ES3G/9T [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AB, PLASTIC, SMC, 2 PIN;
| 型号： | ES3G/9T |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AB, PLASTIC, SMC, 2 PIN 功效 光电二极管 |
| 文件： | 总4页 (文件大小：342K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES3F & ES3G
Vishay General Semiconductor
Surface Mount Ultrafast Plastic Rectifier
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
trr
3.0 A
300 V, 400 V
100 A
35 ns
VF
1.1 V
Tj max.
150 °C
DO-214AB (SMC)
Features
Mechanical Data
• Glass passivated chip junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
Case: DO-214AB (SMC)
Epoxy meets UL 94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: Color band denotes cathode end
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer and Telecommuni-
cation
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter
Device marking code
Symbol
ES3F
EF
ES3G
EG
Unit
Maximum repetitive peak reverse voltage
VRRM
VRWM
VRMS
IF(AV)
IFSM
300
400
V
V
V
A
A
Working peak reverse voltage
225
210
300
280
Maximum RMS voltage
Maximum average forward rectified current at TL = 110 °C
3.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
100
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Document Number 88590
08-Aug-05
www.vishay.com
1
ES3F & ES3G
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified
Parameter
Test condition
at 3.0 A (1)
Symbol
VF
ES3F
ES3G
Unit
V
Maximum instantaneous
forward voltage
1.1
Maximum DC reverse current
at working peak reverse
voltage
T
A = 25 °C
IR
10
350
µA
TA = 100 °C
Maximum reverse recovery
time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
trr
35
50
3.0
50
30
ns
ns
A
Maximum reverse recovery
time
IF = 1.0 A, di/dt = 100 A/µs,
VR = 30 V, Irr = 0.1 IRM
Maximum reverse recovery
current
IF = 1.0 A, di/dt = 100 A/µs,
VR = 30 V, Irr = 0.1 IRM
IRM
Qrr
CJ
Maximum stored charge
IF = 1.0 A, di/dt = 100 A/µs,
VR = 30 V, Irr = 0.1 IRM
nC
pF
Typical junction capacitance
Notes:
at 4.0 V, 1 MHz
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Thermal Characteristics
TA = 25 °C unless otherwise specified
Parameter
Typical thermal resistance (1)
Symbol
RθJA
RθJL
ES3F
ES3G
Unit
50
15
°C/W
Notes:
(1) Units mounted on P.C.B. 5.0 x 5.0 mm (0.013 mm thick) land areas
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
150
125
100
75
3.0
Resistive or Inductive Load
8.3 ms Single Half Sine-Wave
at TL = 110 °C
2.0
1.0
0
50
25
0
80
90
100
110
120
130
140
150
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
Document Number 88590
08-Aug-05
2
ES3F & ES3G
Vishay General Semiconductor
100
10
200
160
120
@ 5A,50A/µs
Tj = 150 °C
Tj = 125 °C
@ 2A,20A/µs
@ 5A,50A/µs
@ 2A, 20A/µs
@ 1A,100A/µs
1
0,1
Tj = 100 °C
80
@ 1A,100A/µs
40
Tj = 25 °C
trr
Qrr
0,01
0
25
50
75
100
125
150
175
0,1
0,3
0,5
0,7
0,9
1,1
1,3
1,5
Junction Temperature, °C
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Reverse Switching Characteristics
10000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
Tj = 150 °C
1000
Tj = 125 °C
Tj = 100 °C
100
10
10
Tj = 25 °C
1
0,1
1
0
20
40
60
80
100
0.1
1
10
100
Reverse Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Junction Capacitance
Package outline dimensions in inches (millimeters)
DO-214AB (SMC)
Mounting Pad Layout
Cathode Band
0.185 MAX.
(4.69 MAX.)
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.126 MIN.
(3.20 MIN.)
0.280 (7.11)
0.060 MIN.
(1.52 MIN.)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.320 REF
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Document Number 88590
08-Aug-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
相关型号：
ES3GB
Super Fast Surface Mount Rectifiers Reverse Voltage 50 to 1000 Volts Forward Current 3.0 Amperes
GOOD-ARK
©2020 ICPDF网 联系我们和版权申明