EGP50B-E3/23 [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GP20, 2 PIN;
| 型号： | EGP50B-E3/23 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GP20, 2 PIN 功效 二极管 |
| 文件： | 总4页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EGP50A thru EGP50G
Vishay General Semiconductor
Glass Passivated Ultrafast Rectifier
FEATURES
• Cavity-free glass-passivated junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder Dip 260 °C, 40 seconds
*Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly to
Patent No. 3,930,306
GP20
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and free-
wheeling application in switching mode converters
and inverters for consumer, computer and
telecommunication.
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
VRRM
IFSM
trr
5.0 A
50 V to 400 V
150 A
MECHANICAL DATA
Case: GP20, molded epoxy over glass body
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
50 ns
VF
0.95 V, 1.25 V
150 °C
Tj max.
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL EGP50A EGP50B EGP50C EGP50D EGP50F EGP50G
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
V
V
V
Maximum DC blocking voltage
100
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TL = 55 °C
IF(AV)
5
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
150
A
Operating and storage temperature range
TJ, TSTG
- 65 to + 150
°C
Document Number 88585
17-May-06
www.vishay.com
1
EGP50A thru EGP50G
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS SYMBOL EGP50A EGP50B EGP50C EGP50D EGP50F EGP50G UNIT
Maximum instantaneous
forward voltage
at 5.0 A
VF
0.95
1.25
V
Maximum DC reverse current
at rated DC blocking voltage
TA = 25 °C
TA =125 °C
5.0
50
IR
µA
Maximum reverse
recovery time
at IF = 0.5 A, IR = 1.0 A,
rr = 0.25 A
trr
50
ns
I
Typical junction capacitance
at 4.0 V, 1 MHz
CJ
95
75
pF
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL EGP50A EGP50B EGP50C EGP50D EGP50F EGP50G UNIT
RθJA
RθJL
20
5.0
Typical thermal resistance (1)
°C/W
Note:
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
ORDERING INFORMATION
PREFERRED P/N
EGP50G-E3/54
EGP50G-E3/73
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.01
1.01
54
73
1400
1000
13" Diameter Paper Tape & Reel
Ammo Pack Packaging
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
175
150
125
100
75
6.0
Resistive or Inductive Load
TJ = TJ max.
8.3 ms Single Half Sine-Wave
5.0
4.0
3.0
2.0
1.0
0
Copper Heatsinks
50
TL
L
25
0.375" (9.5 mm) Lead Length
0
0
25
50
75
100
125
150
175
1
10
100
Number of Cycles at 60 H
Lead Temperature (°C)
Z
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88585
17-May-06
EGP50A thru EGP50G
Vishay General Semiconductor
50
10
210
180
150
120
90
Pulse Width = 300 µs
1 % Duty Cycle
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = 150 °C
1
TJ = 25 °C
60
0.1
30
EGP50A - EGP50D
EGP50F & EGP50G
EGP50A - EGP50D
EGP50F & EGP50G
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
1
10
100
1000
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
100
100
TJ = 150 °C
10
TJ = 125 °C
10
1.0
0.1
1
TJ = 75 °C
0.1
0.01
TJ = 25 °C
0.001
0
20
40
60
80
100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
GP20
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.042 (1.07)
0.037 (0.94)
DIA.
Document Number 88585
17-May-06
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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