ESH3B-HE3 [VISHAY]

DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN, Rectifier Diode;
ESH3B-HE3
型号: ESH3B-HE3
厂家: VISHAY    VISHAY
描述:

DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN, Rectifier Diode

功效 瞄准线 光电二极管
文件: 总4页 (文件大小:367K)
中文:  中文翻译
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ESH3B, ESH3C & ESH3D  
New Product  
Vishay General Semiconductor  
Surface Mount Ultrafast Plastic Rectifiers  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
trr  
3 A  
100 V, 150 V, 200 V  
25 ns  
VF  
0.90 V  
TJ max.  
175 °C  
DO-214AB (SMC)  
Features  
Mechanical Data  
• Glass passivated chip junction  
• Ideal for automated placement  
• Ultrafast recovery times for high efficiency  
• Low forward voltage, low power loss  
• High forward surge capability  
Case: DO-214AB (SMC)  
Epoxy meets UL 94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Meets MSL level 1 per J-STS-020C  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in high frequency rectification and freewheel-  
ing application in switching mode converter and  
inverter for both cosnumer and automotive.  
Maximum Ratings  
TA = 25 °C, unless otherwise specified  
Parameter  
Symbol  
ESH3B  
EHB  
ESH3C  
EHC  
ESH3D  
EHD  
Unit  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRMM  
VRMS  
VDC  
100  
150  
200  
V
V
V
A
A
70  
105  
150  
3.0  
140  
200  
Maximum DC blocking voltage  
100  
Maximum average forward rectified current (Fig. 1)  
IF(AV)  
IFSM  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
125  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 175  
°C  
Document Number 84648  
17-Oct-05  
www.vishay.com  
1
ESH3B, ESH3C & ESH3D  
Vishay General Semiconductor  
Electrical Characteristics  
TA = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbo Value  
l
Unit  
at IF = 3 A(1)  
Maximum instantaneous forward voltage  
VF  
0.90  
V
Maximum DC reverse current at rated  
DC blocking voltage  
TA = 25 °C  
IR  
5.0  
150  
µA  
TA = 125 °C  
Maximum reverse recovery time  
Typical reverse recovery time  
at IF = 0.5 A, IR = 1 A, Irr = 0.25 A  
trr  
trr  
25  
ns  
ns  
at IF = 3 A, VR = 30 V di/dt = 50 A/µs, Irr = 10 % IRM TJ = 25 °C  
TJ = 100 °C  
40  
55  
Typical stored charge  
at IF = 3 A, VR = 30 V di/dt = 50 A/µs, Irr = 10 % IRM TJ = 25 °C  
TJ = 100 °C  
Qrr  
CJ  
25  
60  
nC  
pF  
Typical junction capacitance  
Note:  
at 4.0 V, 1 MHz  
70  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
Thermal Characteristics  
TA = 25 °C, unless otherwise specified  
Parameter  
Typical thermal resistance(1)  
Symbol  
RθJA  
RθJL  
ESH3B  
ESH3C  
ESH3D  
Unit  
°C/W  
50  
15  
Note:  
(1) Units mounted on P.C.B. with 12.0 x 12.0 mm land areas.  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise specified)  
3.5  
3
125  
100  
75  
2.5  
2
1.5  
50  
1
25  
0.5  
0
0
1
0
25  
50  
75  
100  
125  
150  
175  
10  
Number of Cycles at 60 Hz  
100  
Lead Temperature (°C)  
Figure 1. Maximum Forward Current Derating Curve  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
www.vishay.com  
Document Number 84648  
17-Oct-05  
2
ESH3B, ESH3C & ESH3D  
Vishay General Semiconductor  
1000  
100  
TJ = 175 °C  
10  
1
TJ = 150 °C  
TJ = 125 °C  
100  
10  
1
TJ = 25 °C  
0.10  
0.01  
0.2  
0.4  
0.6  
0.8  
1
1.2  
0.1  
1
10  
100  
Instantaneous Forward Voltage (V)  
Reverse Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
1000  
100  
10  
1
T
J
= 175 °C  
= 150 °C  
J = 125 °C  
T
J
100  
10  
T
1
TJ = 25 °C  
0.1  
0.01  
0
20  
40  
60  
80  
100  
0.01  
0.1  
1
10  
100  
Percent of Rated Peak Reverse Voltage (%)  
t - Pulse Duration (sec.)  
Figure 4. Typical Reverse Leakage Characteristics  
Figure 6. Typical Transient Thermal Impedance  
Package dimensions in inches (millimeters)  
DO-214AB (SMC)  
Mounting Pad Layout  
Cathode Band  
0.185 MAX.  
(4.69 MAX.)  
0.126 (3.20)  
0.114 (2.90)  
0.246 (6.22)  
0.220 (5.59)  
0.126 MIN.  
(3.20 MIN.)  
0.280 (7.11)  
0.060 MIN.  
(1.52 MIN.)  
0.260 (6.60)  
0.012 (0.305)  
0.006 (0.152)  
0.320 REF  
0.103 (2.62)  
0.079 (2.06)  
0.060 (1.52)  
0.030 (0.76)  
0.008 (0.2)  
0 (0)  
0.320 (8.13)  
0.305 (7.75)  
Document Number 84648  
17-Oct-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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