0 A
50 V to 400 V
75 A
50 ns
VF
0.95 V, 1.25 V
150 °C
Tj max.
DO-204AC (DO-15)
* Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
Features
Mechanical Data
• Cavity-free glass-passivated junction
• Ultrafast reverse recovery time
• Low forward voltage drop
Case: DO-204AC, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder Dip 260 °C, 40 seconds
Polarity: Color band denotes cathode end
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer and Telecommuni-
cation
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter
Symbol EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G
Unit
V
Maximum repetitive peak reverse voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
Maximum RMS voltage
V
V
A
Maximum DC blocking voltage
100
Maximum average forward rectified current 0.375"
(9.5 mm) lead length at TA = 55 °C
IF(AV
)
2.0
75
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
IFSM
A
Operating and storage temperature range
TJ,TSTG
- 65 to + 150
°C
Document Number 88583
10-Aug-05
www.vishay.com
1
EGP20A thru EGP20G
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified
Parameter
Test condition
at 2.0 A
Symbol EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G Unit
Maximum instantaneous
forward voltage
VF
0.95
1.25
V
Maximum DC reverse current TA = 25 °C
IR
5.0
µA
at rated DC blocking voltage
100
TA = 125 °C
Maximum reverse recovery
time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
50
ns
Typical junction capacitance
at 4.0 V, 1 MHz
CJ
70
45
pF
Thermal Characteristics
TA = 25 °C unless otherwise specified
Parameter
Symbol EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G Unit
Typical thermal resistance (1)
RθJA
RθJL
40
15
°C/W
Notes:
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
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Document Number 88583
10-Aug-05
EGP20A thru EGP20G
Vishay General Semiconductor
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
3.0
100
Resistive or Inductive Load
EGP20A~EGP20D
0.375" (9.5mm) Lead Length
Tj = 150 °C
10
Tj = 125 °C
Tj = 100 °C
2.0
1
0.1
0.01
1.0
0
Tj = 25 °C
0.001
0
25
50
75
100
125
150
175
0
20
40
60
80
100
Ambient Temperature (°C)
Percent of Peak Reverse Voltage (%)
Figure 1. Maximum Forward Current Derating Curve
Figure 4. Typical Reverse Leakage Characteristics
90
100
TJ = TJ max.
EGP20F~EGP20G
8.3ms Single Half Sine-Wave
75
Tj = 150 °C
10
60
45
30
15
0
Tj = 125 °C
1
Tj = 100 °C
0.1
Tj = 25 °C
0.01
1
10
100
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
Number of Cycles at 60 H
Z
Instantaneous Forward Voltage (V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 5. Typical Instantaneous Forward Characteristics
100
100
EGP20A~EGP20D
EGP20F~EGP20G
T
j
= 150 °C
Tj = 150 °C
10
1
10
Tj
= 125 °C
Tj = 125 °C
Tj
= 100 °C
1
0.1
Tj = 100 °C
Tj = 25 °C
0.1
0.01
Tj = 25 °C
0.01
0.001
0.2
0.4
0.6
0.8
1
1.2
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Peak Reverse Voltage (%)
Figure 6. Typical Reverse Leakage Characteristics
Figure 3. Typical Instantaneous Forward Characteristics
Document Number 88583
10-Aug-05
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3
EGP20A thru EGP20G
Vishay General Semiconductor
140
100
10
TJ = 25°C
f = 1.0 MHZ
Vsig = 50mVp-p
120
100
80
60
1
40
20
0
EGP20A - EGP20D
EGP20F & EGP20G
0.1
0.01
10
t, Pulse Duration (sec.)
0.1
1
100
0.1
1
10
Reverse Voltage (V)
100
1000
Figure 7. Typical Junction Capacitance
Figure 8. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
Dia.
1.0 (25.4)
min.
0.300 (7.6)
0.230 (5.8)
0.140 (3.6)
0.104 (2.6)
Dia.
1.0 (25.4)
min.
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4
Document Number 88583
10-Aug-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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1
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