ES2A-M3/52T [VISHAY]
DIODE GEN PURP 50V 2A DO214AA;型号: | ES2A-M3/52T |
厂家: | VISHAY |
描述: | DIODE GEN PURP 50V 2A DO214AA |
文件: | 总5页 (文件大小:95K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ES2A, ES2B, ES2C, ES2D
Vishay General Semiconductor
www.vishay.com
Surface-Mount Ultrafast Plastic Rectifier
FEATURES
Available
• Glass passivated pellet chip junction
• Ideal for automated placement
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power losses
• High forward surge capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
SMB (DO-214AA)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
Anode
Cathode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
LINKS TO ADDITIONAL RESOURCES
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive, and telecommunication.
3
D
3D Models
MECHANICAL DATA
Case: SMB (DO-214AA)
PRIMARY CHARACTERISTICS
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHME3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
IF(AV)
2.0 A
VRRM
50 V, 100 V, 150 V, 200 V
IFSM
50 A
20 ns
trr
VF
0.90 V
(“_X” denotes revision code e.g. A, B, .....)
TJ max.
150 °C
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Package
SMB (DO-214AA)
Single
Circuit configuration
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
ES2A
EA
ES2B
EB
ES2C
EC
ES2D
ED
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
100
70
150
105
150
200
140
200
V
V
V
A
35
Maximum DC blocking voltage
Maximum average forward rectified current at TL = 110 °C
50
100
IF(AV)
2.0
50
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
A
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C
Revision: 01-Apr-2020
Document Number: 88587
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES2A, ES2B, ES2C, ES2D
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL ES2A ES2B ES2C ES2D UNIT
Maximum instantaneous forward
voltage
(1)
2.0 A
VF
0.90
V
TA = 25 °C
10
Maximum DC reverse current at rated
DC blocking voltage
IR
μA
ns
ns
TA = 100 °C
350
IF = 0.5 A, IR = 1.0 A,
rr = 0.25 A
Max. reverse recovery time
trr
trr
20
l
TJ = 25 °C
TJ = 100 °C
TJ = 25 °C
TJ = 100 °C
30
50
10
25
18
IF = 2.0 A, VR = 30 V,
dI/dt = 50 A/μs, Ir = 10 % IRM
Maximum reverse recovery time
IF = 2.0 A, VR = 30 V,
dI/dt = 50 A/μs, Ir = 10 % IRM
Maximum stored charge
Qrr
CJ
nC
pF
Typical junction capacitance
4.0 V, 1 MHz
Note
(1)
Pulse test: 300 ms pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL ES2A ES2B ES2C ES2D UNIT
(1)
RθJA
RθJL
75
20
Typical thermal resistance
°C/W
(1)
Note
(1)
Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
ES2D-E3/52T
0.096
0.096
0.096
0.096
0.096
0.096
0.096
0.096
52T
5BT
H
750
3200
750
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
ES2D-E3/5BT
ES2DHE3_A/H (1)
ES2DHE3_A/I (1)
ES2D-M3/52T
ES2D-M3/5BT
ES2DHM3_A/H (1)
ES2DHM3_A/I (1)
I
3200
750
52T
5BT
H
3200
750
I
3200
Note
(1)
AEC-Q101 qualified
Revision: 01-Apr-2020
Document Number: 88587
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES2A, ES2B, ES2C, ES2D
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
3.0
2.0
1.0
0
10 000
1000
100
10
10000
1000
100
T= 150 °C
TJ = 125 °C
TJ = 100 °C
1
TJ = 25 °C
TJ = -40 °C
Resistive or Inductive Load
P.C.B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0.1
0.01
0.001
10
80
90
100
110
120
130
140
150
0
20
40
60
80
100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
60
60
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
8.3 ms Single Half Sine-Wave
at TL = 110 °C
50
40
30
20
10
0
50
40
30
20
10
0
1
10
100
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
Junction to Ambient
Axis Title
100
10
1
100
10
10000
1000
100
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1
TJ = 25 °C
TJ = -40 °C
0.1
0.01
Mounted on 5.0 mm x 5.0 mm copper pad
10
0.1
0.001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
10
1000
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Transient Thermal Impedance
Revision: 01-Apr-2020
Document Number: 88587
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES2A, ES2B, ES2C, ES2D
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMB (DO-214AA)
Cathode Band
Mounting Pad Layout
0.085 (2.159) MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.220 (5.59) REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 01-Apr-2020
Document Number: 88587
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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Revision: 09-Jul-2021
Document Number: 91000
1
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