ES1PD-HE3/85A [VISHAY]
1A, 200V, SILICON, SIGNAL DIODE, DO-220AA, LEAD FREE, PLASTIC, SMP, 2 PIN;
| 型号： | ES1PD-HE3/85A |
| 厂家： | 
VISHAY |
| 描述： | 1A, 200V, SILICON, SIGNAL DIODE, DO-220AA, LEAD FREE, PLASTIC, SMP, 2 PIN 瞄准线 光电二极管 |
| 文件： | 总4页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES1PB, ES1PC & ES1PD
Vishay General Semiconductor
New Product
High Current Density Surface Mount Ultrafast Rectifiers
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Glass passivated chip junction
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power losses
• Low thermal resistance
DO-220AA (SMP)
• Meets MSL level 1 per J-STD-020C, LF max peak
of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in secondary rectification and free-wheeling
MAJOR RATINGS AND CHARACTERISTICS
for ultrafast switching speeds of ac-to-dc and dc-to-dc
converters for both consumer and automotive
applications.
IF(AV)
VRRM
trr
1 A
100 V, 150 V, 200 V
15 ns
MECHANICAL DATA
Case: DO-220AA (SMP)
VF
0.92 V
Tj max.
150 °C
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
ES1PB
EB
ES1PC
EC
ES1PD
ED
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (see Fig. 1)
VRRM
IF(AV)
100
150
200
V
A
1.0
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
30
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Maximum instantaneous
forward voltage
at IF = 0.6 A, Tj = 25 °C
at IF = 1 A, Tj = 25 °C
0.865
0.920
VF
V
Maximum reverse current at
rated VR
Tj = 25 °C
Tj = 125 °C
5.0
500
IR
trr
µA
ns
(1)
Maximumreverse recoverytime at IF = 0.5 A, IR = 1 A, Irr = 0.25 A
15
Document Number 88918
23-Jun-06
www.vishay.com
1
ES1PB, ES1PC & ES1PD
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
at IF = 1.0 A, VR = 30 V di/dt = 50 A/µs, Irr = 10 % IRM Tj = 25 °C
at IF = 1.0 A, VR = 30 V di/dt = 50 A/µs, Irr = 10 % IRM Tj = 100 °C
25
30
Typical reverse recovery time
trr
ns
at IF = 1.0 A, VR = 30 V di/dt = 50 A/µs, Irr = 10 % IRM Tj = 25 °C
at IF = 1.0 A, VR = 30 V di/dt = 50 A/µs, Irr = 10 % IRM Tj = 100 °C
8
10
Typical reverse recovery time
Typical junction capacitance
QRR
CJ
nC
pF
at 4.0 V, 1 MHz
10
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
ES1PB
ES1PC
ES1PD
UNIT
105
15
RθJA
RθJL
RθJC
Typical thermal resistance (1)
°C/W
20
Note:
(1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0 mm copper pad areas. RθJL is measured
at the terminal of cathode band. RθJC is measured at the top centre of the body
ORDERING INFORMATION
PREFERRED P/N
ES1PB-E3/84A
ES1PB-E3/85A
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
3000
DELIVERY MODE
0.024
84A
85A
7" Diameter Plastic Tape & Reel
13" Diameter Plastic Tape & Reel
0.024
10000
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
30
1.2
1.0
0.8
0.6
25
20
15
10
5
0.4
TL measured
at the cathode band terminal
0.2
0
0
80
90
100
110
120
130
140
150
1
10
Number of Cycles at 50 Hz
100
Lead Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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Document Number 88918
23-Jun-06
ES1PB, ES1PC & ES1PD
Vishay General Semiconductor
100
100
10
Tj = 150 °C
1
10
Tj = 25 °C
0.1
Tj = 125 °C
1
0.1
0.01
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
10000
1000
100
1000
100
10
Tj = 150 °C
Tj = 125 °C
10
1
Tj = 25 °C
0.1
0.01
1
0.01
10
20
30
40
50
60
70
80
90 100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-220AA (SMP)
0.012 (0.30) REF
Cathode band
0.036 (0.91)
0.024 (0.61)
0.053 (1.35)
0.041 (1.05)
0.086 (2.18)
0.074 (1.88)
0.032 (0.80)
0.016 (0.40)
0.103 (2.60)
0.087 (2.20)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.030
(0.762)
0.105
(2.67)
0.025
(0.635)
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
0.050
(1.27)
0.100
0.012 (0.30)
(2.54)
0.000 (0.00)
0.018 (0.45)
0.006 (0.15)
Document Number 88918
23-Jun-06
www.vishay.com
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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