EGP30F/54 [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, PLASTIC, GP20, 2 PIN;型号: | EGP30F/54 |
厂家: | VISHAY |
描述: | Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, PLASTIC, GP20, 2 PIN |
文件: | 总3页 (文件大小:211K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
EGP30A thru EGP30G
Vishay Semiconductors
Glass Passivated Ultrafast Rectifier
®
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
trr
3.0 A
50 V to 400 V
125 A
50 ns
*
d
VF
0.95 V, 1.25 V
150 °C
e
t
n
e
t
Tj max.
a
P
*Glass Encapsulation
GP20
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly to
Patent No. 3,930,306
Features
Mechanical Data
• Cavity-free glass-passivated junction
• Ultrafast reverse recovery time
• Low forward voltage drop
Case: GP20, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder Dip 260° C, 40 seconds
Polarity: Color band denotes cathode end
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer and Telecommuni-
cation
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter
Symbol EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G
Unit
V
Maximum repetitive peak reverse voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
Maximum RMS voltage
V
V
A
Maximum DC blocking voltage
100
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 55 °C
IF(AV)
3.0
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
125
A
Operating and storage temperature range
TJ,TSTG
- 65 to + 150
°C
Document Number 88584
10-Aug-05
www.vishay.com
1
EGP30A thru EGP30G
Vishay Semiconductors
Electrical Characteristics
TA = 25 °C unless otherwise specified
Parameter
Test condition
at 3.0 A
Symbol EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G Unit
Maximum instantaneous
forward voltage
VF
0.95
1.25
V
Maximum DC reverse current TA = 25 °C
IR
5.0
µA
at rated DC blocking voltage
100
TA = 125 °C
Maximum reverse
recovery time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
50
ns
Typical junction capacitance at 4.0 V, 1 MHz
CJ
85
75
pF
Thermal Characteristics
TA = 25 °C unless otherwise specified
Parameter
Symbol EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G
Unit
Typical thermal resistance (1)
RθJA
RθJL
20
8.0
°C/W
Notes:
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
3.0
2.0
1.0
175
Resistive or Inductive Load
0.375” (9.5mm) Lead Length
TJ = TJ max.
8.3 ms Single Half Sine-Wave
150
125
100
75
50
25
0
1
10
100
0
25
50
75 100 125 150 175
Number of Cycles at 60 H
Ambient Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
z
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
Document Number 88584
10-Aug-05
2
EGP30A thru EGP30G
Vishay Semiconductors
50
10
210
T
J
= 25 °C
f = 1.0 MH
Vsig = 50mVp-p
Z
180
150
120
90
TJ = 150°C
TJ = 25°C
1
0.1
Pulse Width = 300µs
1% Duty Cycle
60
30
EGP30A — EGP30D
EGP30F & EGP30G
EGP30A — EGP30D
EGP30F & EGP30G
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
1
10
Reverse Voltage (V)
100
1000
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
100
100
10
TJ = 150°C
10
TJ = 125°C
1
TJ = 75°C
0.1
1
TJ = 25°C
0.01
0.1
0.01
0.001
0
20
40
60
80
100
10
t, Pulse Duration (sec.)
0.1
1
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
GP20
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.042 (1.07)
0.037 (0.94)
DIA.
Document Number 88584
10-Aug-05
www.vishay.com
3
相关型号:
EGP30F/56
Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
VISHAY
EGP30F/58
Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
VISHAY
EGP30F/62
Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
VISHAY
EGP30F/66
Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
VISHAY
EGP30F/70
Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
VISHAY
EGP30F/71
Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
VISHAY
EGP30F/72
Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
VISHAY
EGP30F/73
Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
VISHAY
EGP30F/91
Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
VISHAY
EGP30F/92
Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
VISHAY
EGP30FHE3/73
DIODE 3 A, 300 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, GP20, 2 PIN, Rectifier Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明